US5387546A
Expired / Lapsed
US
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Method for manufacturing a semiconductor device
Assignee: Alcan Tech Co Inc
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Filing: 1992-06-22
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Granted: 1995-02-07
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Expires: 2012-06-22
Abstract
Abstract The present invention relates to a method for manufacturing a semiconductor device including a method for reforming an insulating film formed by a low temperature CVD method. It is an object of the present Invention to provide a method for manufacturing a semiconductor device capable of improving a film quality of an insulating film formed by a CVD method which is able to form a film at a low temperature and also capable of maintaining mass productivity, in which processing by irradiation with ultraviolet rays of the insulating film while heating the film after forming an insulating film (4) on a body to be formed by a chemical vapor deposition method is included.
Inventors
- 👤 Kazuo Maeda
- 👤 Noboru Tokumasu
- 👤 Yuko Nishimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:05
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0431; H10P72/0436; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/405; C23C16/56; H10P14/00; H10P14/60; H10P14/65; H10P14/6516; H10P14/6536; H10P14/6538; H10P14/66; H10P14/662; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393; H10P95/00; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/093; H10W20/095; H10W20/096; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/6921; H10P14/69215; H10P14/6922; H10P14/6923; Y; Y10; Y10S; Y10S148/00; Y10S148/003; Y10S148/004; Y10S148/09; Y10S148/093
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
80 words
A method for forming an insulating film comprising the steps of: a) forming an insulating film on a substrate by chemical vapor deposition, said insulating film being formed of a material selected from the group consisting of SiO 2 , PSG, BSG and BPSG; b) heating said substrate to an elevated temperature of 200°-240° C.; (c) thereafter irradiating said insulating film with ultraviolet rays while maintaining said substrate at said elevated temperature to densify said film over its entire thickness.
Claim 2
Independent Claim
80 words
A method for forming an insulating film comprising the steps of: a) forming an insulating film on a substrate by chemical vapor deposition, said insulating film being formed of a material selected from the group consisting of SiO 2 , PSG, BSG and BPSG; b) heating said substrate to an elevated temperature of 200°-240° C.; (c) thereafter irradiating said insulating film with ultraviolet rays while maintaining said substrate at said elevated temperature to densify said film over its entire thickness.
Claim 3
Dependent Claim
42 words
A method for forming an insulating film according to claim 1, wherein said film on said substrate is SiO 2 formed by CVD from a reaction gas which is a gas mixture of mono-silane (SiH 4 ) and oxygen (O 2 ).
Claim 4
Dependent Claim
56 words
A method for forming an insulating film according to claim 1, wherein the film on said substrate is one of PSG, BSG and BPSG formed from a reaction gas which is a gas mixture of mono-silane (SiH 4 ), oxygen (O 2 ) and a gas containing at least one of phosphorous (P) and boron (B).
Claim 5
Dependent Claim
41 words
A method for forming an insulating film according to claim 1, wherein said film on said substrate is SiO 2 formed by CVD from a reaction gas which is a gas mixture containing an organic silane and ozone (O 3 ).
Claim 6
Dependent Claim
25 words
A method for forming an insulating film according to claim 4, wherein said organic silane is an alkoxy-containing compound of silicon, siloxane or alkyl silane.
Claim 7
Dependent Claim
55 words
A method for forming an insulating film according to claim 1, wherein the film on said substrate is any of PSG, BSG and BPSG formed from a reaction gas which is a gas mixture of an organic silane, ozone (O 3 ) and a gas containing at least one of phosphorous (P) and boron (B).
Claim 8
Dependent Claim
27 words
A method for forming an insulating film according to claim 6, wherein said organic silane is an alkoxy-containing compound of silicon, a siloxane or an alkyl silane.
Claim 9
Dependent Claim
37 words
A method for forming an insulating film according to claim 1, wherein the insulating film is provided with a greater thickness than first deposited thickness by repeating steps (a), (b), (c) and (d) a plurality of times.
Claim 10
Independent Claim
97 words
A method for forming an insulating film comprising the steps of: a) forming an insulating film on a substrate by chemical vapor deposition, said insulating film being formed of a material selected from the group consisting of SiO 2 , PSG, BSG And BPSG; b) heating said substrate to an elevated temperature of 200°-450° C.; c) contacting said film with ammonia gas; and d) thereafter irradiating said insulating film with ultraviolet rays while maintaining said substrate at said elevated temperature and said film in contact with said ammonia gas, to densify said film over its entire thickness.
Claim 11
Independent Claim
97 words
A method for forming an insulating film comprising the steps of: a) forming an insulating film on a substrate by chemical vapor deposition, said insulating film being formed of a material selected from the group consisting of SiO 2 , PSG, BSG And BPSG; b) heating said substrate to an elevated temperature of 200°-450° C.; c) contacting said film with ammonia gas; and d) thereafter irradiating said insulating film with ultraviolet rays while maintaining said substrate at said elevated temperature and said film in contact with said ammonia gas, to densify said film over its entire thickness.
Claim 12
Dependent Claim
33 words
A method for forming an insulating film according to claim 9, wherein said elevated temperature of said substrate is 350° C. to 450° C. while said insulating film is irradiated with ultraviolet rays.
Claim 13
Dependent Claim
42 words
A method for forming an insulating film according to claim 9, wherein said film on said substrate is SiO 2 formed by CVD from a reaction gas which is a gas mixture of mono-silane (SiH 4 ) and oxygen (O 2 ).
Claim 14
Dependent Claim
54 words
A method for forming an insulating film according claim 9 wherein the film on said substrate is one of BSG and BPSG formed from a reaction gas which is a gas mixture of mono-silane (SiH 4 ), oxygen (O 2 ) and a gas containing at least one of phosphorous (P) and boron (B).
Claim 15
Dependent Claim
41 words
A method for forming an insulating film according to claim 9 wherein said film on said substrate is SiO 2 formed by CVD from a reaction gas which is a gas mixture containing an organic silane and ozone (O 3 ).
Claim 16
Dependent Claim
27 words
A method for forming an insulating film according to claim 12, wherein said organic silane is an alkoxy-containing compound of silicon, a siloxane, or an alkyl silane.
Claim 17
Dependent Claim
56 words
A method for forming an insulating film according to claim 9, wherein the film on said substrate is one of PSG, BSG and BPSG formed from a reaction gas which is a gas mixture containing an organic silane and ozone (O 3 ), and a gas containing at least one of phosphorous (P) and boron (B).
Claim 18
Dependent Claim
27 words
A method for forming an insulating film according to claim 15, wherein said organic silane is an alkoxy-containing compound of silicon, a siloxane or an alkyl silane.
Claim 19
Dependent Claim
37 words
A method for forming an insulating film according to claim 9, wherein the insulating film is provided with a greater thickness than first deposited thickness by repeating steps (a), (b), (c) and (d) a plurality of times.
Claim 20
Dependent Claim
19 words
A method for forming an insulating film according to claim 1 wherein said elevated temperature is 300°14 450° C.
Claim 21
Dependent Claim
18 words
A method for forming an insulating film according to claim 9 wherein said elevated temperature is 300°-450° C.
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