EP0519079A1
Expired / Lapsed
EP
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Process for forming silicon oxide film
Assignee: Fujitsu VLSI Ltd
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Filing: 1991-12-19
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Granted: —
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Expires: 2011-12-19
Abstract
Abstract A process for forming a silicon oxide film comprising the step of depositing a thin film of a silanol, a polymer thereof or a siloxane polymer, each containing an organic group, on a substrate by exciting a gas containing an organosilane or organosiloxane gas and a gas containing H and OH on a substrate in a reaction chamber to cause a reaction in a gas phase or on the substrate and the step of removing the organic group from the thin film by plasma treatment. Preferably the thin film is formed by repeating the depositing step and the removing step in the same chamber and is heat treated at a temperature of 450 °C or below. This process provides a good insulation film having a flatness comparable to that of an SOG film.
Inventors
- 👤 Atsuhiro Tsukune
- 👤 Yuji Furumura
- 👤 Masanobu Hatanaka
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 22:24
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6532; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
83 words
A process for the formation of a silicon oxide film, comprising the steps of: exciting a gas comprising an organosilane or organosiloxane gas and a gas containing H and OH above a substrate in a reaction chamber to react them with each other in a gaseous phase or on the substrate, thereby depositing a thin film of an organic-group-containing silanol, silanol polymer, or siloxane-bonded polymer on the substrate and removing the organic groups from the thin film to obtain a silicon oxide film.
Claim 2
Dependent Claim
33 words
A process according to claim 1, wherein said organosilane or organosiloxane is at least one member selected from the group consisting of tetraethoxysilane, tetramethoxysilane, tetramethylsilane, tetramethylcyclotetrasiloxane, octomethylcyclotetrasiloxane, diacetoxy-di-tert-butoxysilane, hexamethyldisiloxane, and their substituted compounds.
Claim 3
Dependent Claim
19 words
A process according to claim 1, wherein said gas containing H and OH is water vapor or hydrogen peroxide.
Claim 4
Dependent Claim
25 words
A process according to claim 1, wherein said thin film contains 90% by weight or less of the organic groups prior to the heat treatment.
Claim 5
Dependent Claim
25 words
A process according to claim 4, wherein said thin film contains 20 to 60% by weight of the organic groups prior to the heat treatment.
Claim 6
Dependent Claim
25 words
A process according to claim 4, wherein said thin film contains 30% by weight or less of the organic groups prior to the heat treatment.
Claim 7
Dependent Claim
15 words
A process according to claim 1, wherein said excitation is conducted in a pulsing manner.
Claim 8
Dependent Claim
37 words
A process according to claim 6, wherein said excitation time is short to such an extent that the organosilane or organosiloxane gas or its reaction product can still contain the organic group when it reaches the substrate.
Claim 9
Dependent Claim
24 words
A process according to claim 1, wherein said step of deposition is conducted at a temperature in the range of from -50 to 450°C.
Claim 10
Dependent Claim
34 words
A process according to claim 1, wherein the step of removing the organic groups is conducted through the use of a heat treatment at a temperature in the range of from 250 to 850°C.
Claim 11
Dependent Claim
53 words
A process according to claim 9, wherein the step of deposition is conducted at a temperature in the range of from room temperature to 250°C and the step of removing the organic groups is conducted through the use of a heat treatment at a temperature in the range of from 250 to 450°C.
Claim 12
Dependent Claim
26 words
A process according to claim 1, wherein the step of deposition and the step of removing the organic groups are successively conducted without breaking the vacuum.
Claim 13
Dependent Claim
23 words
A process according to claim 11, wherein said thin film is irradiated with ultraviolet rays simultaneously with or subsequent to the heat treatment.
Claim 14
Dependent Claim
50 words
A process according to claim 1, wherein the flow rate ratio of the gas containing H and OH to the organosilane or organosiloxane gas is 1/10 to 50 times the stoichiometric molar ratio necessary for completely hydrolyzing or oxidizing the organosilane or organosiloxane with the gas containing H and OH.
Claim 15
Dependent Claim
23 words
A process according to claim 1, wherein the step of removing the organic groups comprises subjecting the thin film to a plasma treatment.
Claim 16
Dependent Claim
24 words
A process according to claim 15, wherein said plasma treatment is conducted at a temperature in the range of from room temperature to 450°C.
Claim 17
Dependent Claim
38 words
A process according to claim 16, wherein a silicon oxide film having a desired film thickness is formed on the substrate by alternatively repeating the step of deposition and the step of plasma treatment in an identical chamber.
Claim 18
Dependent Claim
28 words
A process according to claim 16, wherein said plasma treatment is conducted by means of oxygen, hydrogen, or water plasma and the substrate temperature is 100 to 250°C.
Claim 19
Dependent Claim
27 words
A process according to claim 18, wherein after the steps of deposition and plasma treatment, the heat treatment is conducted at a temperature of 250 to 450°C.
Claim 20
Dependent Claim
34 words
A process according to claim 17, wherein the step of deposition and the step of plasma treatment are alternately conducted by intermittently stopping the supply of the organosilane or organosiloxane to the reaction chamber.
Claim 21
Dependent Claim
15 words
A process according to claim 17, wherein said excitation is conducted in a pulsing manner.
Claim 22
Dependent Claim
54 words
A process according to claim 1, wherein at least one member selected from a phosphorus source, a boron source, and an arsenic source is introduced together with the organosilane or organosiloxane and the gas containing H and OH to incorporate at least one member selected from phosphorus, boron, and arsenic into the thin film.
Claim 23
Dependent Claim
33 words
A process according to claim 1, wherein a gas containing nitrogen is introduced together with the organosilane or organosiloxane and the gas containing H and OH to incorporate nitrogen into the thin film.
Claim 24
Dependent Claim
29 words
A process according to claim 1, wherein oxygen gas is further continuously or intermittently introduced into the organosilane gas or organosiloxane gas and the gas containing H and OH.
Claim 25
Dependent Claim
163 words
A process according to claim 1, wherein said deposition is conducted through the use of a planar-type plasma CVD system under conditions of a pressure of 5 to 15 Torr, a temperature of room temperature to 250°C, a distance between electrodes of 6 to 25 mm, a gas flow rate of 100 to 18000 cm³/min, an RF (discharge) frequency of 13.56 MHz, a pulse period of 100 times the time taken for the reaction gas to pass through between electrodes of the parallel plates, a discharge power of 100 to 500W, a discharge "on" time satisfying a requirement represented by the formula wherein D represents the length of a discharge "on" time in terms of % by assuming a time taken for a gas to reach the substrate after the introduction thereof into the plasma region to be 100 with the upper limit of the discharge "on" time being 100%, P represents an RF powder, and T represents the temperature of the substrate.
Claim 26
Dependent Claim
23 words
A process according to claim 1, wherein said silicon oxide film is a layer insulation film for multilayer interconnection of a semiconductor device.
References Cited (Backward Citations)
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