EP0522799A2
Expired / Lapsed
EP
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Dielectric deposition
Assignee: AT&T Inc
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Filing: 1992-07-02
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Granted: —
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Expires: 2012-07-02
Abstract
Abstract A method for forming a thin high quality interlevel dielectric (i.e., 19) is disclosed. The dielectric (i.e., 19) is produced in a plasma reactor utilizing a precursor gas such as TEOS. Pressure, power, temperature, gas flow, and showerhead spacing are controlled so that a dielectric of TEOS may be deposited at 60-5 Å/sec., thus making formation of thin (800 Å) high quality dielectrics feasible.
Inventors
- 👤 Chen-Hua Douglas Yu
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 11:19
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10W; H10W20/00; H10W20/01; H10W20/071; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; Y; Y10; Y10S; Y10S148/00; Y10S148/118
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
78 words
A method of semiconductor integrated circuit fabrication comprising: depositing a dielectric material (i.e., 19) upon a body (i.e., 11) by a plasma enhanced chemical vapor deposition process, said deposition taking place from a precursor gas and oxygen, each having respective flow rates, and CHARACTERIZED IN THAT the oxygen and precursor gas flow rates are controlled so as to produce a deposition rate which is less than the deposition rate of a standard plasma enhanced chemical vapor deposition process.
Claim 2
Dependent Claim
23 words
The method of claim 1 in which said ratio of oxygen gas flow to said precursor gas flow is greater than approximately 2.4.
Claim 3
Dependent Claim
44 words
The method of claim 1 in which said deposition takes place in a reactor, there being a pressure inside said reactor and said pressure is chosen from the group consisting of the ranges 8 torr ± 10%, 6 torr ± 10%, and 6-8 torr.
Claim 4
Dependent Claim
31 words
The method of claim 1 in which said plasma is characterized by a total power and said power is chosen from the group consisting of 350W ± 10%, 100-200W; and 200-300W.
Claim 5
Dependent Claim
12 words
The method of claim 1 in which said precursor gas is TEOS.
Claim 6
Dependent Claim
31 words
The method of claim 5 in which said TEOS flow rate is chosen from the group consisting of 200 sccm ± 10%, 100 sccm ± 10%, and 50 sccm ± 10%.
Claim 7
Dependent Claim
31 words
The method of claim 5 in which said oxygen flow rate is chosen from the group consisting of 600 sccm ± 10%, 700 sccm ± 10%, and 750 sccm ± 10%.
Claim 8
Dependent Claim
28 words
The method of claim 1 in which said body (i.e., 11) is on a susceptor and said susceptor temperature is greater than 390°C and less than approximately 410°C.
Claim 9
Dependent Claim
49 words
The method of claim 1 in which said body (i.e., 11) is on a susceptor and there is a showerhead a predetermined distance opposite and said susceptor said distance between said showerhead and said susceptor is chosen from the group consisting of 200-300 mil and 300 mil ± 10%.
Claim 10
Dependent Claim
12 words
The method of claim 1 in which said precursor gas is TMCTS.
References Cited (Backward Citations)
No citation records indexed.
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