US3692571A
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US
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Method of reducing the mobile ion contamination in thermally grown silicon dioxide
Assignee: Nortel Networks Ltd
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Filing: 1970-11-12
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Granted: 1972-09-19
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Expires: 1990-11-12
Abstract
Abstract A TYPICAL PROCESS FOR THERMALLY OXIDIZING A SILICON SEMICONDUCTOR MATERIAL IS DISCLOSED WITH AN IMPROVEMENT CONSISTEING OF THE ADDITION OF A HALOGEN SUBSTANCE, SUCH AS HCL, TO THE OXIDIZING ATMOSPHERE. THIS ADDITIONAL STEP IN THE OXIDATION PROCESS HAS THE EFFECT OF OBVIATING UNSTABLE ELECTRICAL CHARACTERISTICS, CAUSED BY MOBILE ION CONTAMINATION IN THERMALLY GROWN SILICON DIOXIDE. THIS PROCESS IS PARTICULARLY APPLICABLE IN THE MANUFACTURE OF DISCRETE AND INTEGRATED MOSFET DEVICES.
Inventors
- 👤 Douglas Roy Colton
- 👤 Yiu Chung Cheng
- 👤 Rudolph John Kriegler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 02:39
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6322; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/118
Claims Analysis
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-09-19 | 1976-03-20 | 1976-09-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-09-19 | 1980-03-20 | 1980-09-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-09-19 | 1984-03-20 | 1984-09-19 | $7700.00 | Window Closed / Lapsed |