US4624859A
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Method of producing silicon dioxide films
Assignee: Mitsubishi Electric Corp
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Filing: 1985-05-28
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Granted: 1986-11-25
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Expires: 2005-05-28
Abstract
Abstract PCT No. PCT/JP84/00274 Sec. 371 Date Jul. 10, 1985 Sec. 102(e) Date Jul. 10, 1985 PCT Filed May 28, 1985.A method of producing silicon dioxide films for use as insulating films in semiconductor elements, wherein the composition proportion of silicon and oxygen atoms and the bond thereof are satisfactory so that no pinholes are present, and a film of high density is obtained. The method includes heating a material of silicon or silicon oxides 11 thereby to vaporize the same in a gas ambient consisting mainly of oxygen atoms in a vacuum container 18; ionizing or exciting the vaporized material; and accelerating the ionized material so as to collide with the surface of a substrate 17, thereby producing a silicon dioxide film on the substrate 17.
Inventors
- 👤 Shuhara Akira
- 👤 Yamanishi Kenichiro
- 👤 Minowa Yoshibumi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 03:00
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/10; C23C14/22; C23C14/221
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
88 words
A method of producing silicon dioxide films comprising: a first step of heating a material comprising silicon or siiicon oxides to vaporize said material; a second step of ionizing or exciting said vaporized material; and a third step of accelerating the ionized material so that it collides with the surface of a substrate; conducting said first, second and third steps in a vacuum container having an ambient gas consisting mainly of oxygen atoms to thereby enable silicon dioxide to be vapor-plated on the substrate to a predetermined thickness.
Claim 2
Independent Claim
88 words
A method of producing silicon dioxide films comprising: a first step of heating a material comprising silicon or siiicon oxides to vaporize said material; a second step of ionizing or exciting said vaporized material; and a third step of accelerating the ionized material so that it collides with the surface of a substrate; conducting said first, second and third steps in a vacuum container having an ambient gas consisting mainly of oxygen atoms to thereby enable silicon dioxide to be vapor-plated on the substrate to a predetermined thickness.
Claim 3
Dependent Claim
43 words
A method of producing silicon dioxide films as defined in claim 1, wherein said first step comprises: packing said material in a closed container having a nozzle; heating said closed container; and ejecting said heated material from said nozzle in a vapor form.
Claim 4
Dependent Claim
30 words
A method of producing silicon dioxide films as defined in claim 1, wherein said ambient gas in said vacuum container is produced by introducing an oxygen or ozone gas therein.
Claim 5
Dependent Claim
47 words
A method of producing silicon dioxide films as defined in claim 1, further comprising a fourth step of ionizing, exciting or dissolving at least part of said ambient gas in said vacuum container, thereby enabling the ionized, excited or dissolved ambient gas to react with said material.
Claim 6
Dependent Claim
32 words
A method of producing silicon dioxide films as defined in claim 3, wherein said oxygen or ozone introduced into said vacuum container reacts with said material near the surface of said substrate.
Claim 7
Dependent Claim
29 words
A method of producing silicon dioxide films as defined in claim 3, wherein said oxygen or ozone introduced into said vacuum container reacts with said material near ionizing filaments.
Claim 8
Dependent Claim
30 words
A method of producing silicon dioxide films as defined in claim 4, wherein said ionized, excited or dissolved ambient gas reacts with said material near the surface of said substrate.
Claim 9
Dependent Claim
48 words
A method of producing silicon dioxide films as defined in claim 1, wherein the partial pressure of oxygen in said vacuum container is predetermined such that the number of oxygen atoms colliding with said substrate is not smaller than the number of silicon atoms colliding with said substrate.
Claim 10
Dependent Claim
24 words
A method of producing silicon dioxide films as defined in claim 1, wherein said silicon oxides are selected from silicon monoxide or silicon dioxide.
Claim 11
Dependent Claim
30 words
A method of producing silicon dioxide films as defined in claim 2, wherein said ambient gas in said vacuum container is produced by introducing an oxygen or ozone gas therein.
Claim 12
Dependent Claim
47 words
A method of producing silicon dioxide films as defined in claim 2, further comprising a fourth step of ionizing, exciting or dissolving at least part of said ambient gas in said vacuum container, thereby enabling the ionized, excited or dissolved ambient gas to react with said material.
Claim 13
Dependent Claim
47 words
A method of producing silicon dioxide films as defined in claim 3, further comprising a fourth step of ionizing, exciting or dissolving at least part of said ambient gas in said vacuum container, thereby enabling the ionized, excited or dissolved ambient gas to react with said material.
Claim 14
Dependent Claim
48 words
A method of producing silicon dioxide films as defined in claim 2, wherein the partial pressure of oxygen in said vacuum container is predetermined such that the number of oxygen atoms colliding with said substrate is not smaller than the number of silicon atoms colliding with said substrate.
Claim 15
Dependent Claim
48 words
A method of producing silicon dioxide films as defined in claim 3, wherein the partial pressure of oxygen in said vacuum container is predetermined such that the number of oxygem atoms colliding with said substrate is not smaller than the number of silicon atoms colliding with said substrate.
Claim 16
Dependent Claim
48 words
A method of producing silicon dioxide films as defined in claim 4, wherein the partial pressure of oxygen in said vacuum container is predetermined such that the number of oxygen atoms colliding with said substrate is not smaller than the number of silicon atoms colliding with said substrate.
Claim 17
Dependent Claim
48 words
A method of producing silicon dioxide films as defined in claim 5, wherein the partial pressure of oxygen in said vacuum container is predetermined such that the number of oxygen atoms colliding with said substrate is not smaller than the number of silicon atoms colliding with said substrate.
Claim 18
Dependent Claim
48 words
A method of producing silicon dioxide films as defined in claim 6, wherein the partial pressure of oxygen in said vacuum container is predetermined such that the number of oxygen atoms colliding with said substrate is not smaller than the number of silicon atoms colliding with said substrate.
Claim 19
Dependent Claim
48 words
A method of producing silicon dioxide films as defined in claim 7, wherein the partial pressure of oxygen in said vacuum container is predetermined such that the number of oxygen atoms colliding with said substrate is not smaller than the number of silicon atoms colliding with said substrate.
Claim 20
Dependent Claim
24 words
A method of producing silicon dioxide films as defined in claim 8, wherein said silicon oxides are selected from silicon monoxide or silicon dioxide.
Claim 21
Dependent Claim
48 words
A method of producing silicon dioxide films as defined in claim 9, wheeein the partial pressure of oxygen in said vacuum container is predetermined such that the number of oxygen atoms colliding with said substrate is not smaller than the number of silicon atoms colliding with said substrate.
Claim 22
Dependent Claim
24 words
A method of producing silicon dioxide films as defined in claim 2, wherein said silicon oxides are selected from silicon monoxide or silicon dioxide.
Claim 23
Dependent Claim
24 words
A method of producing silicon dioxide films as defined in claim 3, wherein said silicon oxides are selected from silicon monoxide or silicon dioxide.
Claim 24
Dependent Claim
24 words
A method of producing silicon dioxide films as defined in claim 4, wherein said silicon oxides are selected from silicon monoxide or silicon dioxide.
Claim 25
Dependent Claim
24 words
A method of producing silicon dioxide films as defined in claim 5, wherein said silicon oxides are selected from silicon monoxide or silicon dioxide.
Claim 26
Dependent Claim
24 words
A method of producing silicon dioxide films as defined in claim 6, whereih said silicon oxides are selected from silicon monoxide or silicon dioxide.
Claim 27
Dependent Claim
25 words
A method of producing silicon dioxide films as defined in claim 7, where n said silicon oxides are selected from silicon monoxide or silicon dioxide.
Claim 28
Independent Claim
67 words
A method of producing a silicon dioxide film comprising: positioning a substrate in a vacuum container with an ambient gas consisting mainly of oxygen atoms; heating a material comprising silicon or silicon oxides to vaporize said material; ionizing said vaporized material; and accelerating said ionized material so that is collides with the surface of said substrate to thereby vapor-plate said substrate to form said silicon dioxide film.
Claim 29
Independent Claim
67 words
A method of producing a silicon dioxide film comprising: positioning a substrate in a vacuum container with an ambient gas consisting mainly of oxygen atoms; heating a material comprising silicon or silicon oxides to vaporize said material; ionizing said vaporized material; and accelerating said ionized material so that is collides with the surface of said substrate to thereby vapor-plate said substrate to form said silicon dioxide film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-11-24 | 1990-05-26 | 1990-11-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-11-24 | 1994-05-26 | 1994-11-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-11-24 | 1998-05-26 | 1998-11-25 | $7700.00 | Window Closed / Lapsed |