EP0334791A1
Expired / Lapsed
EP
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Process for the preparation of silicon nitride
Assignee: Ercros SA
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Filing: 1989-03-22
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Granted: —
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Expires: 2009-03-22
Abstract
Abstract A process for the preparation of silicon nitride in the form of powder or a coating on components by the plasma assisted vapour phase chemical deposition technique (PECVD) at some 900-1100°C starting from gases containing nitrogen and silicon such as N₂, NH₃, SiH₄, SiF₄, SiH₂Cl₂, etc., and in the some cases H₂. A product of suitable density which is free from impurities and can be used in electronic and structural applications is obtained at moderate temperatures in accordance with this process.
Inventors
- 👤 Cristina Gomez-Aleixandre Fernandez
- 👤 Domingo Diaz Garrido
- 👤 Federico Serrano Martinez
- 👤 Jose Maria Albella Martin
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 03:29
CPC Classifications
C; C01; C01B; C01B21/00; C01B21/06; C01B21/068; H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; C04; C04B; C04B41/00; C04B41/45; C04B41/50; C04B41/5053; C04B41/5062; C04B41/5066; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/345; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
134 words
A process for the preparation of silicon nitride in the form of powder or a film deposited on a substrate characterised in that it includes the following steps: a) The reaction of at least one gas containing silicon and at least one gas containing nitrogen with or without molecular hydrogen at a temperature of between 900 and 1100°C and a pressure of up to 10 torr, the reaction between the said molecules being activated by plasma induction from a radio frequency discharge, b) Deposition of the silicon nitride formed in the form of powder in the reaction chamber or in the form of a film on a substrate such as silicon, graphite, gallium arsenide or others, placed in the reaction chamber, c) Removal of the gases produced by the reaction from the reaction chamber.
Claim 2
Dependent Claim
134 words
A process for the preparation of silicon nitride in the form of powder or a film deposited on a substrate characterised in that it includes the following steps: a) The reaction of at least one gas containing silicon and at least one gas containing nitrogen with or without molecular hydrogen at a temperature of between 900 and 1100°C and a pressure of up to 10 torr, the reaction between the said molecules being activated by plasma induction from a radio frequency discharge, b) Deposition of the silicon nitride formed in the form of powder in the reaction chamber or in the form of a film on a substrate such as silicon, graphite, gallium arsenide or others, placed in the reaction chamber, c) Removal of the gases produced by the reaction from the reaction chamber.
Claim 3
Dependent Claim
32 words
A process according to claim 1, characterised in that silicon halides and silanes such as silicon tetrafluoride, silicon difluoride, silicon tetrachloride, dichlorosilane and silane may be used as the gases containing silicon.
Claim 4
Dependent Claim
21 words
A process according to claim 1, characterised in that molecular nitrogen and ammonia may be used as the gases containing nitrogen.
Claim 5
Dependent Claim
23 words
A process according to claims 1 and 3, characterised in that the starting gases for the reaction are silane, ammonia, nitrogen and hydrogen.
Claim 6
Dependent Claim
24 words
A process according to claims 1 and 3, characterised in that the starting gases for the reaction are silicon tetrafluoride, ammonia, nitrogen and hydrogen.
References Cited (Backward Citations)
US4089992A
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DE1621234A1
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GB1199811A
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EP0015694A2
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US4704300A
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GB2170143A
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FR2591412A1
Cited
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