Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To obtain a gate insulating film for an insulated gate type field effect transistor with high gate insulating withstand voltage and low interface level density by forming the gate insulating film of the insulated gate type field effect transistor through plasma CVD process using monosilane derivative gas containing at least one element selected from chlorine and fluorine. CONSTITUTION:A gate insulating film 104 is formed by plasma CVD process using monosilane derivative gas containing at least one element selected from chlorine and fluorine. According to one example of the film forming method, dichlorosilane and oxygen or nitrous oxide are introduced in a plasma CVD device as reaction gas, and substrate temperature is held at 200 deg.C-450 deg.C and a high frequency voltage is applied to decompose the gas to form the oxide film. In addition to this, the film formation carried out by mixing hydrogen chloride with monosilane or monosilane derivative leads to the same effect.

Inventors

• 👤 Hideaki Oka
• 👤 秀明 岡

Bibliographic Details