Low pressure chemical vapor deposition of silicon nitride films

Claim 2

In a process for forming on a semiconductor wafer a high quality layer of silicon nitride adapted to be patterned and to serve as a mask for diffusion or implantation of selected impurities into selected regions of said wafer, the steps of: disposing said wafer in a closed reaction chamber evacuated to a pressure less than about 1 Torr and heated to an elevated temperature in the range of about 650 to 900 degrees Centigrade; supplying to the interior of said chamber a gaseous mixture comprising primarily ammonia and a silicon compound adapted to react together with said ammonia at said elevated temperature gradually to deposit said layer of silicon nitride on said wafer at a deposition rate greater than approximately 50 Angstroms per minute, said silicon compound having a flow rate of greater than approximately 12 cubic centimeters per minute, said ammonia and said selected silicon compound having a ratio of relative concentrations in said mixture preselected to be in the range of 4:1 and 20:1.

Claim 3

The process of claim 1, wherein said silicon compound is selected from the group consisting of silane, dichlorosilane, and tetrachlorosilane.

Claim 6

The process of claim 3, wherein said silicon compound is selected from the group consisting of silane, dichlorosilane, and tetrachlorosilane.

Claim 7

In a process for forming a diffusion or implant masking pattern on a semiconductor wafer, the steps of: forming a layer of silicon oxide on the surface of said wafer; depositing a layer of silicon nitride on said layer of said silicon oxide; and forming a pattern of apertures in said layer of silicon nitride to serve as said diffusion or implant mask pattern; said step of depositing said nitride layer comprising: disposing said wafer in a closed reaction chamber evacuated to a pressure less than about 1 Torr and heated to an elevated temperature in the range of about 650 to 950 degrees Centigrade; supplying to the interior of said chamber a gaseous mixture comprising primarily ammonia and a silicon compound adapted to react together with said ammonia at said elevated temperature gradually to deposit said layer of silicon nitride on said wafer at a deposition rate of approximately 100 Angstroms per minute, said silicon compound having a flow rate of approximately 50 cubic centimeters per minute, said ammonia and said silicon compound having a ratio of relative concentrations in said mixture preselected to be in the range of 6:1 and 8:1.

Claim 8

In a process for forming a diffusion or implant masking pattern on a semiconductor wafer, the steps of: forming a layer of silicon oxide on the surface of said wafer; depositing a layer of silicon nitride on said layer of said silicon oxide; and forming a pattern of apertures in said layer of silicon nitride to serve as said diffusion or implant mask pattern; said step of depositing said nitride layer comprising: disposing said wafer in a closed reaction chamber evacuated to a pressure less than about 1 Torr and heated to an elevated temperature in the range of about 650 to 950 degrees Centigrade; supplying to the interior of said chamber a gaseous mixture comprising primarily ammonia and a silicon compound adapted to react together with said ammonia at said elevated temperature gradually to deposit said layer of silicon nitride on said wafer at a deposition rate of approximately 100 Angstroms per minute, said silicon compound having a flow rate of approximately 50 cubic centimeters per minute, said ammonia and said silicon compound having a ratio of relative concentrations in said mixture preselected to be in the range of 6:1 and 8:1.

Claim 9

The process of claim 5, wherein said silicon compound is selected from the group consisting of silane, dichlorosilane, and tetrachlorosilane.

Claim 10

The process of claim 5, wherein said silicon compound is dichlorosilane and said ratio of relative concentrations of ammonia and dichlorosilane is preselected to be in the range of 6:1 to 8:1.

Claim 11

In a self-aligned bipolar process for forming separated and differently doped first and second regions in a semiconductor wafer, the steps of: forming a layer of silicon oxide on the surface of said wafer; depositing a layer of silicon nitride on said layer of silicon oxide to a thickness in the range of about 900 to 2000 Angstroms; forming by way of a first photomask pattern and etching operation a pattern of separated aperture in said layer of silicon nitride to serve as a mask pattern for all of said differently doped regions; growing a thick layer of silicon oxide on said wafer in all of said apertures in said layer of silicon nitride; forming by way of a second photomask pattern and selected oxide etching operation a first subpattern of said separated apertures in said layer of silicon nitride to serve as a mask aperture pattern for said first regions in said wafer; doping said first regions through said first subpattern of apertures in said silicon nitride layer; regrowing a thick layer of silicon oxide on said wafer in said first subpattern of apertures; forming by way of a third photomask pattern and selective oxide etching operation a second subpattern of said separated apertures in said layer of silicon nitride to serve as a mask aperture pattern for said second regions in said wafer; and doping said second regions through said second subpattern of apertures; said step of depositing said layer of silicon nitride comprising: disposing said wafer in a closed reaction chamber evacuated to a low pressure and heated to an elevated temperature in the range of about 650 to 900 degrees Centigrade; supplying to the interior of said tube a gaseous mixture of ammonia and a silicon compound adapted to react together with said ammonia at said elevated temperature to deposit said layer of silicon nitride on said wafer, said ammonia and said selected silicon compound having a ratio of relative concentrations in said mixture preselected to be in the range of about 4:1 and 20:1.

Claim 12

In a self-aligned bipolar process for forming separated and differently doped first and second regions in a semiconductor wafer, the steps of: forming a layer of silicon oxide on the surface of said wafer; depositing a layer of silicon nitride on said layer of silicon oxide to a thickness in the range of about 900 to 2000 Angstroms; forming by way of a first photomask pattern and etching operation a pattern of separated aperture in said layer of silicon nitride to serve as a mask pattern for all of said differently doped regions; growing a thick layer of silicon oxide on said wafer in all of said apertures in said layer of silicon nitride; forming by way of a second photomask pattern and selected oxide etching operation a first subpattern of said separated apertures in said layer of silicon nitride to serve as a mask aperture pattern for said first regions in said wafer; doping said first regions through said first subpattern of apertures in said silicon nitride layer; regrowing a thick layer of silicon oxide on said wafer in said first subpattern of apertures; forming by way of a third photomask pattern and selective oxide etching operation a second subpattern of said separated apertures in said layer of silicon nitride to serve as a mask aperture pattern for said second regions in said wafer; and doping said second regions through said second subpattern of apertures; said step of depositing said layer of silicon nitride comprising: disposing said wafer in a closed reaction chamber evacuated to a low pressure and heated to an elevated temperature in the range of about 650 to 900 degrees Centigrade; supplying to the interior of said tube a gaseous mixture of ammonia and a silicon compound adapted to react together with said ammonia at said elevated temperature to deposit said layer of silicon nitride on said wafer, said ammonia and said selected silicon compound having a ratio of relative concentrations in said mixture preselected to be in the range of about 4:1 and 20:1.

Claim 13

The process of claim 8, wherein said silicon compound is selected from the group consisting of silane, dichlorosilane, and tetrachlorosilane.

Claim 14

The process of claim 8, wherein said silicon compound is dichlorosilane and said ratio of relative concentrations of ammonia and dichlorosilane is preselected to be in the range of about 6:1 to 8:1.