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JPS6371801A Expired / Lapsed JP ⏱️ 0.0 years remaining

Antireflection film

Assignee: Hitachi Ltd
•
Filing: 1986-09-16
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Granted: —
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Expires: 2006-09-16
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Abstract

Abstract PURPOSE:To obtain an antireflection film having a high antireflection effect by mixing plural kinds of materials and forming the antireflection film in such a manner that the refractive index of the antireflection film decrease continuously from a substrate side. CONSTITUTION:Si dioxide and Mg fluoride are simultaneously deposited by evaporation on the glass substrate 1 to form a continuously changing refractive index film 2. The vapor deposition is executed by depositing the Si dioxide by evaporation first, then increasing the ratio of the Mg fluoride successively to change the ratio of the vapor deposition amt. between the Si dioxide and the Mg fluoride continuously and finally executing the vapor deposition of only the Mg fluoride. Then, the reflection of light arises at the boundary of the materials having the different refractive indices, but the generation of the reflection is obviated by changing the refractive index continuously. Since the antireflection film having the high antireflection effect is formed at a low cost with good through-put, a high-grade cathode ray tube, etc., are producible at a low cost.

Inventors

  • 👤 Akio Saito
  • 👤 昭男 斉藤
  • 👤 Mitsuo Nakatani
  • 👤 中谷 光雄
  • 👤 Hiromitsu Kawamura
  • 👤 河村 啓溢

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-05 10:28
CPC Classifications
Y; Y02; Y02E; Y02E10/00; Y02E10/50

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