EP0778496B1
Expired / Lapsed
EP
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Method and apparatus for depositing antireflective coating
Assignee: Applied Materials Inc
•
Filing: 1996-12-05
•
Granted: 2002-06-12
•
Expires: 2016-12-05
Abstract
No abstract record available.
Inventors
- 👤 David Cheung
- 👤 Joe Feng
- 👤 Judy H. Huang
- 👤 Wai-Fan Yau
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 03:28
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043; G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/308; C23C16/34; C23C16/345; C23C16/44; C23C16/52; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/081
Claims Analysis
Total Claims: 42
Claim 1
Independent Claim
221 words
A substrate processing system (10)
comprising: a vacuum chamber (15); a substrate supporter (12), located within
the vacuum chamber (15), for holding a substrate; a gas manifold (11) for introducing process
gases into the vacuum chamber (15); a gas distribution system, coupled to the
gas manifold (11), for distributing the process gases
to the gas manifold (11) from gas sources; a power supply (25) coupled between the substrate
supporter (12) and the gas manifold (11); a vacuum system for controlling pressure within
the vacuum chamber (15); a controller (34), including a computer, for
controlling the gas distribution system, the power
supply (25) and the vacuum system; and a memory (38) coupled to the controller (34)
comprising a computer usable medium having a computer
readable program code embodied therein for directing
operation of the substrate processing system, characterised in that the computer readable program
code includes: computer readable program code for causing the
gas distribution system to introduce a first process
gas comprising a mixture of SiH 4 and N 2 O into the
vacuum chamber (15) to deposit a first plasma enhanced
CVD antireflective layer over the wafer; and computer readable program code for causing the
gas distribution system to introduce a second process
gas comprising He into the vacuum chamber (15) to
lower the deposition rate of the first layer.
Claim 2
Dependent Claim
70 words
A substrate processing system as claimed in
claim 1, wherein the computer readable program code
for causing the gas distribution system (10) to
introduce the first process gas comprising a mixture
of SiH 4 and N 2 O into the chamber (15) controls the
introduction of the SiH 4 to be between 5 to 300 sccm,
and the rate of N 2 O to be between 5 to 300 sccm.
Claim 3
Dependent Claim
47 words
A substrate processing system (10) as
claimed in claim 2, wherein the computer readable
program code for causing the gas distribution system
to introduce a second process gas comprising He into
the chamber (15) controls the chamber pressure at 133
to 800 pascals (1 to 6 torr).
Claim 4
Dependent Claim
66 words
A substrate processing system (10) as
claimed in claim 3, wherein the computer readable
program code for causing the gas distribution system
to introduce the first process gas comprising a
mixture of SiH 4 and N 2 O into the chamber (15) controls
the introduction of the SiH 4 to be at a ratio of
between 0.5 to 3 times the amount of N 2 O.
Claim 5
Dependent Claim
60 words
A substrate processing system (10) as
claimed in claim 1 further comprising: computer readable program code for causing
the gas distribution system to introduce a third
process gas comprising the NH 3 into the chamber (15);
and computer readable program code for causing
the gas distribution system to introduce a fourth
process gas comprising N 2 into the chamber (15).
Claim 6
Dependent Claim
94 words
A substrate processing system (10) as
claimed in claim 5, wherein: the computer readable program code for
causing the gas distribution system to introduce a
third process gas comprising NH 3 into the chamber (15)
controls the introduction of the NH 3 to be between a
rate of 0 to 300 sccm; and the computer readable program code for
causing the gas distribution system to introduce a
fourth process gas comprising N 2 into the chamber (15)
controls the introduction of the N 2 to be between a
rate of 0 to 4000 sccm.
Claim 7
Dependent Claim
29 words
A substrate processing system (10) as
claimed in claim 1 further comprising computer
readable program code for controlling the gas
distribution system to operate for a specified time
period.
Claim 8
Dependent Claim
72 words
A substrate processing system (10) as
claimed in claim 7, wherein the computer readable
program code for controlling the gas distribution
system to operate for a specified time period
comprises computer readable program code for causing
the first plasma enhanced CVD layer to be formed to a
thickness which is an odd multiple, greater than one,
of a wavelength of light to be used in a subsequent
process operation on the layer.
Claim 9
Dependent Claim
73 words
A substrate processing system (10) as
claimed in claim 2, wherein the computer readable
program code for causing the gas distribution system
to introduce the first process gas comprising a
mixture of SiH 4 and N 2 O into the chamber (15) controls
the introduction of the SiH 4 to be between 15 to 160
sccm, and the rate of N 2 O to be between a rate of 15
to 160 sccm.
Claim 10
Dependent Claim
74 words
A substrate processing system (10) as
claimed in claim 9 further comprising: computer readable program code for causing
the gas distribution system to introduce a third
process gas comprising NH3 into the chamber (15) at a
rate of less than 150 sccm; and computer readable programme code for causing
the gas distribution system to introduce a fourth
process gas comprising N 2 into the chamber (15) at a
rate of less than 300 sccm.
Claim 11
Independent Claim
64 words
A method for controlling a plasma enhanced
process to achieve thickness control in thin antireflective film
deposition, characterised in that the method comprises the steps of: determining an amount of an inert gas
required to achieve a desired lower deposition rate; adding the inert gas to the process; and controlling the step of adding the inert gas
to achieve the desired lower deposition rate.
Claim 12
Dependent Claim
13 words
A method as claimed in claim 11, wherein the
inert gas comprises helium.
Claim 13
Dependent Claim
17 words
A method as claimed in claim 11, wherein the
process comprises a plasma enhanced silane oxide
process.
Claim 14
Dependent Claim
17 words
A method as claimed in claim 11, wherein the
process comprises a plasma enhanced silane oxynitride
process.
Claim 15
Dependent Claim
17 words
A method as claimed in claim 14, wherein the
process comprises a plasma enhanced silane nitride
process.
Claim 16
Dependent Claim
67 words
A method as claimed in claim 11 further
comprising the steps of: maintaining a chamber pressure in the range
of 133-800 Pa (1-6 Torr) ; connecting the chamber to a RF power supply; supporting the substrate on a supporter; heating the substrate; introducing SiH 4 into the chamber at a rate
of 5-300 sccm; introducing N 2 O into the chamber at a rate
of 5-300 sccm.
Claim 17
Dependent Claim
24 words
A method as claimed in claim 16, wherein the
step of heating comprises heating the substrate to a
temperature in the range of 200-400°C.
Claim 18
Dependent Claim
32 words
A method as claimed in claim 16, wherein the
step of supporting the substrate comprises placing the
supporter at a distance from a gas distribution system
in the range of 200-600 mils.
Claim 19
Dependent Claim
38 words
A method as claimed in claim 11 further
comprising: introducing NH 3 into the chamber at a rate
of less than 300 sccm; and introducing N 2 into the chamber at a rate of
less than 4000 sccm.
Claim 20
Dependent Claim
109 words
A method as claimed in claim 11 further
comprising the steps of: forming an antireflective layer over a
substrate; forming a layer of additional material on
the antireflective layer; and wherein the antireflective layer comprises a
film which, at a given exposure wavelength, will have
a first reflection from a first interface between the
additional material and the antireflective layer, and
a second reflection from a second interface between
the antireflective layer and the substrate, the second
reflection being an odd number which is at least 3
multiplied by 180° out of phase with the first
reflection, whereby the first and second reflections
at least partially cancel each other.
Claim 21
Dependent Claim
13 words
A method as claimed in claim 20, wherein the
additional material comprises photoresist.
Claim 22
Dependent Claim
29 words
A method as claimed in claim 21, wherein the
antireflective layer has a refractive index in the
range of 2.1-2.4, and an absorptive index in the range
of 0.2-0.5.
Claim 23
Dependent Claim
19 words
A method as claimed in claim 22, wherein the
antireflective layer has a thickness between 50-100 nm
(500-1000 angstroms).
Claim 24
Independent Claim
83 words
A method for achieving plasma stability for
a process during deposition of an antireflective layer
in a processing chamber (15), characterised in that the method comprises
the steps of: "determining an amount of an inert gas
required to achieve a desired lower deposition rate; adding the inert gas to the process; controlling the step of adding the inert gas
to achieve the desired lower deposition rate; and controlling the amount of inert gas added to
the process to control the processing chamber
pressure.
Claim 25
Dependent Claim
28 words
A method as claimed in claim 24, wherein the
inert gas comprises helium and the processing chamber
pressure is between 600 and 733 Pa (4.5 and 5.5 torr).
Claim 26
Dependent Claim
108 words
A process for depositing an antireflective
layer on a substrate in a semiconductor processing
chamber (15), characterised in that comprises the steps of: using He to provide a chamber pressure in
the range of 133-800 Pa (1-6 Torr) to lower the deposition rate of the antireflective layer; connecting the chamber (15) to a RF power
supply (25) to receive 50 to 500 Watts; supporting the substrate within the chamber; heating the substrate to a temperature in
the range of 200-400°C; introducing SiH 4 through a gas distribution
system at a 5-300 sccm; and introducing N 2 O through the gas distribution
system at a rate of 5-300 sccm.
Claim 27
Dependent Claim
25 words
A process as claimed in claim 26 further
comprising the step of introducing NH 3 into the
chamber (15) at a rate of 0-300 sccm.
Claim 28
Dependent Claim
25 words
A process as claimed in claim 27 further
comprising the step of introducing N 2 into the chamber
(15) at a rate of 0-4000 sccm.
Claim 29
Dependent Claim
22 words
A process as claimed in claim 26, wherein
the He is introduced into the chamber (15) at a rate
of 5-5000 sccm.
Claim 30
Dependent Claim
70 words
A process as claimed in claim 26, wherein
the antireflective layer has a refractive index n, an
absorptive index k, a thickness t, and a reflectance
r, the process further comprising the step of
increasing the rate at which the NH 3 is introduced
into the chamber to cause the refractive index n and
the thickness t to increase, and the absorptive index
k and the reflectance r to decrease.
Claim 31
Dependent Claim
69 words
A process as claimed in claim 26, wherein
the antireflective layer has a refractive index n, an
absorptive index k, a thickness t, and a reflectance
r, the process further comprising the step of
increasing the rate at which the N 2 is introduced into
the chamber to cause the refractive index n, the
absorptive index k, and the reflectance r to decrease,
and the thickness t to increase.
Claim 32
Dependent Claim
68 words
A process as claimed in claim 26, wherein
the antireflective layer has a refractive index n, an
absorptive index k, a thickness t, and a reflectance
r, the process further comprising the step of
increasing the rate at which the He is introduced into
the chamber to cause the refractive index n, the
absorptive index k, and the reflectance r to increase,
and the thickness t to decrease.
Claim 33
Dependent Claim
56 words
A process as claimed in claim 26, wherein
the antireflective layer has a refractive index n, an
absorptive index k, a thickness t, and a reflectance
r, the process further comprising the step of
increasing the temperature to cause the refractive
index n, the absorptive index k, the thickness t, and
the reflectance r to increase.
Claim 34
Dependent Claim
57 words
A process as claimed in claim 26, wherein
the antireflective layer has a refractive index n, an
absorptive index k, a thickness t, and a reflectance
r, the process further comprising the step of
increasing the chamber pressure to cause the
refractive index n, the absorptive index k, the
thickness t, and the reflectance r to decrease.
Claim 35
Dependent Claim
63 words
A process as claimed in claim 26, wherein
the antireflective layer has a refractive index n, an
absorptive index k, a thickness t, and a reflectance
r, the process further comprising the step of
increasing the power supplied to the chamber to cause
the refractive index n, the absorptive index k, and
the reflectance r to decrease, and the thickness t to
increase.
Claim 36
Dependent Claim
64 words
A process as claimed in claim 26, wherein
the antireflective layer has a refractive index n, an
absorptive index k, a thickness t, and a reflectance
r, the process further comprising the step of
increasing the distance between the supporter and the
gas distribution system to cause the refractive index
n, the absorptive index k, the thickness t, and the
reflectance r to decrease.
Claim 37
Dependent Claim
65 words
A process as claimed in claim 26, wherein
the antireflective layer has a refractive index n, an
absorptive index k, a thickness t, and a reflectance
r, the process further comprising the step of
increasing the rate at which SiH 4 is introduced into
the chamber to cause the refractive index n, the
absorptive index k, the thickness t, and the
reflectance r to increase.
Claim 38
Dependent Claim
69 words
A process as claimed in claim 26, wherein
the antireflective layer has a refractive index n, an
absorptive index k, a thickness t, and a reflectance
r, the process further comprising the step of
increasing the rate at which N 2 O is introduced into
the chamber to cause the refractive index n, the
absorptive index k, and the reflectance r to decrease,
and the thickness t to increase.
Claim 39
Dependent Claim
83 words
A method of forming a photoresist pattern,
the method comprising the steps of: forming an antireflective layer on a
substrate by a method as defined in claim 11; and forming a layer of photoresist on the
antireflective layer, the layer having a thickness and
refractive indices such that a first reflection from
an interface between the photoresist and the
antireflective layer will be at least 540° out of
phase with a second reflection from an interface
between the antireflective layer and the substrate.
Claim 40
Dependent Claim
63 words
A method as claimed in claim 39, wherein: the substrate comprises A1; the first and second reflections are from
light having a wavelength of about 248 nm; and wherein the antireflective film has a
refractive index n in the range of 2.1-2.4, an
absorptive index k in the range of 0.2-0.5, and a
thickness t in the range of 50-100 nm (500-1000
angstroms).
Claim 41
Dependent Claim
19 words
A method as claimed in claim 40, wherein the
substrate further comprises at least one of Si and Cu.
Claim 42
Dependent Claim
27 words
A method as claimed in claim 39, wherein
light is used to expose the photoresist, and the light
has a wavelength in the range of 190-900 nm.
References Cited (Backward Citations)
No citation records indexed.
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