Chemically enhanced thermal oxidation and nitridation of silicon and products thereof

Claim 2

In a process for growing an oxide or nitride surface layer on a silicon substrate by heating said substrate to a temperature adapted to provide optimal growth rates, thicknesses, and electronic qualities of the oxide or nitride film, and exposing said substrate to a reactive gas consisting essentially of oxygen or nitrogen for a period sufficient to form a layer of desired thickness by reaction between said substrate and said gas, the improvement comprising including in said reactive gas less than 0.2 mol % (measured as F) of a fluorine-containing reactant.

Claim 3

The process of claim 1 wherein said fluorine-containing reactant is a chloro-fluoro-hydrocarbon.

Claim 4

The process of claim 2 wherein said chloro-fluoro-hydrocarbon is selected from the group of: chlorofluoroethane, dichlorofluoroethane, dichlorodifluoroethane, trichlorofluoroethane, chlorotrifluoroethane, chlorodifluoroethane, Freon 14, Freon 22, Freon 116, Freon 114, and the fluoro of Freon 23.

Claim 5

The process of claim 1 wherein said fluorine-containing reactant is a fluorine-bearing hydrocarbon or freon not containing chlorine.

Claim 6

The process of claim 1 wherein said fluorine-containing reactant contains no chlorine or hydrogen.

Claim 7

The process of claim 5 wherein said fluorine-containing reactant is NF 3 .

Claim 8

The process of claim 5 wherein said oxidizing atmosphere is formed by evaporating said fluorine source into dry gaseous oxygen and mixing the resultant gas with additional dry oxygen gas to achieve a predetermined fluorine concentration.

Claim 9

An oxidized silicon surface material produced in accordance with the process of claim 5.

Claim 10

An oxidized or nitridized silicon surface material produced in accordance with the process of claim 4.

Claim 11

A process for growing an oxide layer on a silicon surface comprising the steps of: a. heating unoxidized silicon to a temperature adapted to provide optimal growth rates, thicknesses, and electronic qualities of the oxide film under an inert atmosphere; b. substituting an oxidizing atmosphere for said inert atmosphere, said oxidizing atmosphere comprising principally oxygen but also comprising up to 0.2 mol % fluorine (measured as F) from a fluorine source comprising NF 3 , fluorine-bearing freons, chlorofluoroethane, dichlorofluoroethane, dichlorodifluoroethane, trichlorofluoroethane, chlorotrifluoroethane, chlorodifluoroethane, Freon 14, Freon 22, Freon 116, Freon 114, and the fluoro form of Freon 23; and c. allowing said oxidizing atmosphere to oxidize said silicon for a predetermined period of time.

Claim 12

A process for growing an oxide layer on a silicon surface comprising the steps of: a. heating unoxidized silicon to a temperature adapted to provide optimal growth rates, thicknesses, and electronic qualities of the oxide film under an inert atmosphere; b. substituting an oxidizing atmosphere for said inert atmosphere, said oxidizing atmosphere comprising principally oxygen but also comprising up to 0.2 mol % fluorine (measured as F) from a fluorine source comprising NF 3 , fluorine-bearing freons, chlorofluoroethane, dichlorofluoroethane, dichlorodifluoroethane, trichlorofluoroethane, chlorotrifluoroethane, chlorodifluoroethane, Freon 14, Freon 22, Freon 116, Freon 114, and the fluoro form of Freon 23; and c. allowing said oxidizing atmosphere to oxidize said silicon for a predetermined period of time.

Claim 13

In a process for growing an oxide or nitride surface layer on a silicon substrate by heating said substrate to a temperature adapted to provide optimal growth rates, thicknesses, and electronic qualities of the oxide or nitride film, and exposing said substrate to a reactive gas consisting essentially of oxygen or nitrogen for a period sufficient to form a layer of desired thickness by reaction between said substrate and said gas, the improvement comprising including in said reactive gas between 0.055 and 0.20 mol % fluorine (measured as F) of a fluorine-containing reactant.

Claim 14

In a process for growing an oxide or nitride surface layer on a silicon substrate by heating said substrate to a temperature adapted to provide optimal growth rates, thicknesses, and electronic qualities of the oxide or nitride film, and exposing said substrate to a reactive gas consisting essentially of oxygen or nitrogen for a period sufficient to form a layer of desired thickness by reaction between said substrate and said gas, the improvement comprising including in said reactive gas between 0.055 and 0.20 mol % fluorine (measured as F) of a fluorine-containing reactant.

Claim 15

The process of claim 11 wherein said fluorine-containing reactant is a chloro-fluoro-hydrocarbon.

Claim 16

The process of claim 12 wherein said chloro-fluoro-hydrocarbon is selected from the group of: chlorofluoroethane, dichlorofluoroethane, dichlorodifluoroethane, trichlorofluoroethane, chlorotrifluoroethane, chlorodifluorethane, Freon 14, Freon 22, Freon 116, Freon 114, and the fluoro form of Freon 23.

Claim 17

The process of claim 11 wherein said fluorine-containing reactant is a fluorine-bearing hydrocarbon or freon not containing chlorine.

Claim 18

The process of claim 11 wherein said fluorine-containing reactant contains no chlorine or hydrogen.

Claim 19

The process of claim 15 wherein said fluorine-containing reactant is NF 3 .

Claim 20

The process of claim 15 wherein said oxidizing atmosphere is formed by evaporating said fluorine source into dried gaseous oxygen and mixing the resultant gas with additional dry oxygen gas to achieve a predetermined fluorine concentration.

Claim 21

An oxidized silicon surface material produced in accordance with the process of claim 15.

Claim 22

An oxidized or nitridized silicon surface material produced in accordance with the process of claim 14.

Claim 23

A process for growing an oxide layer on a silicon surface comprising the steps of: a. heating unoxidized silicon to a temperature adapted to provide optimal growth rates, thicknesses, and electronic qualities of the oxide film under an inert atmosphere; b. substituting an oxidizing atmosphere for said inert atmosphere, said oxidizing atmosphere comprising principally oxygen but also comprising between 0.055 and 0.2 mol % fluorine (measured as F) from a fluorine source comprising NF 3 , fluorine-bearing freons, chlorofluoroethane, dichlorofluoroethane, dichlorodifluoroethane, trichlorofluoroethane, chlorotrifluoroethane, chlorodifluoroethane, Freon 14, Freon 22, Freon 116, Freon 114, and the fluoro from of Freon 23; and c. allowing said oxidizing atmosphere to oxidize said silicon for a predetermined period of time.

Claim 24

A process for growing an oxide layer on a silicon surface comprising the steps of: a. heating unoxidized silicon to a temperature adapted to provide optimal growth rates, thicknesses, and electronic qualities of the oxide film under an inert atmosphere; b. substituting an oxidizing atmosphere for said inert atmosphere, said oxidizing atmosphere comprising principally oxygen but also comprising between 0.055 and 0.2 mol % fluorine (measured as F) from a fluorine source comprising NF 3 , fluorine-bearing freons, chlorofluoroethane, dichlorofluoroethane, dichlorodifluoroethane, trichlorofluoroethane, chlorotrifluoroethane, chlorodifluoroethane, Freon 14, Freon 22, Freon 116, Freon 114, and the fluoro from of Freon 23; and c. allowing said oxidizing atmosphere to oxidize said silicon for a predetermined period of time.

Claim 25

In a process for growing an oxide or nitride surface layer on a silicon substrate by heating said substrate to a temperature adapted to provide optimal growth rates, thicknesses, and electronic qualities of the oxide or nitride film, and exposing said substrate to a reactive gas consisting essentially of oxygen or nitrogen for a period sufficient to form a layer of desired thickness by reaction between said substrate and said gas, the improvement comprising including in said reactive gas between 0.055 and 0.11 mol % fluorine (measured as F) of a fluorine-containing reactant.

Claim 26

In a process for growing an oxide or nitride surface layer on a silicon substrate by heating said substrate to a temperature adapted to provide optimal growth rates, thicknesses, and electronic qualities of the oxide or nitride film, and exposing said substrate to a reactive gas consisting essentially of oxygen or nitrogen for a period sufficient to form a layer of desired thickness by reaction between said substrate and said gas, the improvement comprising including in said reactive gas between 0.055 and 0.11 mol % fluorine (measured as F) of a fluorine-containing reactant.

Claim 27

The process of claim 21 wherein said fluorine-containing reactant is a chloro-fluoro-hydrocarbon.

Claim 28

The process of claim 22 wherein said chloro-fluoro-hydrocarbon is selected from the group of: chlorofluoroethane, dichlorofluoroethane, dichlorodifluoroethane, trichlorofluoroethane, chlorotrifluoroethane, chlorodifluorethane, Freon 14, Freon 22, Freon 116, Freon 114, and the fluoro form of Freon 23.

Claim 29

The process of claim 21 wherein said fluorine-containing reactant is a fluorine-bearing hydrocarbon or freon not containing chlorine.

Claim 30

The process of claim 21 wherein said fluorine-containing reactant contains no chlorine or hydrogen.

Claim 31

The process of claim 25 wherein said fluorine-containing reactant is NF 3 .

Claim 32

A process for growing an oxide layer on a silicon surface comprising the steps of: a. heating unoxidized silicon to a temperature adapted to provide optimal growth rates, thicknesses, and electronic qualities of the oxide film under an inert atmosphere; b. substituting an oxidizing atmosphere for said inert atmosphere, said oxidizing atmosphere comprising principally oxygen but also comprising between 0.055 and 0.11 mol % fluorine (measured as F) from a fluorine source comprising NF 3 , fluorine-bearing freons, chlorofluoroethane, trichlorofluoroethane, chlorotrifluoroethane, chlorodifluoroethane, Freon 14, Freon 22, Freon 116, Freon 114, and the fluoro form of Freon 23; and c. allowing said oxidizing atmosphere to oxidize said silicon for a predetermined period of time.

Claim 33

A process for growing an oxide layer on a silicon surface comprising the steps of: a. heating unoxidized silicon to a temperature adapted to provide optimal growth rates, thicknesses, and electronic qualities of the oxide film under an inert atmosphere; b. substituting an oxidizing atmosphere for said inert atmosphere, said oxidizing atmosphere comprising principally oxygen but also comprising between 0.055 and 0.11 mol % fluorine (measured as F) from a fluorine source comprising NF 3 , fluorine-bearing freons, chlorofluoroethane, trichlorofluoroethane, chlorotrifluoroethane, chlorodifluoroethane, Freon 14, Freon 22, Freon 116, Freon 114, and the fluoro form of Freon 23; and c. allowing said oxidizing atmosphere to oxidize said silicon for a predetermined period of time.

Claim 34

The process of claim 25 wherein said oxidizing atmosphere is formed by evaporating said fluorine source into dried gaseous oxygen and mixing the resultant gas with additional dry oxygen gas to achieve a predetermined fluorine concentration.

Claim 35

An oxidized silicon surface material produced in accordance with the process of claim 25.

Claim 36

An oxidized or nitridized silicon surface material produced in accordance with the process of claim 24.