US3794536A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dielectric circuit forming process
Assignee: AT&T Inc
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Filing: 1972-01-31
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Granted: 1974-02-26
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Expires: 1992-01-31
Abstract
Abstract THERE IS DISCLOSED A PROCESS FOR FORMING INTEGRATED OPTICAL CIRCUIT COMPONENTS ON A SUBSTRATE WAFER IN THE FORM OF DIELECTRIC THIN FILMS IN PATTERNS OF HIGH REOSLUTION AND EDGE SMOOTHNESS. FOR HIGH RESOLUTION, THE USE OF ELECTRON-RESIST AND ELECTRON-BEAM EXPOSURE TECHINQUES IS DESCRIBED. PARTICULARLY DISCLOSED IS THE USE OF A MANGANESE MASK FORMED OVER THE CIRCUIT LAYER, THE EXPOSED PORTIONS OF WHICH ARE SPUTTER ETCHED AWAY.
Inventors
- 👤 W Muska
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 20:40
CPC Classifications
G; G03; G03F; G03F7/00; H; H10; H10P; H10P95/00
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-02-25 | 1977-08-27 | 1978-02-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-02-25 | 1981-08-27 | 1982-02-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-02-25 | 1985-08-27 | 1986-02-26 | $7700.00 | Window Closed / Lapsed |