US4743570A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of thermal treatment of a wafer in an evacuated environment
Assignee: Varian Semiconductor Equipment Associates Inc
•
Filing: 1987-07-10
•
Granted: 1988-05-10
•
Expires: 2007-07-10
Abstract
Abstract In a vacuum chamber wafer treating apparatus a wafer is heated or cooled by introducing a gas at a pressure of approximately 100 to 1000 microns in a region between the wafer and a heating element or heat sink. The gas conducts thermal energy between the wafer and heating element or heat sink.
Inventors
- 👤 Lawrence T. Lamont, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 18:58
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/30; H10P72/33; H10P72/3308; C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/50; C23C14/54; C23C14/541; C23C14/56; H10P72/04; H10P72/0431; H10P72/0434; H10P72/70; H10P72/76; H10P72/7602; Y; Y10; Y10S; Y10S148/00; Y10S148/083
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
109 words
The method of treating a wafer-like article in a vacuum chamber comprising the steps of: positioning the article and a heat exchanging structure at a station within the vacuum chamber; engaging the article and said heat exchanging structure to be in pressing contact, and maintaining a gas under pressure which is substantially less than atmospheric pressure between the article and said structure to facilitate the conduction of heat between the article and said structure by said gas, said gas being inhibited from flowing from between said structure and article while said article and said structure are in contacting relationship and said heat conduction by said gas is being facilitated.
Claim 2
Independent Claim
109 words
The method of treating a wafer-like article in a vacuum chamber comprising the steps of: positioning the article and a heat exchanging structure at a station within the vacuum chamber; engaging the article and said heat exchanging structure to be in pressing contact, and maintaining a gas under pressure which is substantially less than atmospheric pressure between the article and said structure to facilitate the conduction of heat between the article and said structure by said gas, said gas being inhibited from flowing from between said structure and article while said article and said structure are in contacting relationship and said heat conduction by said gas is being facilitated.
Claim 3
Dependent Claim
25 words
The method of claim 1 in which gas pressure between said article and said heat-exchanging structure is greater than the pressure within said vacuum chamber.
Claim 4
Dependent Claim
39 words
The method of claim 1 in which said article comprises a wafer having two faces, and said gas is maintained under said pressure substantially less than atmospheric between substantially one entire face of said wafer and said heat-exchanging structure.
Claim 5
Dependent Claim
15 words
The method of claim 1 in which said pressure is less than approximately 1000 microns.
Claim 6
Dependent Claim
15 words
The method of claim 1 in which said pressure is greater than approximately 100 microns.
Claim 7
Dependent Claim
15 words
The method of claim 1 in which said pressure is approximately 100 to 1000 microns.
Claim 8
Dependent Claim
44 words
The method of claim 3 which further includes the step of discontinuing the pressing contact between said wafer and said structure upon completion of wafer treatment at said station to admit gas remaining between said wafer and said heat-exchanging structure into said vacuum chamber.
References Cited (Backward Citations)
US3062507A
Cited
US3190262A
Cited
US3250694A
Cited
US3430455A
Cited
US3421331A
Cited
US3562142A
Cited
US3525229A
Cited
US3624391A
Cited
US3566960A
Cited
US3717201A
Cited
US3818982A
Cited
US3901183A
Cited
US4008683A
Cited
US3920233A
Cited
US4017403A
Cited
US4067042A
Cited
US3993123A
Cited
US4082958A
Cited
US4139051A
Cited
US4155011A
Cited
US4118630A
Cited
US4194233A
Cited
US4162401A
Cited
US4282924A
Cited
US4297190A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-05-10 | 1991-11-09 | 1992-05-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-05-10 | 1995-11-09 | 1996-05-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-05-10 | 1999-11-09 | 2000-05-10 | $7700.00 | Window Closed / Lapsed |