EP0015694A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method for forming an insulating film on a semiconductor substrate surface
Assignee: Fujitsu Ltd
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Filing: 1980-02-22
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Granted: —
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Expires: 2000-02-22
Abstract
Abstract In a method for forming an insulating film on a semiconductor substrate surface, the silicon nitride of the insulating film has been formed by a plasma CVD or a direct nitridation. in the present invention, a gas plasma of a nitrogen-containing gas is generated in a direct nitridation reaction chamber, and the semiconductor silicon body is heated to a temperature of from approximately 800 to approximately 1300°C within the gas plasma atmosphere, thereby forming the silicon nitride film. The resulting silicon nitride film has a dense structure and a low oxygen concentration and a thick silicon nitride film is formed in a short period of direct nitridation of silicon.
Inventors
- 👤 Takao Nozaki
- 👤 Takashi Ito
- 👤 Hideki Arakawa
- 👤 Masaichi Shinoda
- 👤 Hajime Ishikawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 15:33
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6516; H10P14/6518; H10P14/6519; H10P14/6522; H10P14/6524; H10P14/6529; H10P14/63; H10P14/6302; H10P14/6316; H10P14/6319; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927; H10P14/694; H10P14/6943; H10P14/69433
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
116 words
A method for forming an insulating film on a semiconductor body surface, wherein an insulating film of silicon nitride is formed by direct nitridation of at least one semiconductor silicon body positioned in a direct nitridation reaction chamber, characterized in that a gas plasma of a nitrogen-containing gas, such as ammonia, hydrazine, nitrogen, a mixture of nitrogen with hydrogen or hydrogen chloride, or a mixture of one or more of these gases with an inert gas, but preferably ammonia above, is generated in said direct nitridation reaction chamber, and said semiconductor silicon body is heated to a temperature of from approximately 800 to approximately 1300°C within said gas plasma atmosphere, thereby forming said silicon nitride film.
Claim 2
Independent Claim
116 words
A method for forming an insulating film on a semiconductor body surface, wherein an insulating film of silicon nitride is formed by direct nitridation of at least one semiconductor silicon body positioned in a direct nitridation reaction chamber, characterized in that a gas plasma of a nitrogen-containing gas, such as ammonia, hydrazine, nitrogen, a mixture of nitrogen with hydrogen or hydrogen chloride, or a mixture of one or more of these gases with an inert gas, but preferably ammonia above, is generated in said direct nitridation reaction chamber, and said semiconductor silicon body is heated to a temperature of from approximately 800 to approximately 1300°C within said gas plasma atmosphere, thereby forming said silicon nitride film.
Claim 3
Dependent Claim
20 words
A method according to claim 1, characterized in that said ammonia has a purity of not.less than 99.99 volume %.
Claim 4
Dependent Claim
37 words
A method according to claim 1 or 2, characterized in that said semiconductor body is supported in said reaction chamber by a supporting means made of carbon, silicon carbide, silicon, quartz or carbon coated with silicon carbide.
Claim 5
Independent Claim
34 words
A method according to one of claims 1 through 3, characterized in that the tube of said reaction chamber is made of quartz, silicon carbide or silicon, or more preferably silicon carbide or silicon.
Claim 6
Dependent Claim
30 words
A method according to claim 1, characterized in that said silicon nitride film formed by direct nitridation is then subjected to a heat treatment in an ammonia non plasma atmosphere.
Claim 7
Dependent Claim
51 words
A method according to claim 1 or 5, characterized in that, prior to heating said semiconductor silicon substrate within said gas plasma atmosphere, a region or regions of said semiconductor silicon substrate are provided with a substantially amorphous structure, and said silicon nitride film is formed on said region or regions.
Claim 8
Dependent Claim
18 words
A method according to claim 6, characterized in that a DC voltage is applied to said gas plasma.
Claim 9
Independent Claim
39 words
A method according to one of claims 1 through 7, characterized in that said silicon nitride film having a 0 thickness of not less than 50 A is formed in a nitridation time of at least approximately 30 minutes.
Claim 10
Independent Claim
31 words
A method according to one of claims 1 through 8, characterized in that the surface of the silicon nitride film is oxidized by a heat treatment in an oxygen containing atmosphere.
References Cited (Backward Citations)
No citation records indexed.
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