US5248629A
Expired / Lapsed
US
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Process for fabricating capacitor for semiconductor storage device
Assignee: Sony Corp
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Filing: 1992-07-09
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Granted: 1993-09-28
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Expires: 2012-07-09
Abstract
Abstract A capacitor (12) of a semiconductor storage device, for example, dynamic RAM (11), comprises a storage node (31), a storage capacitance portion (32) formed of tantalum oxynitride film, and a plate (33). The tantalum oxynitride film is produced by a chemical vapor deposition (CVD) process using a reactant gas containing a dialkylaminotantalum. The capacitor exhibits reduced leakage current and enhanced charge storage capacity.
Inventors
- 👤 Masakazu Muroyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 19:14
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D1/00; H10D1/01; H10D1/045; H10D1/047; H10D1/60; H10D1/68
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
108 words
A process for fabricating a capacitor for semiconductor storage device, said capacitor having a storage node, a storage capacitance portion, and a plate which are stacked on a substrate, and said storage capacitance portion being comprised of a tantalum oxynitride film, the process comprising: a first step of forming said storage node on the substrate; a second step of growing the tantalum oxynitride film on a surface of said storage node by a chemical vapor deposition process using a reactant gas containing a dialkylaminotantalum, so as to form said storage capacitance portion; and a third step of forming said plate on a surface of said storage capacitance portion.
Claim 2
Dependent Claim
108 words
A process for fabricating a capacitor for semiconductor storage device, said capacitor having a storage node, a storage capacitance portion, and a plate which are stacked on a substrate, and said storage capacitance portion being comprised of a tantalum oxynitride film, the process comprising: a first step of forming said storage node on the substrate; a second step of growing the tantalum oxynitride film on a surface of said storage node by a chemical vapor deposition process using a reactant gas containing a dialkylaminotantalum, so as to form said storage capacitance portion; and a third step of forming said plate on a surface of said storage capacitance portion.
Claim 3
Dependent Claim
12 words
The fabrication process according to claim 1, wherein the dialkylaminotantalum is dimethylaminotantalum.
Claim 4
Dependent Claim
12 words
The fabrication process according to claim 1, wherein the dialkylaminotantalum is diethylaminotantalum.
Claim 5
Dependent Claim
12 words
The fabrication process according to claim 1, wherein the dialkylaminotantalum is dipropylaminotantalum.
Claim 6
Dependent Claim
41 words
The fabrication process according to claim 1, wherein the quantity of the dialkylaminotantalum supplied in carrying out the chemical vapor deposition process is regulated so as to control the amount of nitrogen to be contained in the resulting tantalum oxynitride film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-09-27 | 1997-03-29 | 1997-09-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-09-27 | 2001-03-29 | 2001-09-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-09-27 | 2005-03-29 | 2005-09-28 | $7700.00 | Window Closed / Lapsed |