US5883014A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for treating via sidewalls with hydrogen plasma
Assignee: United Microelectronics Corp
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Filing: 1997-08-05
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Granted: 1999-03-16
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Expires: 2017-08-05
Abstract
Abstract A method for treating via sidewalls comprising the steps of providing a substrate having a number of metallic wires already formed; depositing a liner oxide layer; depositing an organic spin-on-glass layer; and depositing a second oxide layer. The second oxide layer is planarized by a chemical-mechanical polishing method. Photolithographic and etching methods, employing oxygen plasma treatment as well as a wet etching removal method are used to form vias above the metallic layers. A hydrogen plasma treatment is performed for the via sidewalls to prevent the occurrence of out-gassing and to obtain superior electrical properties. A titanium/titanium nitride film is deposited, and aluminium or tungsten is deposited into the vias and to form aluminium or tungsten plugs, thus completing the manufacturing process according to this invention. A semiconductor device formned by this method is also described.
Inventors
- 👤 Shiaw-Rong Chen
- 👤 Horng-Bor Lu
- 👤 Jenn-Tarng Lin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:15
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/076; H10P; H10P14/00; H10P14/60; H10P95/00; H10P95/94; H10W20/093; H10W20/096
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
100 words
A method for treating via sidewalls of a semiconductor device which comprises the steps of: providing a substrate having a number of metallic wires formed thereon; depositing a first oxide layer on the substrate; depositing a spin-on-glass layer on the first oxide layer; depositing a second oxide layer on the spin-on-glass layer; planarizing the second oxide layer; selectively etching portions of the first and second oxide layers and the spin-on-glass layer to form vias above the metallic layers; treating the via sidewalls with hydrogen plasma; depositing a titanium/titanium nitride film on the vias; and depositing metal to fill the vias.
Claim 2
Independent Claim
100 words
A method for treating via sidewalls of a semiconductor device which comprises the steps of: providing a substrate having a number of metallic wires formed thereon; depositing a first oxide layer on the substrate; depositing a spin-on-glass layer on the first oxide layer; depositing a second oxide layer on the spin-on-glass layer; planarizing the second oxide layer; selectively etching portions of the first and second oxide layers and the spin-on-glass layer to form vias above the metallic layers; treating the via sidewalls with hydrogen plasma; depositing a titanium/titanium nitride film on the vias; and depositing metal to fill the vias.
Claim 3
Dependent Claim
21 words
A method according to claim 1, wherein the step of depositing the first oxide layer includes forming a liner oxide layer.
Claim 4
Dependent Claim
20 words
A method according to claim 1, wherein the step of depositing the spin-on-glass layer includes forming an organic spin-on-glass layer.
Claim 5
Dependent Claim
19 words
A method according to claim 1, wherein the step of depositing the spin-on-glass layer includes forming a fluidic layer.
Claim 6
Dependent Claim
16 words
A method according to claim 1, wherein the step of depositing the spin-on-glass layer is non-fluidic.
Claim 7
Dependent Claim
32 words
A method according to claim 1, also including the step of performing a partial etching back operation to obtain a more planar spin-on-glass layer after the step of depositing the spin-on-glass layer.
Claim 8
Dependent Claim
18 words
A method according to claim 1, wherein the step of planarizing the second oxide layer includes chemical-mechanical polishing.
Claim 9
Dependent Claim
20 words
A method according to claim 1, wherein the step of selectively etching includes oxygen plasma treatment and wet etch removal.
Claim 10
Dependent Claim
15 words
A method according to claim 1, wherein the step of depositing metal includes using aluminium.
Claim 11
Dependent Claim
15 words
A method according to claim 1, wherein the step of depositing metal includes using tungsten.
References Cited (Backward Citations)
US5280190A
Cited
US5294836A
Cited
US5286675A
Cited
US5498889A
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US5719083A
Cited
US5506177A
Cited
US5472890A
Cited
US5729041A
Cited
US5763954A
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US5652182A
Cited
US5691240A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-03-15 | 2002-09-14 | 2003-03-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-03-15 | 2006-09-14 | 2007-03-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-03-15 | 2010-09-14 | 2011-03-16 | $7700.00 | Window Closed / Lapsed |