US4900591A
Expired / Lapsed
US
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Method for the deposition of high quality silicon dioxide at low temperature
Assignee: United States Department of the Air Force
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Filing: 1988-01-20
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Granted: 1990-02-13
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Expires: 2008-01-20
Abstract
Abstract The invention comprises a pyrolytic process for the deposition of high quality silicon dioxide at temperatures of 100°-330° C. Deposition is achieved by reacting silane and oxygen in the 2-12 torr pressure range, yielding deposition rates of 140 Å/min at 300° C. and 50 Å/min at 120° C. Measurements of refractive index (1.45-1.46), field strength (3-10×10 6 V/cm), and resistivity (10 13 -10 15 -cm) indicate that the oxides are near stoichiometric SiO 2 . This technology appears promising the Group IV and Group III-V device applications.
Inventors
- 👤 Brian R. Bennett
- 👤 Joseph P. Lorenzo
- 👤 Kenneth Vaccaro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:37
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
68 words
A method of depositing silicon dioxide on a substrate comprising the steps of: placing the substrate in a reaction chamber; heating the substrate to between 80° C. and 330° C.; evacuating the reaction chamber containing the substrate to 2-12 torr; and subjecting the substrate to a non-excited gas flow mixture comprising silicon and oxygen bearing compounds in order to deposit a near-stoichiometric silicon dioxide layer upon said substrate.
Claim 2
Independent Claim
68 words
A method of depositing silicon dioxide on a substrate comprising the steps of: placing the substrate in a reaction chamber; heating the substrate to between 80° C. and 330° C.; evacuating the reaction chamber containing the substrate to 2-12 torr; and subjecting the substrate to a non-excited gas flow mixture comprising silicon and oxygen bearing compounds in order to deposit a near-stoichiometric silicon dioxide layer upon said substrate.
Claim 3
Dependent Claim
19 words
The method of depositing silicon dioxide on a substrate of claim 1 wherein the silicon bearing compound is silane.
Claim 4
Dependent Claim
22 words
The method of depositing silicon dioxide on a substrate of claim 1 wherein the reaction chamber is evacuated to approximately 3 torr.
Claim 5
Dependent Claim
17 words
The method of depositing silicon dioxide on a substrate of claim 1 wherein the substrate comprises silicon.
Claim 6
Dependent Claim
18 words
The method of depositing silicon dioxide on a substrate of claim 1 wherein the substrate comprises indium phosphide.
Claim 7
Dependent Claim
17 words
The method of depositing silicon dioxide on a substrate of claim 1 wherein the substrate comprises gallium.
Claim 8
Dependent Claim
33 words
The method of depositing silicon dioxide on a substrate of claim 1 wherein the silicon bearing compound is selected from the group consisting of silane, disilane, silicon tetrachloride, hexachlorodisilane, tetraethoxysilane, tetramethylcyclotetrasiloxane and dichlorosilane.
Claim 9
Dependent Claim
35 words
The method of depositing silicon dioxide on a substrate of claim 1 wherein the oxygen bearing compound is selected from the group consisting of oxygen, nitrous oxide, nitric oxide, nitrogen dioxide, carbon dioxide and ozone.
Claim 10
Dependent Claim
23 words
The method of depositing silicon dioxide on a substrate of claim 1 wherein the silicon bearing compound comprises 3 percent silane in helium.
Claim 11
Dependent Claim
38 words
A method of depositing silicon dioxide on a substrate of claim 1 further comprising the step of subjecting the substrate and silicon dioxide layer to a low temperature heat treatment in order to densify the silicon dioxide layer.
Claim 12
Independent Claim
74 words
A method of depositing silicon dioxide on a substrate comprising the step of: placing the substrate in a reaction chamber; heating the substrate to between 80° C. and 330° C.; evacuating the reaction chamber containing the substrate to 2-12 torr; and subjecting the substrate to a substantially non-excited gas flow mixture comprising silicon and oxygen bearing compounded in order to deposit by a strictly pyrolytic method, a near-stoichiometric silicon dioxide layer upon said substrate.
Claim 13
Independent Claim
74 words
A method of depositing silicon dioxide on a substrate comprising the step of: placing the substrate in a reaction chamber; heating the substrate to between 80° C. and 330° C.; evacuating the reaction chamber containing the substrate to 2-12 torr; and subjecting the substrate to a substantially non-excited gas flow mixture comprising silicon and oxygen bearing compounded in order to deposit by a strictly pyrolytic method, a near-stoichiometric silicon dioxide layer upon said substrate.
Claim 14
Dependent Claim
33 words
The method of depositing silicon dioxide on a substrate of claim 11 wherein the silicon bearing compound is selected from the group consisting of silane, disilane, silicon tetrachloride, hexachlorodisilane, tetraethoxysilane, tetramethyclcyclotetrasiloxane and dichlorosilane.
Claim 15
Dependent Claim
35 words
The method of depositing silicon dioxide on a substrate of claim 11 wherein the oxygen bearing compound is selected from the group consisting of oxygen, nitrous oxide, nitric oxide, nitrogen dioxide, carbon dioxide and ozone.
Claim 16
Dependent Claim
23 words
The method of depositing silicon dioxide on a substrate of claim 11 wherein the silicon bearing compound comprises 3 percent silane in helium.
Claim 17
Dependent Claim
38 words
The method of depositing silicon dioxide on a substrate of claim 11 further comprising the step of subjecting the substrate and silicon dioxide layer to a low temperature heat treatment in order to densify the silicon dioxide layer.
Claim 18
Independent Claim
89 words
A method of depositing silicon dioxide on a substrate comprising the steps of: placing the substrate in a reaction chamber; heating the substrate to between 80° C. and 330° C.; evacuating the reaction chamber containing the substrate to 2-12 torr; and subjecting the substrate to a non-excited gas flow mixture comprising silicon and oxygen bearing compounds in order to deposit a near-stoichiometric silicon dioxide layer upon said substrate wherein the silicon bearing compound is selected from the group consisting of silane, disilane, silicon tetrachloride, hexachlorodisilane, tetraethoxysilane, tetramethylcyclotetrasiloxanne and dichlorosilane.
Claim 19
Independent Claim
89 words
A method of depositing silicon dioxide on a substrate comprising the steps of: placing the substrate in a reaction chamber; heating the substrate to between 80° C. and 330° C.; evacuating the reaction chamber containing the substrate to 2-12 torr; and subjecting the substrate to a non-excited gas flow mixture comprising silicon and oxygen bearing compounds in order to deposit a near-stoichiometric silicon dioxide layer upon said substrate wherein the silicon bearing compound is selected from the group consisting of silane, disilane, silicon tetrachloride, hexachlorodisilane, tetraethoxysilane, tetramethylcyclotetrasiloxanne and dichlorosilane.
Claim 20
Dependent Claim
35 words
The method of depositing silicon dioxide on a substrate of claim 16 wherein the oxygen bearing compound is selected from the group consisting of oxygen, nitrous oxide, nitric oxide, nitrogen dioxide, carbon dioxide and ozone.
Claim 21
Dependent Claim
17 words
The method of depositing silicon dioxide on a substrate of claim 16 wherein the substrate comprises silicon.
Claim 22
Dependent Claim
18 words
The method of depositing silicon dioxide on a substrate of claim 16 wherein the substrate comprises indium phosphide.
Claim 23
Dependent Claim
17 words
The method of depositing silicon dioxide on a substrate of claim 16 wherein the substrate comprises gallium.1
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-02-12 | 1993-08-14 | 1994-02-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-02-12 | 1997-08-14 | 1998-02-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-02-12 | 2001-08-14 | 2002-02-13 | $7700.00 | Window Closed / Lapsed |