Method for forming a thin film of a silicon oxide on a silicon substrate, by BCR plasma

Claim 1

A method for forming a laminated film comprising a silicon oxide which contains fluorine and a silicon oxide which does not contain fluorine on a silicon substrate by a plasma CVD method using an ECR plasma system, comprising the steps of: (a) setting a substrate on a stage in a vacuum chamber or of an ECR plasma system; (b) exhausting a gas in said vacuum chamber to reduce the gas pressure; (c) supplying an O 2 gas and/or an N 2 O gas into said vacuum chamber; (d) generating an ECR plasma by applying a microwave of determined frequency and applying a determined magnetic flux density; (e) forming Al lines or Al alloy lines; (f) depositing a first silicon oxide film which does not contain fluorine on a surface of said lines by supplying a silicon compound gas into said vacuum chamber; (g) depositing a second silicon oxide film which contains fluorine on said first silicon oxide film by supplying a silicon fluoride gas into said vacuum chamber.

Claim 2

A method for forming a laminated film comprising a silicon oxide which contains fluorine and a silicon oxide which does not contain fluorine on a silicon substrate by a plasma CVD method using an ECR plasma system, comprising the steps of: (a) setting a substrate on a stage in a vacuum chamber or of an ECR plasma system; (b) exhausting a gas in said vacuum chamber to reduce the gas pressure; (c) supplying an O 2 gas and/or an N 2 O gas into said vacuum chamber; (d) generating an ECR plasma by applying a microwave of determined frequency and applying a determined magnetic flux density; (e) forming Al lines or Al alloy lines; (f) depositing a first silicon oxide film which does not contain fluorine on a surface of said lines by supplying a silicon compound gas into said vacuum chamber; (g) depositing a second silicon oxide film which contains fluorine on said first silicon oxide film by supplying a silicon fluoride gas into said vacuum chamber.