Method of forming silicon oxide film containing fluorine

Abstract

Abstract By using a vapor containing alkoxyfluorosilane as a main component, a silicon oxide film containing fluorine is formed on a substrate (104) at a temperature of 200°C or less in a reaction chamber (101) having a predetermined temperature and a predetermined pressure. For example, triethoxyfluorosilane may be supplied to the chamber (101) from a bubbler (107) and steam may be supplied from a bubbler (108). In addition, an organic film such as a photoresist film (304) can be used as a mask to selectively form the silicon oxide film. Although the silicon oxide film can be formed at a very low temperature of 30°C, the film has a water content smaller than that of a silicon oxide film formed at a temperture of 250°C by a conventional method. In addition, the film properties of the silicon oxide film are better than those of the silicon oxide film formed by the conventional method. Furthermore, a two-layered aluminum wiring structure can be easily formed by a selective growing method.

Inventors

• 👤 Tetsuya c/o NEC Corporation Homma

Bibliographic Details