Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
93 words
A fabrication method for an integrated circuit structure, comprising the steps
of: forming an oxide structure which includes, distributed there-through, a first layer
comprising silicon and carbon; and polishing said oxide structure, using a slurry composition which has a selectivity
to said first layer of greater than 10 to 1, so that said polishing step smoothly removes
said oxide on a first side of said first layer and stops on exposed areas of said first layer; whereby said exposed areas of said first layer define a uniform surface level for
said oxide structure.
Claim 2
Dependent Claim
14 words
The fabrication method of Claim 1, wherein said polishing step uses chemical
mechanical polishing.
Claim 3
Dependent Claim
22 words
The fabrication method of Claim 1 or Claim 2, wherein said oxide structure
fills a trench which extends into a semiconductor material.
Claim 4
Dependent Claim
19 words
The fabrication method of Claim 1, Claim 2 or Claim 3, wherein said first
layer consists of silicon carbide.
Claim 5
Dependent Claim
92 words
A fabrication method for an integrated circuit structure, comprising the steps
of: (a) providing a substrate which includes a body of semiconductor material; (b) depositing a first layer comprising silicon and carbon over said semiconductor
material; (c) forming isolation structures which extend through said first layer into said
semiconductor material; (d) filling said isolation structures with a dielectric which also extends over at
least a portion of said first layer; (e) performing polishing to planarize said integrated circuit structure;
wherein said first layer acts as a polish stop for said polishing step.
Claim 6
Dependent Claim
13 words
The method of Claim 5, wherein said first layer consists of silicon carbide.
Claim 7
Dependent Claim
50 words
The method of Claim 5 or Claim 6, further comprising the step, before said
step (b) of: (a1) forming a layer of an oxide over said semiconductor material; (a2) depositing a layer of silicon nitride over said layer of oxide; wherein said first layer directly overlies said silicon nitride layer.
Claim 8
Dependent Claim
19 words
The fabrication method of Claim 5, Claim 6 or Claim 7, wherein said polishing
step uses chemical mechanical polishing.
Claim 9
Dependent Claim
36 words
The fabrication method of any one of the preceding Claims, wherein the first
layer contains at least one percent as much carbon as silicon, or at least 0.01 or 0.0001
percent as much carbon as silicon.