US4168330A
Expired / Lapsed
US
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Method of depositing a silicon oxide layer
Assignee: RCA Corp
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Filing: 1977-10-13
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Granted: 1979-09-18
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Expires: 1997-10-13
Abstract
Abstract This invention pertains to a method of depositing a silicon oxide, such as silicon dioxide, layer on a substrate by utilizing a glow discharge in oxygen and a dielectric precursor having the formula <IMAGE> wherein x is an integer of 1 to 4 and each R is independently selected from the group consisting of H, -CH3, and -C2H5.
Inventors
- 👤 Grzegorz Kaganowicz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 11:09
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; Y; Y10; Y10S; Y10S148/00; Y10S148/118
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
109 words
In a method of depositing a silicon oxide layer on a substrate comprising evacuating a chamber, introducing the substrate into the chamber, introducing oxygen and a dielectric precursor into the chamber, and activating the precursor around the substrate by means of a glow discharge whereby a silicon oxide dielectric layer is deposited wherein the improvement comprises employing as the dielectric precursor a compound which has the formula ##STR8## wherein x is an integer of 1 to 4 and each R is independently selected from the group consisting of H, --CH 3 and --C 2 H 5 and employing a dielectric precursor partial pressure of below 12 micrometers of Hg.
Claim 2
Dependent Claim
109 words
In a method of depositing a silicon oxide layer on a substrate comprising evacuating a chamber, introducing the substrate into the chamber, introducing oxygen and a dielectric precursor into the chamber, and activating the precursor around the substrate by means of a glow discharge whereby a silicon oxide dielectric layer is deposited wherein the improvement comprises employing as the dielectric precursor a compound which has the formula ##STR8## wherein x is an integer of 1 to 4 and each R is independently selected from the group consisting of H, --CH 3 and --C 2 H 5 and employing a dielectric precursor partial pressure of below 12 micrometers of Hg.
Claim 3
Dependent Claim
13 words
A method according to claim 1 wherein the silicon oxide is silicon dioxide.
Claim 4
Dependent Claim
13 words
A method according to claim 1 wherein the substrate has a conductive surface.
Claim 5
Dependent Claim
33 words
A method according to claim 1 wherein the ratio of the partial pressure of the oxygen to the partial pressure of the precursor in the chamber is greater than about 1.5 to 1.
Claim 6
Dependent Claim
30 words
A method according to claim 1 wherein the ratio of the partial pressure of the oxygen to the partial pressure of the precursor is greater than about 2 to 1.
Claim 7
Dependent Claim
22 words
A method according to claim 1 wherein the dielectric precursor is selected from the group consisting of 1,3,5,7-tetramethylcyclotetra siloxane and octamethylcyclotetra siloxane.
Claim 8
Dependent Claim
21 words
A method according to claim 1 wherein the deposited silicon oxide film is from about 50 to about 250 angstroms thick.
References Cited (Backward Citations)
US3424661A
Cited
US3473759A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-09-17 | 1983-03-19 | 1983-09-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-09-17 | 1987-03-19 | 1987-09-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-09-17 | 1991-03-19 | 1991-09-18 | $7700.00 | Window Closed / Lapsed |