US4377438A
Expired / Lapsed
US
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Method for producing semiconductor device
Assignee: Toshiba Corp
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Filing: 1981-09-22
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Granted: 1983-03-22
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Expires: 2001-09-22
Abstract
Abstract A method for producing a semiconductor device has the steps of forming an insulating film on an uneven surface of a semiconductor body; and dry etching the insulating film by using as an etchant a gas containing carbon-halogen bonds and hydrogen, whereby the surface of said insulating film is smoothed.
Inventors
- 👤 Takahiko Moriya
- 👤 Yoshikazu Hazuki
- 👤 Masahiro Kashiwagi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 00:50
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P95/00; H10P95/06; H10P95/062; H10P95/064
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
89 words
A method for producing a semiconductor device, comprising the step of forming an insulating film on an uneven surface of a semiconductor body having recesses and projections, the insulating film having recesses and projections corresponding to the recesses and projections of the semiconductor body, and the step of dry-etching said insulating film using a gas containing carbon-halogen bonds and hydrogen as an etchant, whereby the projection portions of the insulating film are etched more quickly than the recess portions and the insulating film is provided with a smooth surface.
Claim 2
Independent Claim
89 words
A method for producing a semiconductor device, comprising the step of forming an insulating film on an uneven surface of a semiconductor body having recesses and projections, the insulating film having recesses and projections corresponding to the recesses and projections of the semiconductor body, and the step of dry-etching said insulating film using a gas containing carbon-halogen bonds and hydrogen as an etchant, whereby the projection portions of the insulating film are etched more quickly than the recess portions and the insulating film is provided with a smooth surface.
Claim 3
Dependent Claim
14 words
A method according to claim 1, wherein said dry etching is reactive ion etching.
Claim 4
Dependent Claim
46 words
A method according to claim 1, wherein said gas containing carbon-halogen bonds and hydrogen is a gas mixture of CF 4 , C 2 F 6 , C 3 F 8 , CCl 4 or CF 3 Br and H 2 ; or CHF 3 gas.
Claim 5
Dependent Claim
62 words
A method according to claim 1, wherein said gas containing carbon-halogen bonds and hydrogen is a gas mixture of CF 4 , C 2 F 6 , C 3 F 8 , CCl 4 or CF 3 Br and H 2 in which the volume of H 2 is 20 to 40 volume % of the total volume of said gas mixture.
Claim 6
Dependent Claim
15 words
A method according to claim 3, wherein said insulating film is a silicon nitride film.
Claim 7
Dependent Claim
33 words
A method according to claim 1, wherein said gas containing carbon-halogen bonds and hydrogen is a gas mixture of CF 4 and H 2 , said insulating film being a silicon nitride film.
Claim 8
Dependent Claim
35 words
A method according to claim 1, wherein said gas containing carbon-halogen bonds and hydrogen is a gas mixture of C 3 F 8 and H 2 , said insulating film being a silicon oxide film.
Claim 9
Dependent Claim
87 words
A method according to claim 1, further comprising the steps of forming a first insulating film other than a silicon nitride film on said uneven surface of said semiconductor body; forming a silicon nitride film as a second insulating film; smoothing said silicon nitride film; and etching away all of said second insulating film and the surface of said first insulating film by an etching method in which the etching rate for said first insulating film is substantially the same as that for said second insulation film.
Claim 10
Dependent Claim
16 words
A method according to claim 8, wherein said first insulating film is a silicon oxide film.
Claim 11
Dependent Claim
35 words
A method according to claim 8, wherein said etching method in which the etching rate for said first insulating film is substantially the same as that for said second insulating film is reactive ion etching.
Claim 12
Independent Claim
75 words
A method for producing a semiconductor device, comprising the step of forming an insulating film on an uneven surface of a semiconductor body having recesses and projections, and the step of applying reactive ion etching to the insulating film, thus depositing polymer in the recesses of the insulating film, whereby the projection portions of the insulating film are etched more quickly than the recess portions and the insulating film is provided with a smooth surface.
Claim 13
Independent Claim
75 words
A method for producing a semiconductor device, comprising the step of forming an insulating film on an uneven surface of a semiconductor body having recesses and projections, and the step of applying reactive ion etching to the insulating film, thus depositing polymer in the recesses of the insulating film, whereby the projection portions of the insulating film are etched more quickly than the recess portions and the insulating film is provided with a smooth surface.
Claim 14
Dependent Claim
25 words
A method according to claim 1, wherein said dry etching is performed until the top surfaces of the projections of the semiconductor body are exposed.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-03-21 | 1986-09-20 | 1987-03-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-03-21 | 1990-09-20 | 1991-03-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-03-21 | 1994-09-20 | 1995-03-22 | $7700.00 | Window Closed / Lapsed |