US4500388A
Expired / Lapsed
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Method for forming monocrystalline semiconductor film on insulating film
Assignee: Toshiba Corp
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Filing: 1982-11-29
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Granted: 1985-02-19
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Expires: 2002-11-29
Abstract
Abstract A monocrystalline semiconductor film is formed on an insulating film first by selectively forming at least one insulating film which has sides substantially perpendicular to <100> or <211>-axes, contiguous to a cubic crystal system monocrystalline semiconductor substrate. An amorphous film of a cubic crystal system semiconductor material is formed to cover an exposed surface of substrate and the insulating film. The amorphous semiconductor film is annealed under a condition such that the amorphous film is grown from the substrate by solid-phase epitaxial growth, thereby converting the amorphous film to a monocrystalline semiconductor film having a crystal lattice continuous to that of the substrate.
Inventors
- 👤 Yamichi Ohmura
- 👤 Yoshiaki Matsushita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 23:24
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10D; H10D62/00; H10D62/40; H10P14/27; H10P14/271; H10P14/274; H10P14/2902; H10P14/2905; H10P14/2911; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3458; H10P14/3466; H10P14/38; H10P14/3802; H10P14/3808; H10P95/00; H10P95/90; Y; Y10; Y10S; Y10S117/00; Y10S117/901; Y10S117/902; Y10S148/00; Y10S148/003; Y10S148/09; Y10S148/123; Y10S148/154; Y10S438/00; Y10S438/973
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
107 words
A method for forming a monocrystalline semiconductor film on an insulating film, comprising the steps of: selectively forming at least one insulating film which has sides substantially perpendicular to <100> or <211>-axes, contiguous to a cubic crystal system monocrystalline semiconductor substrate; forming an amorphous film of a cubic crystal system semiconductor material to cover an exposed surface of said substrate and said insulating film; and annealing said amorphous semiconductor film under a condition such that said amorphous film is grown from said substrate by solid-phase epitaxial growth, thereby converting said amorphous film to a monocrystalline semiconductor film having a crystal lattice continuous to that of said substrate.
Claim 2
Independent Claim
107 words
A method for forming a monocrystalline semiconductor film on an insulating film, comprising the steps of: selectively forming at least one insulating film which has sides substantially perpendicular to <100> or <211>-axes, contiguous to a cubic crystal system monocrystalline semiconductor substrate; forming an amorphous film of a cubic crystal system semiconductor material to cover an exposed surface of said substrate and said insulating film; and annealing said amorphous semiconductor film under a condition such that said amorphous film is grown from said substrate by solid-phase epitaxial growth, thereby converting said amorphous film to a monocrystalline semiconductor film having a crystal lattice continuous to that of said substrate.
Claim 3
Dependent Claim
32 words
A method according to claim 1, wherein said insulating film is formed in a strip form which has a uniform thickness and parallel long sides substantially perpendicular to the <100> or <211>-axes.
Claim 4
Dependent Claim
18 words
A method according to claim 2, wherein said insulating film has long sides substantially perpendicular to the <211>-axes.
Claim 5
Dependent Claim
18 words
A method according to claim 2, wherein said insulating film has long sides substantially perpendicular to the <100>-axes.
Claim 6
Dependent Claim
20 words
A method according to claim 2, wherein said amorphous film is formed by vacuum-depositing a cubic crystal system semiconductor material.
Claim 7
Dependent Claim
32 words
A method according to claim 2, wherein said amorphous film is formed by forming a polycrystalline film of a cubic crystal system semiconductor material and then ion-implanting to destroy the polycrystalline lattice.
Claim 8
Dependent Claim
16 words
A method according to claim 2, wherein said insulating film comprises silicon oxide or silicon nitride.
Claim 9
Dependent Claim
29 words
A method according to claim 2, wherein said cubic crystal system semiconductor is a member selected from the group consisting of silicon, germanium, and a III-V Group compound semiconductor.
Claim 10
Dependent Claim
13 words
A method according to claim 2, wherein said substrate has a (111) plane.
Claim 11
Dependent Claim
13 words
A method according to claim 2, wherein said substrate has a (110) plane.
Claim 12
Dependent Claim
13 words
A method according to claim 2, wherein said substrate has a (100) plane.
Claim 13
Dependent Claim
33 words
A method according to claim 2, wherein said annealing is conducted at a temperature below a melting point T (°K.) of the semiconductor material comprising the amorphous film and above 1/2 T (°K.).
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-02-19 | 1988-08-20 | 1989-02-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-02-19 | 1992-08-20 | 1993-02-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-02-19 | 1996-08-20 | 1997-02-19 | $7700.00 | Window Closed / Lapsed |