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US5215787A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of forming silicon oxide film containing fluorine

Assignee: NEC Electronics Corp
•
Filing: 1992-01-14
•
Granted: 1993-06-01
•
Expires: 2012-01-14
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Abstract

Abstract It is an object of the present invention to provide an excellent silicon oxide film formed at a temperature of 200° C. or less, a method of forming the silicon oxide film, and a selective growing method. According to the present invention, by using a vapor containing alkoxyfluorosilane as a main component, a silicon oxide film containing fluorine is formed at a temperature of 200° C. or less in a reaction chamber having a predetermined temperature and a predetermined pressure. In addition, an organic film such as a photoresist film is used as a mask to selectively form the silicon oxide film. Although the silicon oxide film containing fluorine and formed on the basis of the present invention is formed at a very low temperature of 30° C., this silicon oxide film has a water content smaller than that of a silicon oxide film formed at a temperature of 250° C. in a conventional method. In addition, the film properties of the silicon oxide film according to the present invention are better than those of the silicon oxide film formed in the conventional method. Furthermore, a two-layered aluminum wiring structure can be easily formed by the selective growing method.

Inventors

  • 👤 Tetsuya Homma

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 07:59
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; H10W; H10W20/00; H10W20/01; H10W20/071; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10P14/6924

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 69 words
A method of forming a silicon oxide film containing fluorine on a substrate, wherein said silicon oxide film is formed using a vapor containing an alkoxyfluorosilane represented by the general formula F n -Si(OR) 4-n , wherein R is an alkyl group and n is an integer of 1 to 3, as a main component in a reaction chamber at a substrate temperature of not more than 200° C.
Claim 2
Independent Claim 69 words
A method of forming a silicon oxide film containing fluorine on a substrate, wherein said silicon oxide film is formed using a vapor containing an alkoxyfluorosilane represented by the general formula F n -Si(OR) 4-n , wherein R is an alkyl group and n is an integer of 1 to 3, as a main component in a reaction chamber at a substrate temperature of not more than 200° C.
Claim 3
Dependent Claim 13 words
The method according to claim 1, wherein triethoxyfluorosilane is used as the alkoxyfluorosilane.
Claim 4
Independent Claim 58 words
A method of forming a silicon oxide film containing fluorine, wherein said silicon oxide film is selectively formed on a substrate surface having an organic film pattern, except at portions for said organic film pattern, using a vapor containing alkoxyfluorosilane as a main component in a reaction chamber at a substrate temperature of not more than 150° C.
Claim 5
Independent Claim 58 words
A method of forming a silicon oxide film containing fluorine, wherein said silicon oxide film is selectively formed on a substrate surface having an organic film pattern, except at portions for said organic film pattern, using a vapor containing alkoxyfluorosilane as a main component in a reaction chamber at a substrate temperature of not more than 150° C.
Claim 6
Dependent Claim 27 words
The method according to claim 3, wherein said organic film pattern is formed by any one of a photoresist film, a Teflon film, and a polyimide film.
Claim 7
Dependent Claim 51 words
The method according to claim 3, wherein said organic film pattern is formed on a wiring pattern formed on a semiconductor substrate, and another silicon oxide film is formed as an insulating interlayer on said wiring pattern from which said organic film pattern is removed and on said silicon oxide film.
Claim 8
Dependent Claim 14 words
The method according to claim 5, wherein said another silicon oxide film contains fluorine.
Claim 9
Dependent Claim 50 words
A method according to claim 3, wherein said organic film pattern is formed on a wiring pattern formed on a semiconductor substrate, and an insulating film is formed as an insulating interlayer on said wiring pattern from which said organic film pattern is removed and on said silicon oxide film.

References Cited (Backward Citations)

US4300989A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1996-05-31 1996-11-30 1997-06-01 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2000-05-31 2000-11-30 2001-06-01 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2004-05-31 2004-11-30 2005-06-01 $7700.00 Window Closed / Lapsed

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