Abstract A device structure is described wherein metal silicide contacts are made to polycrystalline silicon regions and nonmetal silicide contacts to monocrystalline silicon regions of an integrated circuit device. Polycrystalline silicon regions are formed and patterned. A dielectric masking layer is formed over the polycrystalline and monocrystalline silicon regions. The surfaces of the masking layer are covered and the irregularities of the surfaces filled with an organic material to thereby planarize the surfaces. The organic material is blanket etched until the masking layer which covers the polycrystalline silicon regions is exposed and allowing the masking layer which covers the monocrystalline silicon regions to remain covered with organic material. The exposed masking layer is removed from the polycrystalline regions. The remaining organic material is removed. A layer of metal film is blanket deposited over the wafer. The metal silicide contacts to polycrystalline regions are formed. An insulating layer is formed over the surface of the structure. Openings are made in the insulating layer to the monocrystalline regions and the silicide layer on top of the polycrystalline silicon regions. Nonmetal silicide contacts, such as aluminum or tungsten with or without a barrier metal are made to the monocrystalline regions.
A bipolar integrated circuit structure formed in and on a monocrystalline silicon substrate comprising: bipolar transistor regions including emitter, base and collector regions located in said substrate; polycrystalline silicon conductive runners located over said substrate having self aligned metal silicide contacts; an insulating layer over the surface structures of said integrated circuit structure having openings therethrough to said bipolar transistor regions in the monocrystalline silicon substrate; contacts other than metal silicide composition to said bipolar transistor regions through said openings and filling said openings; and means for electrically connecting at least some of said base regions and conductive runners.
Claim 2
Dependent Claim
99 words
A bipolar integrated circuit structure formed in and on a monocrystalline silicon substrate comprising: bipolar transistor regions including emitter, base and collector regions located in said substrate; polycrystalline silicon conductive runners located over said substrate having self aligned metal silicide contacts; an insulating layer over the surface structures of said integrated circuit structure having openings therethrough to said bipolar transistor regions in the monocrystalline silicon substrate; contacts other than metal silicide composition to said bipolar transistor regions through said openings and filling said openings; and means for electrically connecting at least some of said base regions and conductive runners.
Claim 3
Dependent Claim
19 words
The integrated circuit of claim 1 wherein said contacts to said bipolar transistor regions are base and collector contacts.
Claim 4
Dependent Claim
27 words
The structure of claim 1 wherein said metal silicide is composed of a metal from the group consisting of titanium, cobalt, tantalum, molybdenum, tungsten, palladium and platinum.
Claim 5
Dependent Claim
15 words
The structure of claim 1 wherein said insulating layer is composed of a borophosphosilicate glass.
Claim 6
Dependent Claim
28 words
The structure of claim 1 wherein each of said contacts other than metal silicide composition to said bipolar transistor regions includes a barrier layer and an aluminium layer.
Claim 7
Dependent Claim
21 words
The structure of claim 1 wherein the contact to said emitter region is polycrystalline silicon with self aligned metal silicide contact.
Claim 8
Dependent Claim
30 words
The integrated circuit of claim 1 wherein at least some said base regions are directly and electrically connected to at least some said conductive runners using the same level metallurgy.