US5204141A
Expired / Lapsed
US
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Deposition of silicon dioxide films at temperatures as low as 100 degree c. by lpcvd using organodisilane sources
Assignee: Versum Materials US LLC
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Filing: 1991-09-18
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Granted: 1993-04-20
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Expires: 2011-09-18
Abstract
Abstract Process for depositing films of silicon dioxide by a low pressure CVD method, utilizing 1,4 disilabutane as the silicon precursor and molecular oxygen as the oxygen source. The deposition process permits films to be put down on a substrate at temperatures as low as 100° C. with essentially no carbon in the film. The 1,4 disilabutane can be used as a substitute for silane, a toxic, pyrophoric compressed gas.
Inventors
- 👤 David A. Roberts
- 👤 Arthur K. Hochberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:15
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/42; C23C16/40; C23C16/401; C23C16/402
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
106 words
A low temperature chemical vapor deposition process comprising the steps of: heating a substrate to a temperature of from about 95° C. to about 380° C. in a vacuum; introducing into the vacuum a silicon-containing feed and an oxygen containing feed, said silicon containing feed consisting essentially of an organodisilane having the general formula H.sub.3 Si--CH(R)--[CH(R')]y--CH(R")--SiH.sub.3 wherein y is 0, 1, 2, 3, 4, 5, 6 and R, R', and R" are independently selected from the group consisting essentially of H and C 1 -C 3 hydrocarbon; and maintaining said temperature and vacuum condition thereby causing a film of silicon dioxide to deposit on said substrate.
Claim 2
Dependent Claim
106 words
A low temperature chemical vapor deposition process comprising the steps of: heating a substrate to a temperature of from about 95° C. to about 380° C. in a vacuum; introducing into the vacuum a silicon-containing feed and an oxygen containing feed, said silicon containing feed consisting essentially of an organodisilane having the general formula H.sub.3 Si--CH(R)--[CH(R')]y--CH(R")--SiH.sub.3 wherein y is 0, 1, 2, 3, 4, 5, 6 and R, R', and R" are independently selected from the group consisting essentially of H and C 1 -C 3 hydrocarbon; and maintaining said temperature and vacuum condition thereby causing a film of silicon dioxide to deposit on said substrate.
Claim 3
Dependent Claim
14 words
A process according to claim 1 wherein said oxygen containing feed is oxygen gas.
Claim 4
Dependent Claim
21 words
A process according to claim 2 wherein the ratio of said oxygen gas to said organodisilane is between 1:1 and 15:1.
Claim 5
Dependent Claim
27 words
A process according to claim 1 wherein the organodisilane has the general formula H 3 Si--(CH 2 ) x --SiH 3 wherein x is 2,3,4,5 or 6.
Claim 6
Dependent Claim
12 words
A process according to claim 1 wherein the organodisilane is 1,4 disilabutane.
Claim 7
Dependent Claim
15 words
A process according to claim 5 wherein the temperature is maintained at about 100° C.
Claim 8
Dependent Claim
17 words
A process according to claim 6 wherein the vacuum is maintained at between 0.5 and 1.5 torr.
Claim 9
Dependent Claim
13 words
A process according to claim 1 wherein the substrate is a silicon wafer.
Claim 10
Dependent Claim
25 words
A process according to claim 1 wherein the substrate is selected from the group consisting of metals, plastics, insulators, dielectrics, photoresist materials and semi-conductor materials.
Claim 11
Dependent Claim
81 words
A low temperature chemical vapor deposition process comprising the steps of: heating a substrate to a temperature of from about 95° C. to about 380° C. in a vacuum; introducing into the vacuum a silicon-containing feed and an oxygen-containing feed, said silicon containing feed consisting essentially of an organodisilane having the general formula H.sub.3 Si--(CH.sub.2).sub.x --SiH.sub.3 wherein x is 2,3,4,5 or 6; and maintaining said temperature and vacuum conditions thereby causing a film of silicon dioxide to deposit on said substrate.
Claim 12
Dependent Claim
81 words
A low temperature chemical vapor deposition process comprising the steps of: heating a substrate to a temperature of from about 95° C. to about 380° C. in a vacuum; introducing into the vacuum a silicon-containing feed and an oxygen-containing feed, said silicon containing feed consisting essentially of an organodisilane having the general formula H.sub.3 Si--(CH.sub.2).sub.x --SiH.sub.3 wherein x is 2,3,4,5 or 6; and maintaining said temperature and vacuum conditions thereby causing a film of silicon dioxide to deposit on said substrate.
Claim 13
Dependent Claim
14 words
A process according to claim 10 wherein said oxygen containing feed is oxygen gas.
Claim 14
Dependent Claim
21 words
A process according to claim 11 wherein the ratio of said oxygen gas to said organodisilane is between 1:1 and 15:1.
Claim 15
Dependent Claim
12 words
A process according to claim 10 wherein the organodisilane is 1,4 disilabutane.
Claim 16
Dependent Claim
15 words
A process according to claim 10 wherein the temperature is maintained at about 100° C.
Claim 17
Dependent Claim
17 words
A process according to claim 10 wherein the vacuum is maintained at between 0.05 and 1.5 torr.
Claim 18
Dependent Claim
13 words
A process according to claim 10 wherein the substrate is a silicon wafer.
Claim 19
Dependent Claim
22 words
A process according to claim 10 wherein the organodisilane is 1,4 disilabutane and the temperature is between 100° C. and 380° C.
Claim 20
Dependent Claim
25 words
A process according to claim 10 wherein the substrate is selected from the group consisting of metals, plastics, insulators, dielectrics, photoresist materials and semi-conductor materials.
Claim 21
Dependent Claim
57 words
A low temperature chemical vapor deposition process comprising the steps of: heating a substrate to a temperature of from about 95° C. to about 380° C. in a vacuum; introducing into the vacuum 1,4 disilabutane and oxygen gas; and maintaining said temperature and vacuum condition thereby causing a film of silicon dioxide to deposit on said substrate.
Claim 22
Dependent Claim
57 words
A low temperature chemical vapor deposition process comprising the steps of: heating a substrate to a temperature of from about 95° C. to about 380° C. in a vacuum; introducing into the vacuum 1,4 disilabutane and oxygen gas; and maintaining said temperature and vacuum condition thereby causing a film of silicon dioxide to deposit on said substrate.
Claim 23
Dependent Claim
16 words
A process according to claim 19 wherein the temperature is between 100° C. and 380° C.
Claim 24
Dependent Claim
16 words
A process according to claim 19 wherein the vacuum is maintained between 0.5 and 1.5 torr.
Claim 25
Dependent Claim
25 words
A process according to claim 19 wherein the substrate is selected from the group consisting of metals, plastics, insulators, dielectrics, photoresist materials and semi-conductor materials.
References Cited (Backward Citations)
US4900591A
Cited
US4923716A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-04-19 | 1996-10-19 | 1997-04-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-04-19 | 2000-10-19 | 2001-04-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-04-19 | 2004-10-19 | 2005-04-20 | $7700.00 | Window Closed / Lapsed |