Dry etching of copper patterns

Claim 2

A process for forming a copper based metal pattern comprising depositing on a copper surface a composite mask formed by sequentially depositing of a diffusion barrier layer of molybdenum and an overlying layer selected from the group consisting of magnesium oxide (MgO) and aluminum oxide (Al 2 O 3 ) extending in a pattern corresponding to the desired configuration of said copper pattern, with openings exposing complementary portions of said copper surface, dry etch removal of said complementary portions of said copper through said mask openings, and removing said composite mask.

Claim 3

The process of claim 1 wherein said exposed copper portions are removed by reactive ion etching.

Claim 4

The process of claim 1 wherein said copper is formed as a film on the surface of a glass-ceramic structure.

Claim 5

The process of claim 3 wherein said exposed copper surface portions are removed by dry etching.

Claim 6

The process of claim 3 wherein said exposed copper portions are removed by reactive ion etching.

Claim 7

The process of claim 5 wherein said etching is effected in a CCl 4 /Ar atmosphere.

Claim 8

The process of claim 3 including the formation of an adhesion promoting film between said copper and said glass-ceramic surface.

Claim 9

The process of claim 7 wherein said adhesion promoting film comprises titanium.

Claim 10

The process of claim 8 wherein said exposed copper portions are removed by reactive ion etching.

Claim 11

The process of claim 9 wherein said etching is effected in a CCl 4 /Ar atmosphere.

Claim 12

A process for forming a patterned copper metallization on a substrate, comprising: (A) blanket coating said substrate with a copper film; (B) forming a lift-off mask on said copper film, with said mask having opening corresponding to the desired copper pattern; (C) blanket depositing a diffusion barrier film of molybdenum on the portions of said copper film exposed by said lift-off mask opening as a component of a composite dry etch mask; (D) blanket depositing a second film, selected from the group consisting of MgO and Al 2 O 3 on said molybdenum film through said mask openings as a second component of a composite dry etch mask; (E) removing said lift-off mask to retain the deposited said film components of said composite dry etch mask extending in a configuration corresponding to said copper pattern while exposing complementary portions of said copper film; (F) dry etching said complementary of said copper film in a plasma ambient, and (G) removing the said film components of said composite dry etch mask.

Claim 13

A process for forming a patterned copper metallization on a substrate, comprising: (A) blanket coating said substrate with a copper film; (B) forming a lift-off mask on said copper film, with said mask having opening corresponding to the desired copper pattern; (C) blanket depositing a diffusion barrier film of molybdenum on the portions of said copper film exposed by said lift-off mask opening as a component of a composite dry etch mask; (D) blanket depositing a second film, selected from the group consisting of MgO and Al 2 O 3 on said molybdenum film through said mask openings as a second component of a composite dry etch mask; (E) removing said lift-off mask to retain the deposited said film components of said composite dry etch mask extending in a configuration corresponding to said copper pattern while exposing complementary portions of said copper film; (F) dry etching said complementary of said copper film in a plasma ambient, and (G) removing the said film components of said composite dry etch mask.

Claim 14

The process of claim 11 wherein said plasma ambient is comprised of CCl 4 and Ar.

Claim 15

The process of claim 11 wherein said dry etching comprises reactive ion etching.

Claim 16

The process of claim 13 wherein said plasma ambient is comprised of CCl 4 and Ar.

Claim 17

The process of claim 11 wherein said substrate comprises a glass-ceramic structure.

Claim 18

The process of claim 15 wherein said plasma ambient is comprised of CCl 4 and Ar.

Claim 19

The process of claim 15 wherein said dry etching comprises reactive ion etching.

Claim 20

The process of claim 17 wherein said plasma ambient is comprised of CCl 4 and Ar.

Claim 21

The process of claim 15 including the deposition of a blanket coating of titanium adhesion promoting layer between said copper film and said glass ceramic structure.

Claim 22

The process of claim 19 wherein said plasma ambient is comprised of CCl 4 and Ar.

Claim 23

The process of claim 19 wherein said dry etching comprises reactive ion etching.

Claim 24

The process of claim 21 wherein said plasma ambient is comprised of CCl 4 and Ar.

Claim 25

A process for forming a patterned copper metallization on a substrate comprising: (A) blanket coating said substrate with a copper first film, (B) blanket coating said copper film with a diffusion barrier molybdenum second film, (C) blanket coating second film with a third film selected from the group consisting of MgO and Al 2 O 3 films, (D) blanket coating said film with a resist fourth film, (E) lithographically forming a mask from said resist having a pattern of openings complementary to the desired copper pattern, (F) removing the portions of said MgO film and the underlying portions of said Mo film in said openings to expose the underlying portions of said copper film, (G) removing the remaining portions of said resist of said mask to retain a composite mask of said Mo and MgO films, extending in a configuration corresponding to said copper pattern, (H) dry etching said exposed portions of said copper film in a plasma ambient through said openings of said composite mask, and (I) removing the remaining MgO and Mo film portions of said composite mask.

Claim 26

A process for forming a patterned copper metallization on a substrate comprising: (A) blanket coating said substrate with a copper first film, (B) blanket coating said copper film with a diffusion barrier molybdenum second film, (C) blanket coating second film with a third film selected from the group consisting of MgO and Al 2 O 3 films, (D) blanket coating said film with a resist fourth film, (E) lithographically forming a mask from said resist having a pattern of openings complementary to the desired copper pattern, (F) removing the portions of said MgO film and the underlying portions of said Mo film in said openings to expose the underlying portions of said copper film, (G) removing the remaining portions of said resist of said mask to retain a composite mask of said Mo and MgO films, extending in a configuration corresponding to said copper pattern, (H) dry etching said exposed portions of said copper film in a plasma ambient through said openings of said composite mask, and (I) removing the remaining MgO and Mo film portions of said composite mask.

Claim 27

The process of claim 23 wherein said plasma ambient is comprised of CCl 4 and Ar.

Claim 28

The process of claim 23 wherein said dry etching comprises reactive ion etching.

Claim 29

The process of claim 25 wherein said plasma ambient is comprised of CCl 4 and Ar.

Claim 30

The process of claim 23 wherein said substrate comprises a glass-ceramic structure.

Claim 31

The process of claim 27 wherein said plasma ambient is comprised of CCl 4 and Ar.

Claim 32

The process of claim 27 wherein said dry etching comprises reactive ion etching.

Claim 33

The process of claim 29 wherein said plasma ambient is comprised of CCl 4 and Ar.

Claim 34

The process of claim 27 including the deposition of a blanket coating of titanium adhesion promoting layer between said copper film and said glass ceramic structure.

Claim 35

The process of claim 31 wherein said plasma ambient is comprised of CCl 4 and Ar.

Claim 36

The process of claim 31 wherein said dry etching comprises reactive ion etching.

Claim 37

The process of claim 33 wherein said plasma ambient is comprised of CCl 4 and Ar.