EP0464515A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of manufacturing silicon nitride film
Assignee: Toshiba Corp
•
Filing: 1991-06-21
•
Granted: —
•
Expires: 2011-06-21
Abstract
Abstract According to this invention, there is disclosed a method of manufacturing a silicon nitride film on a semiconductor substrate using a low-pressure CVD apparatus, including the steps of setting a plurality of semiconductor wafers (2) in a boat (14) in a reaction furnace (1), increasing a temperature in the reaction tube (1) to a predetermined temperature and decreasing a pressure in the reaction tube (1) to a predetermined pressure, and supplying Si(N(CH3)2)n, n=1-4, gas from a first gas source (8) to the reaction tube (1) and supplying NH3 or N2 gas from a second gas source (13) to the reaction tube (1). <IMAGE>
Inventors
- 👤 Yuuichi C/O Intell.Property Div. Mikata
- 👤 Takahiko C/O Intell.Property Div. Moriya
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 03:54
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; C23C16/345; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6687; H10P14/6689; H10P14/6336; Y; Y10; Y10S; Y10S148/00; Y10S148/114
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
98 words
A method of manufacturing a silicon nitride film on a semiconductor substrate using a low-pressure CVD apparatus, comprising the steps of: setting a plurality of semiconductor wafers (2) on a boat (14) in a reaction furnace (1); increasing a temperature in said reaction tube (1) to a predetermined temperature and decreasing a pressure in said reaction tube (1) to a predetermined pressure; and supplying a mixture containing silicon, nitrogen, hydrogen and barbon from a first gas source (8) to said reaction tube (1) and supplying NH₃ gas from a second gas source (13) to said reaction tube (1).
Claim 2
Dependent Claim
46 words
The method according to claim 1, characterized in that the temperature and pressure in said reaction tube (1) are 700°C and 0.5 Torr, and flow rates of said a mixture containing silicon, nitrogen, hydrogen and carbon and NH₃ gas are 100 SCCM and 1,000 SCCM, respectively.
Claim 3
Independent Claim
99 words
A method of manufacturing a silicon nitride film on a semiconductor substrate using a low-pressure CVD apparatus, comprising the steps of: setting a plurality of semiconductor wafers (2) in a boat (14) in a reaction tube (1); increasing a temperature in said reaction tube (1) to a predetermined temperature and decreasing a pressure in said reaction tube (1) to a predetermined pressure; and supplying a mixture containing silicon, nitrogen, hydrogen and carbon from a first gas source (8) to said reaction tube (1) and supplying or NH₃ gas from a second gas source (13) to said reaction tube (1).
Claim 4
Independent Claim
98 words
A method of manufacturing a silicon nitride film on a semiconductor substrate using a low-pressure CVD apparatus, comprising the steps of: setting a plurality of semiconductor wafers (2) in a boat (14) in a reaction tube (1); increasing a temperature in said reaction tube (1) to a predetermined temperature and decreasing a pressure in said reaction tube (1) to a predetermined pressure; and supplying a mixture containing silicon, nitrogen, hydrogen and carbon from a first gas source (8) to said reaction tube (1) and supplying NH₃ gas from a second gas source (13) to said reaction tube (1).
Claim 5
Independent Claim
98 words
A method of manufacturing a silicon nitride film on a semiconductor substrate using a low-pressure CVD apparatus, comprising the steps of: setting a plurality of semiconductor wafers (2) in a boat (14) in a reaction tube (1); increasing a temperature in said reaction tube (1) to a predetermined temperature and decreasing a pressure in said reaction tube (1) to a predetermined pressure; and supplying a mixture containing silicon, nitrogen, hydrogen and carbon from a first gas source (8) to said reaction tube (1) and supplying NH₃ gas from a second gas source (13) to said reaction tube (1).
Claim 6
Independent Claim
98 words
A method of manufacturing a silicon nitride film on a semiconductor substrate using a low-pressure CVD apparatus, comprising the steps of: setting a plurality of semiconductor wafers (2) in a boat (14) of a reaction tube (1); increasing a temperature in said reaction tube (1) to a predetermined temperature and decreasing a pressure in said reaction tube (1) to a predetermined pressure; and supplying a mixture containing silicon, nitrogen, hydrogen and carbon from a first gas source (8) to said reaction tube (1) and supplying N₂ gas from a second gas source (13) to said reaction tube (1).
Claim 7
Independent Claim
98 words
A method of manufacturing a silicon nitride film on a semiconductor substrate using a low-pressure CVD apparatus, comprising the steps of: setting a plurality of semiconductor wafers (2) in a boat (14) in a reaction tube (1); increasing a temperature in said reaction tube (1) to a predetermined temperature and decreasing a pressure in said reaction tube (1) to a predetermined pressure; and supplying a mixture containing silicon, nitrogen, hydrogen and carbon from a first gas source (8) to said reaction tube (1) and supplying N₂ gas from a second gas source (13) to said reaction tube (1).
Claim 8
Independent Claim
98 words
A method of manufacturing a silicon nitride film on a semiconductor substrate using a low-pressure CVD apparatus, comprising the steps of: setting a plurality of semiconductor wafers (2) in a boat (14) in a reaction tube (1); increasing a temperature in said reaction tube (1) to a predetermined temperature and decreasing a pressure in said reaction tube (1) to a predetermined pressure; and supplying a mixture containing silicon, nitrogen, hydrogen and carbon from a first gas source (8) to said reaction tube (1) and supplying N₂ gas from a second gas source (13) to said reaction tube (1).
Claim 9
Independent Claim
126 words
A method of manufacturing a silicon nitride film on a semiconductor substrate using a low-pressure CVD apparatus, comprising the steps of: setting a plurality of semiconductor wafers (2) in a boat (14) of a reaction tube (1); increasing a temperature in said reaction tube (1) to a predetermined temperature and decreasing a pressure in said reaction tube (1) to a predetermined pressure; supplying one number selected from the group consisting of Si(N(CH₃)₂)4, SiH(N(CH₃)₂)3, SiH₂(N(CH₃)₂)2, and SiH₃(N(CH₃)₂) gases from a first gas source (8) to said reaction tube (1) and supplying one number selected from the group consisting of N₂ and NH₃ gases from a second gas source (13) to said reaction tube (1); and producing a plasma from said gas supplied in said reaction tube (1).
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.