US4132586A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Selective dry etching of substrates
Assignee: International Business Machines Corp
•
Filing: 1977-12-20
•
Granted: 1979-01-02
•
Expires: 1997-12-20
Abstract
Abstract Magnesium oxide is deposited on a substrate as a mask with a pattern of openings which exposes a corresponding pattern of a surface of a substrate which is to be subjected to dry etching.
Inventors
- 👤 Paul M. Schaible
- 👤 Geraldine C. Schwartz
- 👤 Laura B. Zielinski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 20:40
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/63; H10P14/6326; H10P14/6328; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P76/00; H10P76/20; H10P76/202; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
42 words
A process for selective removal of material from a substrate comprising: forming a superimposed mask of magnesium oxide on a surface of a substrate exposing discrete areas of said surface, and removing material from said masked substrate at said exposed discrete areas.
Claim 2
Dependent Claim
42 words
A process for selective removal of material from a substrate comprising: forming a superimposed mask of magnesium oxide on a surface of a substrate exposing discrete areas of said surface, and removing material from said masked substrate at said exposed discrete areas.
Claim 3
Dependent Claim
13 words
The process of claim 1 wherein said material is removed by dry etching.
Claim 4
Dependent Claim
14 words
The process of claim 1 wherein said material is removed by reactive ion etching.
Claim 5
Dependent Claim
12 words
The process of claim 1 wherein said substrate comprises a semiconductor wafer.
Claim 6
Dependent Claim
13 words
The process of claim 4 wherein said material is removed by dry etching.
Claim 7
Dependent Claim
14 words
The process of claim 4 wherein said material is removed by reactive ion etching.
Claim 8
Dependent Claim
25 words
The process of claim 1 wherein said substrate comprises a silicon layer, a dielectric layer or a conductive metal layer of aluminum and alloys thereof.
Claim 9
Dependent Claim
13 words
The process of claim 7 wherein said material is removed by dry etching.
Claim 10
Dependent Claim
14 words
The process of claim 7 wherein said material is removed by reactive ion etching.
Claim 11
Independent Claim
137 words
A method of forming a conductor pattern on semiconductor devices comprising depositing a film of a conductive metal on a surface of a semiconductor substrate having at least one integrated circuit formed therein; forming on said film a first masking layer of an organic polymeric material having a predetermined pattern of openings therein exposing corresponding portions of said film; depositing a layer of magnesium oxide on said masking layer and on the exposed portion of said metal film; removing said masking layer and the portions of said oxide layer deposited thereon to form a retained mask pattern of said oxide on said film having openings over said metal film complementary to the pattern of openings of said first mask pattern, removing the portions of said metal film exposed by said oxide mask, and removing said oxide mask.
Claim 12
Independent Claim
137 words
A method of forming a conductor pattern on semiconductor devices comprising depositing a film of a conductive metal on a surface of a semiconductor substrate having at least one integrated circuit formed therein; forming on said film a first masking layer of an organic polymeric material having a predetermined pattern of openings therein exposing corresponding portions of said film; depositing a layer of magnesium oxide on said masking layer and on the exposed portion of said metal film; removing said masking layer and the portions of said oxide layer deposited thereon to form a retained mask pattern of said oxide on said film having openings over said metal film complementary to the pattern of openings of said first mask pattern, removing the portions of said metal film exposed by said oxide mask, and removing said oxide mask.
Claim 13
Dependent Claim
18 words
The method of claim 10 wherein the said portions of said metal film are removed by dry etching.
Claim 14
Dependent Claim
19 words
The method of claim 10 wherein the said portions of said metal film are removed by reactive ion etching.
Claim 15
Dependent Claim
63 words
In a process for fabrication of semiconductor devices on a structure comprised of an aluminum layer on an insulating layer over a semiconductor substrate containing at least one integrated circuit therein, the steps comprising defining a desired pattern to be formed in said aluminum layer by a mask of magnesium oxide, and removing exposed portions of said aluminum layer to said insulating layer.
Claim 16
Dependent Claim
63 words
In a process for fabrication of semiconductor devices on a structure comprised of an aluminum layer on an insulating layer over a semiconductor substrate containing at least one integrated circuit therein, the steps comprising defining a desired pattern to be formed in said aluminum layer by a mask of magnesium oxide, and removing exposed portions of said aluminum layer to said insulating layer.
Claim 17
Dependent Claim
16 words
A process as set forth in claim 13 wherein said aluminum is removed by dry etching.
Claim 18
Dependent Claim
17 words
A process as set forth in claim 13 wherein said aluminum is removed by reactive ion etching.
Claim 19
Independent Claim
108 words
A method of forming a conductor pattern on semiconductor devices comprising: depositing a film of a conductive metal on a surface of a semiconductor substrate having at least one integrated circuit formed therein; depositing a layer of magnesium oxide on said film; forming on said oxide layer a masking layer of an organic polymeric material having a predetermined pattern of openings therein exposing corresponding portions of said oxide layer; subtractively etching the exposed portions of said oxide layer to form a corresponding oxide mask; removing the remainder of said polymeric material; removing the portions of said metal film exposed by said oxide mask; and removing said oxide mask.
Claim 20
Independent Claim
108 words
A method of forming a conductor pattern on semiconductor devices comprising: depositing a film of a conductive metal on a surface of a semiconductor substrate having at least one integrated circuit formed therein; depositing a layer of magnesium oxide on said film; forming on said oxide layer a masking layer of an organic polymeric material having a predetermined pattern of openings therein exposing corresponding portions of said oxide layer; subtractively etching the exposed portions of said oxide layer to form a corresponding oxide mask; removing the remainder of said polymeric material; removing the portions of said metal film exposed by said oxide mask; and removing said oxide mask.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-01-01 | 1982-07-03 | 1983-01-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-01-01 | 1986-07-03 | 1987-01-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-01-01 | 1990-07-03 | 1991-01-02 | $7700.00 | Window Closed / Lapsed |