Abstract According to the method of manufacturing a semiconductor device having a multilayer interconnection structure, lower wires are formed on a semiconductor substrate. Then, a first reflow SiO 2 film having a reflow form is formed on the semiconductor substrate and the lower wires by reacting SiH 4 gas with H 2 O 2 in a vacuum at 650 Pa or less within a range from -10 to 10°C. After the first reflow SiO 2 film is formed, heat treatment is performed at a predetermined high temperature on the semiconductor substrate on which the first reflow SiO 2 film, and a second reflow SiO 2 film having a reflow form is formed on the semiconductor substrate and the lower wires by reacting SiH 4 gas with H 2 O 2 in a vacuum at 650 Pa or less within a range from -10 to 10°C. The heat treatment step performed after the first reflow SiO 2 film forming step and the second reflow SiO 2 film forming step subsequent thereto are respectively performed at least once. After the abovementioned steps are finished, upper wires are formed on the second reflow SiO 2 film.
A method of manufacturing a semiconductor device having a multilayer interconnection structure comprising the steps of: forming lower wires on a semiconductor substrate; forming a first reflow SiCO 2 film having a reflow form on the semiconductor substrate and the lower wires by reacting SiH 4 gas with H 2 O 2 in a vacuum at 650 Pa or less and at a temperature within a range from -10° to 10° C.; performing a heat treatment at a high temperature on the semiconductor substrate and said first reflow SiO 2 film; forming a second reflow SiO 2 film having a reflow form on the first reflow SiO 2 film by reacting SiH 4 gas with H 2 O 2 in a vacuum at 650 Pa or less and at a temperature within a range from -10° to 10° C., said heat treatment step performed after the first reflow SiO 2 film forming step and the second reflow SiO 2 film forming step subsequent thereto being respectively performed at least once: and forming upper wires on the second reflow SiO 2 film.
Claim 2
Independent Claim
181 words
A method of manufacturing a semiconductor device having a multilayer interconnection structure comprising the steps of: forming lower wires on a semiconductor substrate; forming a first reflow SiCO 2 film having a reflow form on the semiconductor substrate and the lower wires by reacting SiH 4 gas with H 2 O 2 in a vacuum at 650 Pa or less and at a temperature within a range from -10° to 10° C.; performing a heat treatment at a high temperature on the semiconductor substrate and said first reflow SiO 2 film; forming a second reflow SiO 2 film having a reflow form on the first reflow SiO 2 film by reacting SiH 4 gas with H 2 O 2 in a vacuum at 650 Pa or less and at a temperature within a range from -10° to 10° C., said heat treatment step performed after the first reflow SiO 2 film forming step and the second reflow SiO 2 film forming step subsequent thereto being respectively performed at least once: and forming upper wires on the second reflow SiO 2 film.
Claim 3
Dependent Claim
28 words
A method according to claim 1, wherein the heat treatment is performed at a temperature within a range of 100°-500° C. in an atmosphere of an inert gas.
Claim 4
Dependent Claim
18 words
A method according to claim 1, wherein the heat treatment is performed at 350° C. for 5 minutes.
Claim 5
Dependent Claim
39 words
A method according to claim 1, wherein the heat treatment step performed after the first reflow SiO 2 film forming step and the second reflow SiO 2 film forming step subsequent thereto are respectively performed a plurality of times.