US5677015A
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US
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High dielectric constant material containing tantalum, process for forming high dielectric constant film containing tantalum, and semiconductor device using the same
Assignee: Sony Corp
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Filing: 1995-03-16
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Granted: 1997-10-14
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Expires: 2015-03-16
Abstract
Abstract A high dielectric constant material containing tantalum expressed by chemical formula Ta x O y N z , where x, y, and z are each a value which in total yield 1, z is 0.1 or higher but 0.625 or lower, y is 0 or higher but 0.6 or lower, and 0.4y and 0.6z in total equals to the value of x or lower, and a process for depositing a film of the material by means of chemical vapor deposition using Cp m Ta(N 3 ) n , where Cp represents cyclopentane, and m+n=5, or using a gaseous tantalum-containing organometallic compound, or by a means comprising plasma treatment under a gas containing nitrogen. Also claimed are a semiconductor device and a MOS transistor using the high dielectric film containing tantalum.
Inventors
- 👤 Toshiaki Hasegawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 16:03
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/06; C23C16/18; C23C16/22; C23C16/30; H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393; C23C16/308; C23C16/34; H10D; H10D1/00; H10D1/60; H10D1/68; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; Y; Y10; Y10S; Y10S427/00; Y10S427/103; Y10S427/106
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
85 words
A method for making a tantalum-containing dielectric layer on a substrate comprising the steps of: providing a substrate having a surface; and forming a tantalum-containing dielectric film on the surface by plasma-assisted chemical vapor deposition using a mixed gas comprising a cyclopentane tantalum azide having the formula (cyclopentyl) m Ta(N 3 ) n , wherein m and n are greater then 0 and m+n=5 and a nitrogen-containing gas selected from NH 3 , N 2 O, N 2 H 2 , or N 2 .
Claim 2
Independent Claim
85 words
A method for making a tantalum-containing dielectric layer on a substrate comprising the steps of: providing a substrate having a surface; and forming a tantalum-containing dielectric film on the surface by plasma-assisted chemical vapor deposition using a mixed gas comprising a cyclopentane tantalum azide having the formula (cyclopentyl) m Ta(N 3 ) n , wherein m and n are greater then 0 and m+n=5 and a nitrogen-containing gas selected from NH 3 , N 2 O, N 2 H 2 , or N 2 .
Claim 3
Dependent Claim
36 words
A method as defined in claim 1, wherein the forming step is performed at a pressure of about 30 Pa, a substrate temperature of about 400° C. and an applied RF power of about 500 W.
Claim 4
Dependent Claim
28 words
A method as defined in claim 1, wherein the tantalum-containing dielectric film formed comprises Ta 3 N 5 and has a specific dielectric constant of 40 or higher.
Claim 5
Dependent Claim
24 words
A method as defined in claim 1, wherein the mixed gas further comprises an oxygen-containing gas selected from O 2 or O 3 .
Claim 6
Dependent Claim
24 words
A method as defined in claim 1, wherein the tantalum-containing dielectric film formed has a nitrogen concentration of from 10 to 62.5 atomic %.
Claim 7
Independent Claim
116 words
A method for making a tantalum-containing dielectric layer on a substrate comprising the steps of: providing a substrate having a surface; and forming a tantalum-containing dielectric film on the surface by low pressure thermal chemical vapor deposition at a pressure of from 10 to 200 Pa and at a substrate temperature of from 400° to 800° C. using a mixed gas comprising a cyclopentane tantalum azide having the formula (cyclopentyl) m Ta(N 3 ) n , wherein m and n are greater than 0 and m+n=5, a nitrogen-containing gas selected from NH 3 , N 2 O, N 2 H 2 or N 2 and an oxygen-containing gas selected from O 2 or O 3 .
Claim 8
Independent Claim
116 words
A method for making a tantalum-containing dielectric layer on a substrate comprising the steps of: providing a substrate having a surface; and forming a tantalum-containing dielectric film on the surface by low pressure thermal chemical vapor deposition at a pressure of from 10 to 200 Pa and at a substrate temperature of from 400° to 800° C. using a mixed gas comprising a cyclopentane tantalum azide having the formula (cyclopentyl) m Ta(N 3 ) n , wherein m and n are greater than 0 and m+n=5, a nitrogen-containing gas selected from NH 3 , N 2 O, N 2 H 2 or N 2 and an oxygen-containing gas selected from O 2 or O 3 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-10-13 | 2001-04-14 | 2001-10-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-10-13 | 2005-04-14 | 2005-10-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-10-13 | 2009-04-14 | 2009-10-14 | $7700.00 | Window Closed / Lapsed |