US5156881A
Expired / Lapsed
US
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Method for forming a film on a substrate by activating a reactive gas
Assignee: Toshiba Corp
•
Filing: 1991-04-16
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Granted: 1992-10-20
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Expires: 2011-04-16
Abstract
Abstract A thin film forming method includes the steps of supporting a semiconductor substrate having a trench or unevenness thereon in a reaction vessel, introducing a reactive gas into the reaction vessel, activating the reactive gas to form a deposit species, exhausting the interior of the reaction vessel, and cooling the semiconductor substrate below the liquid faction temperature of the deposit species to cause the deposit species to become a material deposited on the semiconductor substrate.
Inventors
- 👤 Haruo Okano
- 👤 Sadahisa Noguchi
- 👤 Makoto Sekine
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:39
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; C; C23; C23C; C23C16/00; C23C16/04; C23C16/045; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; C23C16/44; C23C16/46; C23C16/463; H10P14/6338; H10P14/65; H10P14/6516; H10P14/6529; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; H10P14/694; H10P14/6943; H10P14/69433; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; H10P14/6684; H10P14/6686; H10P14/69215; Y; Y10; Y10S; Y10S148/00; Y10S148/05
Claims Analysis
Total Claims: 52
Claim 1
Independent Claim
75 words
A thin film forming method, comprising the steps of: supporting a semiconductor substrate having a trench or an unevenness thereon in a reaction vessel; introducing a reactive gas into the reaction vessel; activating the reactive gas to form a deposit species; exhausting the interior of the reaction vessel; and cooling the semiconductor substrate below the liquefaction temperature of the deposit species to cause the deposit species to become a material deposited on the semiconductor substrate.
Claim 2
Dependent Claim
75 words
A thin film forming method, comprising the steps of: supporting a semiconductor substrate having a trench or an unevenness thereon in a reaction vessel; introducing a reactive gas into the reaction vessel; activating the reactive gas to form a deposit species; exhausting the interior of the reaction vessel; and cooling the semiconductor substrate below the liquefaction temperature of the deposit species to cause the deposit species to become a material deposited on the semiconductor substrate.
Claim 3
Dependent Claim
20 words
The thin film forming method of claim 1 wherein the deposit material includes an active species of the reactive gas.
Claim 4
Dependent Claim
22 words
The thin film forming method of claim 1 wherein the deposit material includes reaction products produced during activation of the reactive gas.
Claim 5
Dependent Claim
22 words
The thin forming method of claim 1 wherein the step of activating the reactive gas includes the step of generating a plasma.
Claim 6
Dependent Claim
25 words
The thin film forming method of claim 1 wherein the step of activating the reactive gas includes the step of thermally activating the reactive gas.
Claim 7
Dependent Claim
25 words
The thin film forming method of claim 1 wherein the step of activating the reactive gas includes the step of light activating the reactive gas.
Claim 8
Dependent Claim
26 words
The thin film forming method of claim 1 wherein the step of activating the reactive gas includes the step of electron beam activating the reactive gas.
Claim 9
Dependent Claim
24 words
The thin film forming method of claim 6 wherein the step of light activating includes the step of laser beam activating the reactive gas.
Claim 10
Dependent Claim
17 words
The thin film forming method of claim 1, further comprising the step of heating the semiconductor substrate.
Claim 11
Dependent Claim
23 words
The thin film forming method of claim 1 wherein the reactive gas includes an impurity to change the conductivity of the semiconductor substrate.
Claim 12
Dependent Claim
19 words
The thin film forming method of claim 1 wherein the aspect ratio of the trench is one or more.
Claim 13
Dependent Claim
22 words
The thin film forming method of claim 1 wherein the reactive gas is activated within the reaction vessel supported the substrate therein.
Claim 14
Dependent Claim
26 words
The thin film forming method of claim 1 wherein the reactive gas is activated in the other portion of the reaction vessel supporting the substrate therein.
Claim 15
Dependent Claim
15 words
The thin film forming method of claim 1 wherein the deposit material is an insulator.
Claim 16
Dependent Claim
14 words
The thin film forming method of claim 1 wherein the deposit material is semiconductor.
Claim 17
Dependent Claim
14 words
The thin film forming method of claim 1 wherein the deposit material is polymer.
Claim 18
Dependent Claim
15 words
The thin film forming method of claim 1 wherein the deposit material is a metal.
Claim 19
Dependent Claim
16 words
The thin film forming method of claim 1 wherein the substrate has a mask formed thereon.
Claim 20
Dependent Claim
13 words
The thin film forming method of claim 14 wherein insulator is silicon oxide.
Claim 21
Dependent Claim
20 words
The thin film forming method of claim 1 wherein the deposit species is heated after the deposit species is formed.
Claim 22
Dependent Claim
12 words
The thin film forming method of claim 20 wherein heating is instantaneous.
Claim 23
Dependent Claim
18 words
The thin film forming method of claim 1 wherein the substrate is supported electrostatically by a sample holder.
Claim 24
Dependent Claim
18 words
The thin film forming method of claim 1 wherein the substrate and the reactive gas are vibrated relatively.
Claim 25
Dependent Claim
25 words
The thin film forming method of claim 1 wherein the step of introducing the reactive gas includes the step of supplying two types of gases.
Claim 26
Dependent Claim
13 words
The thin film forming method of claim 24 wherein the substrate is semiconductor.
Claim 27
Dependent Claim
17 words
The thin film forming method of claim 24, further comprising the step of heating the semiconductor substrate.
Claim 28
Dependent Claim
19 words
The thin film forming method of claim 24 wherein the aspect ratio of the trench is one or more.
Claim 29
Dependent Claim
15 words
The thin film forming method of claim 24 wherein the deposit material is an insulator.
Claim 30
Dependent Claim
14 words
The thin film forming method of claim 24 wherein the deposit material is semiconductor.
Claim 31
Dependent Claim
14 words
The thin film forming method of claim 24 wherein the deposit material is polymer.
Claim 32
Dependent Claim
14 words
The thin film forming method of claim 24 wherein the deposit material is metal.
Claim 33
Dependent Claim
16 words
The thin film forming method of claim 24 wherein the substrate has a mask formed thereon.
Claim 34
Dependent Claim
15 words
The thin film forming method of claim 25 wherein the deposit material is an insulator.
Claim 35
Dependent Claim
13 words
The thin film forming method of claim 33 wherein insulator is silicon oxide.
Claim 36
Dependent Claim
20 words
The thin film forming method of claim 24 wherein the deposit species is heated after the deposit species is formed.
Claim 37
Dependent Claim
12 words
The thin film forming method of claim 34 wherein heating is instantaneous.
Claim 38
Dependent Claim
18 words
The thin film forming method of claim 24 wherein the substrate is supported electrostatically by a sample holder.
Claim 39
Dependent Claim
18 words
The thin film forming method of claim 24 wherein the substrate and the reactive gas are vibrated relatively.
Claim 40
Dependent Claim
23 words
The thin film forming method of claim 24 wherein the first reactive gas is activated within the reaction vessel supporting the substrate therein.
Claim 41
Dependent Claim
27 words
The thin film forming method of claim 24 wherein the first reactive gas is activated in the other portion of the reaction vessel supporting the substrate therein.
Claim 42
Dependent Claim
29 words
The thin film forming method of claim 24 wherein the first reactive gas includes at least one of oxygen, nitrogen, hydrogen or a gas containing at least halogen element.
Claim 43
Dependent Claim
20 words
The thin film forming method of claim 24 wherein the first reactive gas includes at least one of inert gases.
Claim 44
Dependent Claim
43 words
The thin film forming method of claim 24 wherein the first reactive gas includes at least one of oxygen, nitrogen or hydrogen, and the second reactive gas includes at least one element included in the II to VI groups of the periodic table.
Claim 45
Dependent Claim
48 words
The thin film forming method of claim 24 wherein the first reactive gas includes at least one of hydrogen, nitrogen or a gas containing at least halogen element and the second reactive gas includes at least one of organic compound, halide or carbonyl of the metal or semiconductor.
Claim 46
Dependent Claim
22 words
The thin film forming method of claim 24 wherein the second reactive gas includes one of tetramethyl silane, hexamethyldisiloxane or trimetyl silanol.
Claim 47
Dependent Claim
15 words
The thin film forming method of claim 45 wherein the first reactive gas is oxygen.
Claim 48
Dependent Claim
52 words
The thin film forming method of claim 46 wherein the flow ratio of the first reactive gas to the second reactive gas at 2 or more and the temperature of the substrate from 20° C. to -100° C. and keeping the total internal pressure of the reaction vessel less than 10 Torr.
Claim 49
Dependent Claim
29 words
The thin film forming method of claim 45 wherein the step of activating includes the step of radiating the laser beam with the power of 330 Joul/cm 2 sec.
Claim 50
Dependent Claim
39 words
The thin film forming method of claim 47 wherein the step of activating includes the step of radiating the laser beam with the wave length of 200 nm or less and with the power of 330 Joul/cm 2 sec.
Claim 51
Dependent Claim
44 words
The thin film forming method of claim 47 wherein the pressure in the reaction vessel and the temperature of the substrate are set at a condition where the contact angle of the liquefied globule of the second reactive gas and the substrate becomes acute.
Claim 52
Dependent Claim
31 words
The thin film forming method of claim 47 wherein after the formation of the deposit material, the substrate is heated at 300° C. or more with flowing oxygen or oxygen radical.
References Cited (Backward Citations)
US4009680A
Cited
US4743570A
Cited
EP0049586A1
Cited
US4501225A
Cited
US4673592A
Cited
US4675205A
Cited
US4747928A
Cited
US4800174A
Cited
JPS6358925A
Cited
JPS63125680A
Cited
JPH02277238A
Cited
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| 3.5 Years (Year 4) | 1995-10-20 | 1996-04-20 | 1996-10-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-10-20 | 2000-04-20 | 2000-10-20 | $3760.00 | Window Closed / Lapsed |
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