US5591494A
Expired / Lapsed
US
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Deposition of silicon nitrides by plasma-enhanced chemical vapor deposition
Assignee: Applied Materials Inc
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Filing: 1996-02-12
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Granted: 1997-01-07
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Expires: 2016-02-12
Abstract
Abstract A silicon nitride or silicon oxynitride film is deposited by plasma enhanced chemical vapor deposition from a precursor gas mixture of a silane, a nitrogen-containing organosilane and a nitrogen-containing gas at low temperatures of 300°-400° C. and pressure of 1-10 Torr. The silicon nitride films have low carbon content and low hydrogen content, low wet etch rates and they form conformal films over stepped topography.
Inventors
- 👤 Tatsuya Sato
- 👤 Atsushi Tabata
- 👤 Naoaki Kobayashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:21
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/345; C23C16/44; C23C16/50; C23C16/505; C23C16/509; H10P14/66; H10P14/668; H10P14/6681; H10P14/6687; H10P14/6689; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/6682
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
57 words
A process for depositing a silicon nitride film by plasma enhanced chemical vapor deposition comprising supplying a precursor gas mixture comprising an inorganic silane, a nitrogen-containing organosilane and a nitrogen-containing gas to a vacuum chamber, generating a plasma in the chamber from said precursor gases, and depositing a silicon nitride compound on a substrate in said chamber.
Claim 2
Dependent Claim
57 words
A process for depositing a silicon nitride film by plasma enhanced chemical vapor deposition comprising supplying a precursor gas mixture comprising an inorganic silane, a nitrogen-containing organosilane and a nitrogen-containing gas to a vacuum chamber, generating a plasma in the chamber from said precursor gases, and depositing a silicon nitride compound on a substrate in said chamber.
Claim 3
Dependent Claim
34 words
A process according to claim 1 wherein said inorganic silane has the formula Si.sub.n X.sub.2n+2 wherein X is selected from the group consisting of hydrogen and chlorine and n is an integer from 1-3.
Claim 4
Dependent Claim
13 words
A process according to claim 2 wherein said inorganic silane is silicon tetrahydride.
Claim 5
Dependent Claim
35 words
A process according to claim 1 wherein said nitrogen-containing organosilane has the formula (R).sub.3 --Si--NH--Si--(R).sub.3 wherein R at each occurrence independently is alkyl or hydrogen with the proviso that at least one R is alkyl.
Claim 6
Dependent Claim
12 words
A process according to claim 4 wherein said nitrogen-containing organosilane is hexamethyldisilazane.
Claim 7
Dependent Claim
35 words
A process according to claim 1 wherein said nitrogen-containing organosilane has the formula (R).sub.3 --SiN--(R).sub.2 wherein R at each occurrence independently is alkyl or hydrogen with the proviso that at least one R is alkyl.
Claim 8
Dependent Claim
26 words
A process according to claim 1 wherein the gas flow rate ratio or organosilane and combined molar concentration of organosilane and inorganic silane is about 5-50%.
Claim 9
Dependent Claim
17 words
A process according to claim 1 wherein said nitrogen-containing gas is a mixture of nitrogen and ammonia.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-01-07 | 2000-07-08 | 2001-01-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-01-07 | 2004-07-08 | 2005-01-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-01-07 | 2008-07-08 | 2009-01-07 | $7700.00 | Window Closed / Lapsed |