US4560421A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method of manufacturing the same
Assignee: Toshiba Corp
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Filing: 1981-10-02
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Granted: 1985-12-24
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Expires: 2001-10-02
Abstract
Abstract Disclosed is a method of manufacturing a semiconductor device comprising a step of forming a field region formation insulating film on a semiconductor substrate, a step of forming a mask pattern covering a portion of the insulating film corresponding to an intended element region, a step of ion implanting a field inversion prevention impurity into an element isolation region of the substrate with the mask pattern used as a shield, a step of forming an etching-proof layer on a portion of the insulating film corresponding to a field region, a step of removing the mask pattern to let an etching-proof layer portion be left on the intended element isolation region, and a step of selectively etching the insulating film with the remaining etching-proof layer used as a mask to form the element isolation region. Also disclosed is a semiconductor device manufactured by making use of this method.
Inventors
- 👤 Satoshi Maeda
- 👤 Hiroshi Iwai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 20:35
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/102; H10D62/112; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/018; H10W10/10; Y; Y10; Y10S; Y10S438/00; Y10S438/98
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
115 words
A method of manufacturing a semiconductor device, comprising: (a) a step of forming a field region formation insulating film on a semiconductor substrate; (b) a step of forming a mask pattern covering a portion of said insulating film corresponding to an intended element region; (c) a step of ion implanting a field inversion prevention impurity into an intended element isolation region of said substrate with said mask pattern as a shield; (c') a step of forming a protective film as an etch stop on said field region formation insulating film; and (d) a step of removing a portion of said insulating film beneath said mask pattern, thereby forming an element isolation region on the substrate.
Claim 2
Independent Claim
115 words
A method of manufacturing a semiconductor device, comprising: (a) a step of forming a field region formation insulating film on a semiconductor substrate; (b) a step of forming a mask pattern covering a portion of said insulating film corresponding to an intended element region; (c) a step of ion implanting a field inversion prevention impurity into an intended element isolation region of said substrate with said mask pattern as a shield; (c') a step of forming a protective film as an etch stop on said field region formation insulating film; and (d) a step of removing a portion of said insulating film beneath said mask pattern, thereby forming an element isolation region on the substrate.
Claim 3
Dependent Claim
172 words
A method of manufacturing a semiconductor device according to claim 1, which further comprises after the step (d): (e) a step of depositing a non-monocrystal semiconductor layer and covering said non-monocrystal semiconductor layer into a single crystal semiconductor layer by irradiation with an energy beam; (f) a step of depositing silicon nitride atop said single crystal semiconductor layer to form silicon nitride film on a region of said single crystal semiconductor layer at least including a recessed portion thereof corresponding to a region isolated by said element isolation region; and (g) a step of processing said silicon nitride film by the reactive ion etching process to let a portion of said silicon nitride layer be left on said recessed portion of said single crystal semiconductor layer and then etching by means of a reactive ion etching method said single crystal semiconductor layer and said silicon nitride film to form an element region consisting of the single crystal semiconductor layer on a portion of the semiconductor substrate isolated by said element isolation region.
Claim 4
Dependent Claim
168 words
A method of manufacturing a semiconductor device according to claim 1, which further comprises after the step (d): (e) a step of depositing a non-monocrystal semiconductor layer; (f) a step of depositing silicon nitride atop said semiconductor layer to form a silicon nitride film on a region of said non-monocrystal semiconductor layer at least including a recessed portion thereof corresponding to a region isolated by said element isolation region; (g) a step of processing said silicon nitride film by the reactive ion etching method to let said silicon nitride film be left on said recessed portion of said non-monocrystal semiconductor layer; and (h) a step of etching by means of a reactive ion etching method said non-monocrystal semiconductor layer and the remaining silicon nitride film to let a portion of the non-monocrystal semiconductor layer be buried on a portion of the semiconductor substrate isolated by said element isolation region and then converting said buried non-monocrystal semiconductor layer into a single crystal layer by irradiating with an energy beam.
Claim 5
Dependent Claim
39 words
A method of manufacturing a semiconductor device according to claim 1, which further comprises a step (a") of processing said insulating film such as to increase the etching rate of a superficial portion thereof compared to the inner portion.
Claim 6
Dependent Claim
39 words
A method of manufacturing a semiconductor device according to claim 4, wherein said step (a') includes a step of covering said insulating film with a cover film of a material having a higher etching rate than said insulating film.
Claim 7
Dependent Claim
35 words
A method of manufacturing a semiconductor device according to claim 5, wherein the material of said cover film is a member of a group consisting of phosphorus-containing glass, arsenic-containing glass and boron and phosphorus-containing glass.
Claim 8
Dependent Claim
31 words
A method of manufacturing a semiconductor device according to claim 4, wherein said step (a') includes a step of subjecting said insulating film to the bombardment by an active radical gas.
Claim 9
Dependent Claim
32 words
A method of manufacturing a semiconductor device according to claim 7, wherein said active radical gas is a member of group consisting of active CF 4 and C 2 F 6 gases.
Claim 10
Dependent Claim
51 words
A method of manufacturing a semiconductor device according to claim 1, which further comprises after the step (d): a step of depositing a single crystal semiconductor layer by the selective epitaxial growth method on a portion of said semiconductor substrate isolated by said element isolation region to form the element region.
Claim 11
Dependent Claim
70 words
A method of manufacturing a semiconductor device according to claim 1, which further comprises after the step (d): a step of epitaxially growing silicon on the entire surface to form a single crystal silicon layer on the portion of said semiconductor substrate isolated by said element isolation region and also form a polycrystalline silicon layer on said element isolation region; and a step of selectively etching said polycrystalline silicon layer.
Claim 12
Dependent Claim
222 words
A method of manufacturing a semiconductor device according to claim 1, in which said semiconductor device is a complementary MOS semiconductor device, and which further comprises after the step (d): (e) a step of forming an insulating film on at least a portion of the semiconductor substrate consisting of a well region or a portion of the element region other than a well region; (f) a step of depositing a non-monocrystal semiconductor layer on the entire surface; (g) a step of converting said non-monocrystal semiconductor layer into a single crystal layer by irradiation with an energy beam; (h) a step of depositing silicon nitride on said single crystal semiconductor layer to form a silicon nitride film on a portion of said single crystal semiconductor layer at least including a recessed portion thereof corresponding to a region isolated by said element isolation region; and (i) a step of processing said silicon nitride layer by the reactive ion etching method to let a portion of the silicon nitride film be selectively left on said recessed portion of said single crystal semiconductor and then etching by means of a reactive ion etching method said single crystal semiconductor layer and said silicon film to form an element region constituted by the single crystal semiconductor layer on said semiconductor substrate portion isolated by said element isolation region.
Claim 13
Dependent Claim
23 words
A method according to claim 11, wherein the step (e) comprises a step of forming the insulating film only on the well region.
Claim 14
Dependent Claim
30 words
A method according to claim 11, wherein the step (e) comprises a step of forming the insulating film only a portion of the element region other than said well region.
Claim 15
Dependent Claim
21 words
A method according to claim 11, 12 or 13, wherein the thickness of the insulating film is less than 3,000 Å.
Claim 16
Independent Claim
80 words
A method according to any one of claims 1 to 3 or 4 to 13, which further comprises before or after the step (c) a step of depositing an etching-proof layer on the entire top surface, and removing the etching-proof layers deposited on said mask pattern together with said mask pattern, and wherein the step (d) comprises a step of selectively etching said insulating film with said remaining etching-proof film used as a mask to form an element isolation region.
Claim 17
Dependent Claim
78 words
A method of manufacturing a semiconductor device according to claim 1, which further comprises after the step (d): a step of depositing a non-monocrystal semiconductor layer; and a step of etching said non-monocrystal semiconductor layer to let a portion of the non-monocrystal semiconductor layer be buried on a portion of the semiconductor substrate isolated by said element isolation region and then converting said buried non-monocrystal semiconductor layer into a single crystal layer by irradiating with an energy beam.
Claim 18
Independent Claim
123 words
A method of manufacturing a semiconductor device according to any one of claims 1 to 3 or 4 to 13, which further comprises after the step (a): a step of depositing a cover film having a property of permitting the selective etching of said insulating film and after the step (c): a step (c") of ion implanting an impurity into said cover film thereby denaturing the ion implanted portion of the cover film, and wherein the step (d) comprises: a step of removing said mask pattern and removing a portion of said cover film which is not denatured; and a step of selectively etching said insulating film with said remaining denatured cover film used as a mask to form an element isolation region.
Claim 19
Dependent Claim
24 words
A method of manufacturing a semiconductor device according to claim 17, wherein the ion implantations of said steps (c) and (c") are simultaneously effected.
Claim 20
Dependent Claim
24 words
A method of manufacturing a semiconductor device according to claim 17, wherein the ion implantations of said steps (c) and (c") are separately effected.
Claim 21
Dependent Claim
26 words
A method of manufacturing a semiconductor device according to claim 19, wherein the order of the ion implanting step (c) and step (c") are mutually interchanged.
Claim 22
Independent Claim
123 words
A method of manufacturing a semiconductor device according to any one of claims 1 to 3 or 4 to 13, which further comprises after the step (a): a step of depositing a cover film having a property of permitting the selective etching of said insulating film and after the step (c): a step (c"') of oxidizing or nitriding said cover film with said mask pattern as a mask, thereby denaturing said cover film, and wherein the step (d) comprises: a step of removing said mask pattern and removing a portion of said cover film which is not denatured; and a step of selectively etching said insulating film with said remaining denatured cover film used as a mask to form an element isolation region.
Claim 23
Dependent Claim
20 words
A method of manufacturing a semiconductor device according to claim 21, wherein said step (c"') is an anodic oxidation step.
Claim 24
Independent Claim
52 words
A method of manufacturing a semiconductor device according to any one of claims 1 to 3 or 4 to 13, wherein said step (d) comprises exposing the wafer to a reactive gas containing hydrogen fluoride to selectively etch insulating film underneath the resist film so as to form a field insulating film.
Claim 25
Independent Claim
31 words
A method of manufacturing a semiconductor device according to any one of claims 1 to 3 or 4 to 13 and 16, wherein said etching-proof film is made of a metal.
Claim 26
Dependent Claim
16 words
A method of manufacturing a semiconductor device according to claim 24, wherein said metal is aluminum.
Claim 27
Independent Claim
29 words
A method of maufacturing a semiconductor device according to any one of claims 1 to 3 or 4 to 9, wherein said etching-proof film is made of metal silicide.
Claim 28
Independent Claim
49 words
A method of manufacturing a semiconductor device according to any one of claims 1 to 3 or 4 to 9, wherein said insulating film is a member of a group consisting of a thermal oxidation film, a CVD-SiO 2 film, a silicon nitride film and an aluminum oxide film.
Claim 29
Independent Claim
25 words
A method according to any one of claims 1 to 3 or 4 to 9, wherein said mask pattern is made of a resist material.
Claim 30
Independent Claim
24 words
A method according to any one of claims 1 to 3 or 4 to 13, wherein said semiconductor substrate comprises an epitaxial growth layer.
Claim 31
Independent Claim
32 words
A method according to any one of claims 1 to 3 or 4 to 13, wherein said semiconductor substrate comprises an insulating substrate and a semiconductor layer provided on the insulating substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-12-23 | 1989-06-24 | 1989-12-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-12-23 | 1993-06-24 | 1993-12-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-12-23 | 1997-06-24 | 1997-12-24 | $7700.00 | Window Closed / Lapsed |