US4810673A
Expired / Lapsed
US
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Oxide deposition method
Assignee: Texas Instruments Inc
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Filing: 1986-09-18
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Granted: 1989-03-07
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Expires: 2006-09-18
Abstract
Abstract Silicon dioxide is deposited by low pressure chemical vapor deposition (LPCVD) from dichlorosilane plus nitrous oxide, using a larger concentration of dichlorosilane than of nitrous oxide.
Inventors
- 👤 Dean W. Freeman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:35
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/01; H10D1/045; H10D1/047; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; Y; Y10; Y10S; Y10S148/00; Y10S148/027; Y10S148/118
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
81 words
A method for depositing a thin film of silicon oxides, comprising the steps of: (a) providing a substrate on which the thin film of oxides is to be deposited; (b) heating said substrate to a temperature in the range between 700° C. and 950° C.; (c) passing a gas flow over said substrate, said gas flow including a silicon bearing component and an oxidizing component, wherein the atomic ratio of silicon to oxygen in said gas flow is greater than one.
Claim 2
Independent Claim
81 words
A method for depositing a thin film of silicon oxides, comprising the steps of: (a) providing a substrate on which the thin film of oxides is to be deposited; (b) heating said substrate to a temperature in the range between 700° C. and 950° C.; (c) passing a gas flow over said substrate, said gas flow including a silicon bearing component and an oxidizing component, wherein the atomic ratio of silicon to oxygen in said gas flow is greater than one.
Claim 3
Dependent Claim
23 words
The method of claim 1, wherein said substrate is heated to a temperature in the range between 850° C. and 900° C. inclusive.
Claim 4
Dependent Claim
17 words
The method of claim 1, wherein said gas flow has a total pressure less than 1500 milliTorr.
Claim 5
Dependent Claim
23 words
The method of claim 1, wherein said gas flow has a total pressure in the range between 150 milliTorr and 1500 milliTorr inclusive.
Claim 6
Dependent Claim
14 words
The method of claim 1, wherein said oxidizing component consists essentially of nitrous oxide.
Claim 7
Dependent Claim
18 words
The method of claim 1, wherein said silicon bearing component consists essentially of one or more halated silanes.
Claim 8
Dependent Claim
20 words
The method of claim 1, wherein said silicon bearing component is selected from the group consisting of dichlorosilane and trichlorosilane.
Claim 9
Dependent Claim
14 words
The method of claim 1, wherein said silicon bearing component consists essentially of dichlorosilane.
Claim 10
Dependent Claim
26 words
The method of claim 1, wherein said substrate is heated in a furnace having a thermal gradient in the neighborhood of 10 degrees C. per meter.
Claim 11
Dependent Claim
46 words
The method of claim 1, wherein said silicon bearing component is flowed at a rate between 10 and 100 standard cubic centimeters per minute (sccm), and said oxidizing component is flowed at a rate which is smaller than the flow rate of said silicon bearing component.
Claim 12
Independent Claim
110 words
A method for depositing a thin film of silicon oxides, comprising the steps of: (a) providing a substrate on which the thin film of oxides is to be deposited; (b) heating said substrate to a temperature in the range between 725° C. and 950° C. inclusive; (c) passing a gas flow over said substrate at a total pressure less than 1000 milliTorr, said gas flow including a silicon bearing component and an oxidizing component (said silicon bearing component consisting essentially of one or more chlorinated silanes), wherein the atomic ratio of available silicon atoms in said gas flow to available oxygen atoms in said gas flow is greater than one.
Claim 13
Independent Claim
110 words
A method for depositing a thin film of silicon oxides, comprising the steps of: (a) providing a substrate on which the thin film of oxides is to be deposited; (b) heating said substrate to a temperature in the range between 725° C. and 950° C. inclusive; (c) passing a gas flow over said substrate at a total pressure less than 1000 milliTorr, said gas flow including a silicon bearing component and an oxidizing component (said silicon bearing component consisting essentially of one or more chlorinated silanes), wherein the atomic ratio of available silicon atoms in said gas flow to available oxygen atoms in said gas flow is greater than one.
Claim 14
Dependent Claim
23 words
The method of claim 11, wherein said gas flow has a total pressure in the range between 150 milliTorr and 1000 milliTorr inclusive.
Claim 15
Dependent Claim
14 words
The method of claim 11, wherein said oxidizing component consists essentially of nitrous oxide.
Claim 16
Dependent Claim
33 words
The method of claim 11, wherein said oxidizing component consists essentially of nitrous oxide, and wherein said silicon bearing component is selected from the group consisting of monochlorosilane, dichlorosilane, trichlorosilane, and mixtures thereof.
Claim 17
Dependent Claim
20 words
The method of claim 11, wherein said silicon bearing component is selected from the group consisting of dichlorosilane and trichlorosilane.
Claim 18
Dependent Claim
25 words
The method of claim 11, wherein said silicon bearing component consists essentially of dichlorosilane, and said oxidizing component consists essentially of an oxide of nitrogen.
Claim 19
Independent Claim
98 words
A method for depositing a thin film of silicon oxides, comprising the steps of: (a) providing a substrate on which the thin film of oxides is to be deposited: (b) heating said substrate to a temperature in the range between 700° C. and 900° C. inclusive; (c) passing a gas flow over said substrate at a total pressure less than 1000 milliTorr, said gas flow including a chlorosilane and nitrous oxide, said chlorosilane being selected from the group consisting of dichlorosilane, trichlorosilane, and mixtures thereof, wherein said chlorosilane is flowed at a greater volume than said nitrous oxide.
Claim 20
Independent Claim
98 words
A method for depositing a thin film of silicon oxides, comprising the steps of: (a) providing a substrate on which the thin film of oxides is to be deposited: (b) heating said substrate to a temperature in the range between 700° C. and 900° C. inclusive; (c) passing a gas flow over said substrate at a total pressure less than 1000 milliTorr, said gas flow including a chlorosilane and nitrous oxide, said chlorosilane being selected from the group consisting of dichlorosilane, trichlorosilane, and mixtures thereof, wherein said chlorosilane is flowed at a greater volume than said nitrous oxide.
Claim 21
Dependent Claim
23 words
The method of claim 17, wherein said gas flow has a total pressure in the range between 150 milliTorr and 1500 milliTorr inclusive.
Claim 22
Independent Claim
112 words
A method for fabricating trench capacitors, comprising the steps of: (a) providing a substrate having a semiconducting upper portion; (b) etching into said substrate a trench having a depth more than four times its width; (c) depositing an oxide on the sidewalls of said trench, said oxide being deposited by heating said substrate to a temperature between 700° C. and 950° C., and passing over said substrate at low pressure a gas mixture including halosilanes and an oxygen source, and including a larger atomic fraction of silicon than of oxygen; (d) and depositing a conductive material into said trench to define a capacitor plate which is insulated with respect to said substrate.
Claim 23
Independent Claim
112 words
A method for fabricating trench capacitors, comprising the steps of: (a) providing a substrate having a semiconducting upper portion; (b) etching into said substrate a trench having a depth more than four times its width; (c) depositing an oxide on the sidewalls of said trench, said oxide being deposited by heating said substrate to a temperature between 700° C. and 950° C., and passing over said substrate at low pressure a gas mixture including halosilanes and an oxygen source, and including a larger atomic fraction of silicon than of oxygen; (d) and depositing a conductive material into said trench to define a capacitor plate which is insulated with respect to said substrate.
Claim 24
Dependent Claim
14 words
The method of claim 19, wherein said conductive material consists essentially of polycrystalline silicon.
Claim 25
Dependent Claim
37 words
The method of claim 19, wherein said substrate is an epitaxial structure, and the portion of said substrate next to the bottom of said trench is doped to a concentration of greater than 1E17 cm -3 .
Claim 26
Dependent Claim
21 words
The method of claim 21, wherein said portion of said substrate next to the bottom of said trench is doped p-type.
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