US5405489A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating an interlayer-dielectric film of a semiconductor device by using a plasma treatment prior to reflow
Assignee: Samsung Electronics Co Ltd
•
Filing: 1992-10-30
•
Granted: 1995-04-11
•
Expires: 2012-10-30
Abstract
Abstract The surface of a borophosphosilicate glass (BPSG) dielectric film is changed through a surface treatment, such as by plasma etching with N 2 O, O 3 or O 2 . Erosion caused by H 2 SO 4 boiling or by humidity absorption from the atmosphere is thereby reduced so that reflow processing at temperatures below 850° C. is possible and an interlayer dielectric film of excellent planarity is thus formed.
Inventors
- 👤 Changgyu Kim
- 👤 Changki Hong
- 👤 Uin Chung
- 👤 Yongchul Ahn
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 00:15
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6532; H10P14/6534; H10P70/00; H10P70/20; H10P70/23; H10P95/00; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/077; H10W20/093; H10W20/096; H10P14/6336; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; H10P14/6924
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
66 words
A method for fabricating an interlayer dielectric film comprising the steps of: (a) preparing a semiconductor substrate having electrical elements thereon; (b) depositing a dielectric film containing boron and phosphorous onto said substrate; (c) carrying out a surface treatment on said dielectric film through a plasma treatment; and (d) performing reflow after performing said surface treatment, at a temperature below about 850° C. after said treatment.
Claim 2
Independent Claim
66 words
A method for fabricating an interlayer dielectric film comprising the steps of: (a) preparing a semiconductor substrate having electrical elements thereon; (b) depositing a dielectric film containing boron and phosphorous onto said substrate; (c) carrying out a surface treatment on said dielectric film through a plasma treatment; and (d) performing reflow after performing said surface treatment, at a temperature below about 850° C. after said treatment.
Claim 3
Dependent Claim
21 words
The method according to claim 1, wherein said dielectric film contains boron at concentrations ranging from 4 to 15 wt %.
Claim 4
Dependent Claim
21 words
The method according to claim 1, wherein said dielectric film contains phosphorous at concentrations ranging from 4 to 15 wt %.
Claim 5
Dependent Claim
32 words
The method according to claim 1, wherein a plasma source gas for said surface treatment step is selected from the group consisting of N 2 O, O 2 or O 3 .
Claim 6
Dependent Claim
24 words
The method according to claim 1, further including the step of wet cleaning the surface of the dielectric film prior to said reflow step.
Claim 7
Dependent Claim
17 words
The method according to claim 5, wherein said wet cleaning step comprises H 2 SO 4 boiling.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-10 | 1998-10-10 | 1999-04-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-10 | 2002-10-10 | 2003-04-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-10 | 2006-10-10 | 2007-04-11 | $7700.00 | Window Closed / Lapsed |