US5831321A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device in which an anti-reflective layer is formed by varying the composition thereof
Assignee: Sony Corp
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Filing: 1996-09-11
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Granted: 1998-11-03
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Expires: 2016-09-11
Abstract
Abstract A semiconductor device in which dry etching properties are rendered compatible with satisfactory anti-reflection characteristics in far-infrared lithography the semiconductor device has a semiconductor substrate and an electrode and wire pattern on the substrate. The semiconductor device also has an anti-reflective layer on the substrate which presents a variation in the composition of a constituent element along the film thickness over the semiconductor substrate. The anti-reflective layer is selected from the group consisting of SiO x , SiN x and Si x O y N z .
Inventors
- 👤 Tetsuji Nagayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:38
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091; H; H10; H10P; H10P95/00; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043; Y; Y10; Y10S; Y10S430/00; Y10S430/151; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/952
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
69 words
A semiconductor device comprising: a semiconductor substrate; and an anti-reflective layer on said substrate said anti-reflective layer being a single layer of a material having a composition with one of its constituent elements varied in quantity along the thickness of the layer over the semiconductor substrate, the anti-reflective layer being selected from the group consisting of SiO x , SiN x and Si x O y N z .
Claim 2
Dependent Claim
69 words
A semiconductor device comprising: a semiconductor substrate; and an anti-reflective layer on said substrate said anti-reflective layer being a single layer of a material having a composition with one of its constituent elements varied in quantity along the thickness of the layer over the semiconductor substrate, the anti-reflective layer being selected from the group consisting of SiO x , SiN x and Si x O y N z .
Claim 3
Dependent Claim
35 words
The semiconductor device as claimed in claim 1, wherein the anti-reflective layer has a composition selected such that an upper layer portion thereof has a refractive index higher than that of a lower layer portion.
Claim 4
Dependent Claim
29 words
The semiconductor device as claimed in claim 2, wherein the anti-reflective layer is a film formed of a silicon compound and having a composition with a variable silicon ratio.
Claim 5
Dependent Claim
18 words
The semiconductor device as claimed in claim 2, wherein the anti-reflective layer has a silicon-rich upper layer portion.
Claim 6
Dependent Claim
40 words
The semiconductor device as claimed in claim 2, wherein the anti-reflective layer is a film formed of a silicon compound and having a silicon ratio in the composition thereof increased from its lower layer portion towards its upper layer portion.
Claim 7
Dependent Claim
59 words
The semiconductor device as claimed in claim 2, further comprising a photoresist film formed over the anti-reflective layer, wherein the anti-reflective layer is film having a lower refractive index area and a high refractive index area formed on the low refractive index area, said higher refractive index area having a refractive index higher than that of the photoresist film.
Claim 8
Dependent Claim
25 words
The semiconductor device as claimed in claim 1, wherein the anti-reflective layer is a film formed of a silicon compound having a variable silicon ratio.
Claim 9
Dependent Claim
18 words
The semiconductor device as claimed in claim 1, wherein the anti-reflective layer has a silicon-rich upper layer portion.
Claim 10
Dependent Claim
38 words
The semiconductor device as claimed in claim 1, wherein the anti-reflective layer is film formed of a silicon compound having a silicon ratio which increases proceeding from a lower layer portion thereof toward an upper layer portion thereof.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-11-02 | 2002-05-04 | 2002-11-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-11-02 | 2006-05-04 | 2006-11-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-11-02 | 2010-05-04 | 2010-11-03 | $7700.00 | Window Closed / Lapsed |