US6348725B2
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US
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Plasma processes for depositing low dielectric constant films
Assignee: Applied Materials Inc
•
Filing: 1999-02-10
•
Granted: 2002-02-19
•
Expires: 2019-02-10
Abstract
Abstract A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, dimethylsilane, (CH3)2SiH2, or 1,1,3,3-tetramethyl-disiloxane, (CH3)2-SiH-O-SiH-(CH3)2, and nitrous oxide, N2O, at a constant RF power level from about 10 W to about 150 W, or a pulsed RF power level from about 20 W to about 250 W during 10% to 30% of the duty cycle.
Inventors
- 👤 David Cheung
- 👤 Wai-Fan Yau
- 👤 Robert P. Mandal
- 👤 Shin-puu Jeng
- 👤 Kuo-Wei Liu
- 👤 Yung-Cheng Lu
- 👤 Michael Barnes
- 👤 Ralf B. Willecke
- 👤 Farhad Moghadam
- 👤 Tetsuya Ishikawa
- 👤 Tze Wing Poon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 02:30
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6516; H10P14/6548; H10P14/66; H10P14/668; H10P14/6681; H10W20/074; H10W20/075; H10W20/077; H10W20/081; H10W20/084; H10W20/085; H10W20/086; H10P14/6336; H10P14/665; H10P14/6682; H10P14/6684; H10P14/6686; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10W20/0886; Y; Y10; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24926; Y10T428/31504; Y10T428/31652; Y10T428/31663
Claims Analysis
Total Claims: 41
Claim 1
Independent Claim
41 words
A dual damascene structure, comprising: a first dielectric layer comprising silicon, oxygen, and carbon, the first dielectric layer defining one or more vertical interconnects; and a second dielectric layer contacting the first dielectric layer and defining one or more horizontal interconnects.
Claim 2
Dependent Claim
41 words
A dual damascene structure, comprising: a first dielectric layer comprising silicon, oxygen, and carbon, the first dielectric layer defining one or more vertical interconnects; and a second dielectric layer contacting the first dielectric layer and defining one or more horizontal interconnects.
Claim 3
Dependent Claim
18 words
The structure of claim 1 , wherein the first and the second dielectric layers have different dielectric constants.
Claim 4
Dependent Claim
19 words
The structure of claim 2 wherein the vertical interconnects and the horizontal interconnects are filled with a conductive material.
Claim 5
Dependent Claim
22 words
The structure of claim 3 , wherein the second dielectric layer comprises a carbon content less than about 10% by atomic weight.
Claim 6
Dependent Claim
14 words
The structure of claim 1 , wherein the first dielectric layer comprises silicon-carbon bonds.
Claim 7
Dependent Claim
14 words
The structure of claim 1 , wherein the second dielectric layer comprises silicon-carbon bonds.
Claim 8
Dependent Claim
20 words
The structure of claim 1 , wherein the first dielectric layer comprises from 20% to 50% carbon by atomic weight.
Claim 9
Dependent Claim
20 words
The structure of claim 7 , wherein the second dielectric, layer comprises from 1% to 10% carbon by atomic weight.
Claim 10
Dependent Claim
23 words
The structure of claim 1 , wherein the first dielectric layer is deposited by plasma enhanced chemical vapor deposition of an organosilicon compound.
Claim 11
Dependent Claim
23 words
The structure of claim 9 , wherein the second dielectric layer is deposited by plasma enhanced chemical vapor deposition of the organosilicon compound.
Claim 12
Dependent Claim
16 words
The structure of claim 9 , wherein the organosilicon compound comprises at least one carbon-hydrogen bond.
Claim 13
Dependent Claim
17 words
The structure of claim 9 , wherein the organosilicon compound consists of carbon, silicon, oxygen, and hydrogen.
Claim 14
Dependent Claim
16 words
The structure of claim 9 , wherein the organosilicon compound consists of carbon, silicon, and hydrogen.
Claim 15
Dependent Claim
43 words
The structure of claim 9 , wherein the organosilicon compound is selected from a group consisting of methylsilane, dimethylsilane, triethylsilane, disilanozethane, bis(methyl-silano)methane, 1,2-disilanoethane, 1,2-bis(methylsilano)ethane, 2,2-disilanopropane, 1,3,5-trisilano-2,4,6-trimethylene, 1,3-dimethyldisiloxane, 1,1,3,3-tetramethyldisiloxane, 1,3-bis(silanomethylene)di-siloxane, bis(1-methyldisiloxanyl)methane, 2,2-bis(1-methyl-disiloxanyl)propane, 2,4,6,8-tetramethylcyclotetrasiloxane, 2,4,6,8,10-pentamethyl-cyclopenta-siloxane, 1,3,5,7-tetrasilano-2,6-dioxy-4,8-dimetylene, 2,4,6-trisilanetetra-hydropyran, 2,5-disilanotetrahydrofuran, fluorinated carbon derivatives thereof, and combinations thereof.
Claim 16
Dependent Claim
54 words
A structure, comprising: a first intermetal dielectric layer defining one or more vertical interconnects, wherein the first intermetal dielectric layer comprises a carbon content greater than about 20% by atomic weight and; a second intermetal dielectric layer contacting the first intermetal dielectric layer, the second intermetal dielectric layer defining one or more horizontal interconnects.
Claim 17
Dependent Claim
54 words
A structure, comprising: a first intermetal dielectric layer defining one or more vertical interconnects, wherein the first intermetal dielectric layer comprises a carbon content greater than about 20% by atomic weight and; a second intermetal dielectric layer contacting the first intermetal dielectric layer, the second intermetal dielectric layer defining one or more horizontal interconnects.
Claim 18
Dependent Claim
14 words
The structure of claim 15 wherein the first intermetal dielectric layer comprises silicon-carbon bonds.
Claim 19
Dependent Claim
20 words
The structure of claim 15 , wherein the vertical interconnects and the horizontal interconnects are filled with a conductive material.
Claim 20
Dependent Claim
22 words
The structure of claim 15 , wherein the second intermetal dielectric layer comprises a carbon content less than 10% by atomic weight.
Claim 21
Dependent Claim
21 words
The structure of claim 15 , wherein the first intermetal dielectric layer comprises from 20% to 50% carbon by atomic weight.
Claim 22
Dependent Claim
21 words
The structure of claim 19 , wherein the second intermetal dielectric layer comprises from 1% to 10% carbon by atomic weight.
Claim 23
Dependent Claim
24 words
The structure of claim 16 , wherein the first intermetal dielectric layer is deposited by plasma enhanced chemical vapor deposition of an organosilicon compound.
Claim 24
Dependent Claim
24 words
The structure of claim 21 , wherein the second intermetal dielectric layer is deposited by plasma enhanced chemical vapor deposition of the organosilicon compound.
Claim 25
Dependent Claim
16 words
The structure of claim 22 , wherein the organosilicon compound comprises at least one carbon-hydrogen bond.
Claim 26
Dependent Claim
17 words
The structure of claim 22 , wherein the organosilicon compound consists of carbon, silicon, oxygen, and hydrogen.
Claim 27
Dependent Claim
16 words
The structure of claim 22 , wherein the organosilicon compound consists of carbon, silicon, and hydrogen.
Claim 28
Dependent Claim
43 words
The structure of claim 22 , wherein the organosilicon compound is selected from a group consisting of methylsilane, dimethylsilane, trimethylsilane, disilanomethane bis(methylsilano)methane, 1,2-disilanoethane, 1,2-bis(methylsilano)ethane, 2,2-disilanopropane, 1,3,5-trisilano-2,4,6-trimethylene, 1,3-diethyldisiloxane, 1,1,3,3-tetramethyldisiloxane, 1,3-bis(silanomethylene)di-siloxane, bis(1-methyldisiloxanyl)methane, 2,2-bis(1-methyldisiloxanyl)propane, 2,4,6,8-tetamethylcyclotetrasiloxane, 2,4,6,10-pentamethyl-cyclopentasiloxane, 1,3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene, 2,4,6-trisilanetetra-hydropyran, 2,5-disilanetetrahyrdofuran, fluorinated carbon derivatives thereof, and combinations thereof.
Claim 29
Dependent Claim
65 words
A dual damascene structure, produced by the process comprising: depositing a first dielectric layer, wherein the first dielectric layer comprises a carbon content greater than about 20% by atomic weight; etching the first dielectric layer to define one or more vertical interconnects; depositing a second dielectric layer contacting the first dielectric layer; and etching the second dielectric layer to define one or more horizontal interconnects.
Claim 30
Dependent Claim
65 words
A dual damascene structure, produced by the process comprising: depositing a first dielectric layer, wherein the first dielectric layer comprises a carbon content greater than about 20% by atomic weight; etching the first dielectric layer to define one or more vertical interconnects; depositing a second dielectric layer contacting the first dielectric layer; and etching the second dielectric layer to define one or more horizontal interconnects.
Claim 31
Dependent Claim
14 words
The structure of claim 27 , wherein the first dielectric layer comprises silicon-carbon bonds.
Claim 32
Dependent Claim
20 words
The structure of claim 27 , wherein the vertical interconnects and the horizontal interconnects are filled with a conductive material.
Claim 33
Dependent Claim
21 words
The structure of claim 27 , wherein the second dielectric layer comprises a carbon content less than 10% by atomic weight.
Claim 34
Dependent Claim
20 words
The structure of claim 27 , wherein the first dielectric layer comprises from 20% to 50% carbon by atomic weight.
Claim 35
Dependent Claim
20 words
The structure of claim 31 , wherein the second dielectric layer comprises from 1% to 10% carbon by atomic weight.
Claim 36
Dependent Claim
23 words
The structure of claim 28 , wherein the first dielectric layer is deposited by plasma enhanced chemical vapor deposition of an organosilicon compound.
Claim 37
Dependent Claim
23 words
The structure of claim 33 , wherein the second dielectric layer is deposited by plasma enhanced chemical vapor deposition of the organosilicon compound.
Claim 38
Dependent Claim
16 words
The structure of claim 34 , wherein the organosilicon compound comprises at least one carbon-hydrogen bond.
Claim 39
Dependent Claim
17 words
The structure of claim 34 , wherein the organosilicon compound consists of carbon, silicon, oxygen, and hydrogen.
Claim 40
Dependent Claim
16 words
The structure of claim 34 , wherein the organosilicon compound consists of carbon, silicon, and hydrogen.
Claim 41
Dependent Claim
43 words
The structure of claim 34 , wherein the organosilicon compound is selected from a group consisting of methylsilane, dimethylsilane, trimethylsilane, disilanomethane, bis(methylsilano)methane, 1,2-disilanoethane, 1,2-bis(methylsilano)ethane, 2,2-disilanopropane, 1,3,5-trisilano-2,4,6-trimethylene, 1,3-dimethyldisiloxane, 1,1,3,3-tetramethyldisiloxane, 1,3-bis(silanomethylene)di-siloxane, bis(1-methyldisiloxanyl)methane, 2,2-bis(1-methyldisiloxanyl)propane, 2,4,6,8-tetamethylcyclotetrasiloxane, 2,4,6,8,10-pentamethyl-cyclopentasiloxane, 1,3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene, 2,4,6-trisilanetetra-hydropyran, 2,5-disilanetetrahydrofuran, fluorinated carbon derivatives thereof, and combinations thereof.
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