Semiconductor memory device

Abstract

Abstract PURPOSE:To increase components per chip of a semiconductor memory device by arranging memory cell units in series, and using switching means such as transistors also as element separating means in the direction parallel to a word line, and further providing one contact hole for a plurality of capacity elements connected in series. CONSTITUTION:A capacity insulating film 6, and a first and a second capacity elements 31, 32 constructed from a capacity insulating film 6 consisting of an oxide film and polycrystalline silicon earth electrodes 5, 15 are provided on a P-type silicon semiconductor substrate 1. A first, a second, and a third transistors 41, 42, 43, constructed from a gate insulating film 4 and gate electrodes 3, 13, 23 consisting of polycrystalline silicon, are provided on both sides of the capacity elements. The first transistor 41 is connected to a data line 2 via a data line connecting part 8. In storing data, the data is stored in the capacity element located innermost position as seen from the connection part with the data line, and the innermost and the next innermost capacity elements are disconnected by a switch means, and then the next data is stored in the next innermost capacity element.

Inventors

• 👤 Satoshi Nakagawa
• 👤 聡 中川
• 👤 Isao Murakami
• 👤 村上　勇雄
• 👤 Taku Kawahara
• 👤 卓 河原

Bibliographic Details