US5250473A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of providing silicon dioxide layer on a substrate by means of chemical reaction from the vapor phase at a low pressure (LPCVD)
Assignee: US Philips Corp
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Filing: 1991-08-02
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Granted: 1993-10-05
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Expires: 2011-08-02
Abstract
Abstract A LPCVD-process for SiO 2 -layers at a deposition temperature between 420° C. and 500° C., using a silane compound in which only one H and one Cl-atom is bonded to the Si-atom yields a very satisfactory uniformity of the layer thickness. An example of such a silane compound is dimethyl monochlorosilane.
Inventors
- 👤 Jacobus W. M. Smits
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:26
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
81 words
A method of providing silicon dioxide layer having a substantially uniform thickness at an improved deposition rate on a substrate by means of chemical vapor deposition at a low pressure (LPCVD) from a mixture comprising an oxidizing agent and a chlorosilane, wherein the chlorosilane is a monochlorosilane of the formula R 1 R 2 SiHCl, where R 1 and R 2 represent an alkyl group and wherein the silicon dioxide layer may be deposited on various substrates including substrates comprising aluminum.
Claim 2
Independent Claim
81 words
A method of providing silicon dioxide layer having a substantially uniform thickness at an improved deposition rate on a substrate by means of chemical vapor deposition at a low pressure (LPCVD) from a mixture comprising an oxidizing agent and a chlorosilane, wherein the chlorosilane is a monochlorosilane of the formula R 1 R 2 SiHCl, where R 1 and R 2 represent an alkyl group and wherein the silicon dioxide layer may be deposited on various substrates including substrates comprising aluminum.
Claim 3
Dependent Claim
15 words
A method as claimed in claim 1, wherein dimethyl monochlorosilane is used as the monochlorosilane.
Claim 4
Dependent Claim
22 words
A method as claimed in claim 1, wherein the silicon dioxide layer is provided at a temperature between 420° and 500° C.
Claim 5
Dependent Claim
15 words
A method as claimed in claim 3, wherein a temperature of 430° C. is used.
Claim 6
Dependent Claim
21 words
A method as claimed in claim 4, wherein the silicon dioxide layer is applied at an overall pressure of 1.3 mbar.
Claim 7
Dependent Claim
28 words
A method of manufacturing a semiconductor device which comprises a silicon dioxide layer, wherein the silicon dioxide layer is manufactured by a method as claimed in claim 1.
Claim 8
Dependent Claim
22 words
A method as claimed in claim 2, wherein the silicon dioxide layer is provided at a temperature between 420° and 500° C.
Claim 9
Dependent Claim
28 words
A method of manufacturing a semiconductor device which comprises a silicon dioxide layer, wherein the silicon dioxide layer is manufactured by a method as claimed in claim 2.
Claim 10
Dependent Claim
28 words
A method of manufacturing a semiconductor device which comprises a silicon dioxide layer, wherein the silicon dioxide layer is manufactured by a method as claimed in claim 3.
Claim 11
Dependent Claim
28 words
A method of manufacturing a semiconductor device which comprises a silicon dioxide layer, wherein the silicon dioxide layer is manufactured by a method as claimed in claim 4.
Claim 12
Dependent Claim
28 words
A method of manufacturing a semiconductor device which comprises a silicon dioxide layer, wherein the silicon dioxide layer is manufactured by a method as claimed in claim 5.
Claim 13
Dependent Claim
28 words
A method of manufacturing a semiconductor device which comprises a silicon dioxide layer, wherein the silicon dioxide layer is manufactured by a method as claimed in claim 7.
References Cited (Backward Citations)
US4810673A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-10-04 | 1997-04-05 | 1997-10-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-10-04 | 2001-04-05 | 2001-10-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-10-04 | 2005-04-05 | 2005-10-05 | $7700.00 | Window Closed / Lapsed |