US6072227A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Low power method of depositing a low k dielectric with organo silane
Assignee: Applied Materials Inc
•
Filing: 1998-07-13
•
Granted: 2000-06-06
•
Expires: 2018-07-13
Abstract
Abstract A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas at a low RF power level from 20-200 W. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH 3 SiH 3 , and nitrous oxide, N 2 O, at a pulsed RF power level from 50-200 W during 10-30% of the duty cycle.
Inventors
- 👤 Wai-Fan Yau
- 👤 David Cheung
- 👤 Shin-puu Jeng
- 👤 Kuowei Liu
- 👤 Yung-Cheng Yu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 05:56
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/077; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6516; H10P14/6548; H10W20/075; H10W20/081; H10W20/084; H10W20/086; H10W20/093; H10W20/097; H10W20/098; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/6339; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/6684; H10P14/6686; H10P14/69; H10P14/6903; H10P14/6905; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
76 words
A dual damascene structure, comprising: a first dielectric layer defining one or more vertical interconnects; a low k patterned etch stop overlying the first dielectric layer and defining openings for the one or more vertical interconnects, the etch stop comprising an oxidized organo silane having a carbon content from about 1% to about 50% by atomic weight; and a second dielectric layer overlying the patterned low k etch stop and defining one or more horizontal interconnects.
Claim 2
Dependent Claim
76 words
A dual damascene structure, comprising: a first dielectric layer defining one or more vertical interconnects; a low k patterned etch stop overlying the first dielectric layer and defining openings for the one or more vertical interconnects, the etch stop comprising an oxidized organo silane having a carbon content from about 1% to about 50% by atomic weight; and a second dielectric layer overlying the patterned low k etch stop and defining one or more horizontal interconnects.
Claim 3
Dependent Claim
15 words
The structure of claim 1 wherein the first and the second dielectric layers comprise parylene.
Claim 4
Dependent Claim
75 words
A dual damascene structure, comprising: a first low k dielectric layer defining one or more vertical interconnects; a patterned etch stop overlying the first low k dielectric layer and defining the one or more vertical interconnects; and a second dielectric layer overlying the patterned etch stop and defining one or more horizontal interconnects, the second dielectric layer comprising an oxidized organo silane having a carbon content from about 1% to about 50% by atomic weight.
Claim 5
Dependent Claim
75 words
A dual damascene structure, comprising: a first low k dielectric layer defining one or more vertical interconnects; a patterned etch stop overlying the first low k dielectric layer and defining the one or more vertical interconnects; and a second dielectric layer overlying the patterned etch stop and defining one or more horizontal interconnects, the second dielectric layer comprising an oxidized organo silane having a carbon content from about 1% to about 50% by atomic weight.
Claim 6
Dependent Claim
15 words
The structure of claim 3 wherein the first dielectric layer comprises the oxidized organo silane.
Claim 7
Dependent Claim
73 words
An integrated circuit structure, comprising: a first dielectric layer; a low k dielectric adhesive layer having a thickness from 50 to 200 Å overlying the first dielectric layer, the adhesive layer comprising an oxidized organo silane compound having a carbon content from about 1% to about 50% by atomic weight, wherein the organo silane compound comprises at least one Si-H bond; and a second dielectric layer overlying the low k dielectric adhesive layer.
Claim 8
Dependent Claim
73 words
An integrated circuit structure, comprising: a first dielectric layer; a low k dielectric adhesive layer having a thickness from 50 to 200 Å overlying the first dielectric layer, the adhesive layer comprising an oxidized organo silane compound having a carbon content from about 1% to about 50% by atomic weight, wherein the organo silane compound comprises at least one Si-H bond; and a second dielectric layer overlying the low k dielectric adhesive layer.
Claim 9
Dependent Claim
20 words
The structure of claim 5, further comprising a silicon oxide or silicon nitride etch stop overlying the second dielectric layer.
Claim 10
Dependent Claim
157 words
A dual damascene structure, comprising: a dielectric layer defining one or more vertical interconnects; a first adhesive layer having a thickness from about 50 to about 200 Å overlying the first dielectric layer and defining the one or more vertical interconnects, the first adhesive layer comprising an oxidized organo silane film having a carbon content from about 1% to about 50% by atomic weight; a silicon oxide or silicon nitride etch stop overlying the first adhesive layer and defining one or more openings for the one or more vertical interconnects; a second adhesive layer having a thickness from about 50 to about 200 Å overlying the etch stop and defining one or more horizontal interconnects, the second adhesive layer comprising an oxidized organo silane film having a carbon content from about 1% to about 50% by atomic weight; and a second dielectric layer overlying the second adhesive layer and further defining the one or more horizontal interconnects.
Claim 11
Dependent Claim
157 words
A dual damascene structure, comprising: a dielectric layer defining one or more vertical interconnects; a first adhesive layer having a thickness from about 50 to about 200 Å overlying the first dielectric layer and defining the one or more vertical interconnects, the first adhesive layer comprising an oxidized organo silane film having a carbon content from about 1% to about 50% by atomic weight; a silicon oxide or silicon nitride etch stop overlying the first adhesive layer and defining one or more openings for the one or more vertical interconnects; a second adhesive layer having a thickness from about 50 to about 200 Å overlying the etch stop and defining one or more horizontal interconnects, the second adhesive layer comprising an oxidized organo silane film having a carbon content from about 1% to about 50% by atomic weight; and a second dielectric layer overlying the second adhesive layer and further defining the one or more horizontal interconnects.
Claim 12
Dependent Claim
21 words
The structure of claim 7 wherein the first dielectric layer and the second dielectric layer comprise a low k dielectric material.
Claim 13
Dependent Claim
20 words
The dual damascene structure of claim 1, wherein the oxidized organo silane is oxidized methyl silane or oxidized dimethyl silane.
Claim 14
Dependent Claim
22 words
The dual damascene structure of claim 1, wherein the oxidized organo silane film has a dielectric constant of about 3 or less.
Claim 15
Dependent Claim
16 words
The dual damascene structure of claim 1, wherein the organo silane compound has one methyl group.
Claim 16
Dependent Claim
15 words
The dual damascene structure of claim 1, wherein the organo silane has four methyl groups.
Claim 17
Dependent Claim
22 words
The dual damascene structure of claim 3, wherein the oxidized organo silane film has a dielectric constant of about 3 or less.
Claim 18
Dependent Claim
16 words
The dual damascene structure of claim 3, wherein the organo silane compound has one methyl group.
Claim 19
Dependent Claim
15 words
The dual damascene structure of claim 3, wherein the organo silane has four methyl groups.
Claim 20
Dependent Claim
23 words
The integrated circuit device of claim 5, wherein the oxidized organo silane is oxidized methyl silane, oxidized dimethyl silane, or oxidized trimethyl silane.
Claim 21
Dependent Claim
22 words
The integrated circuit structure of claim 5, wherein the oxidized organo silane film has a dielectric constant of about 3 or less.
Claim 22
Dependent Claim
16 words
The integrated circuit structure of claim 5, wherein the organo silane compound has one methyl group.
Claim 23
Dependent Claim
15 words
The integrated circuit structure of claim 5, wherein the organo silane has four methyl groups.
Claim 24
Dependent Claim
88 words
A dual damascene structure, comprising: a first low k dielectric layer defining one or more vertical interconnects; a patterned etch stop overlying the first low k dielectric layer and defining openings for the one or more vertical interconnects; and a second dielectric layer overlying the patterned etch stop and defining one or more horizontal interconnects, the second dielectric layer comprising a plasma oxidized organo silane having a carbon content from about 1% to about 50% by atomic weight, wherein the organo silane has at least one Si-H bond.
Claim 25
Dependent Claim
88 words
A dual damascene structure, comprising: a first low k dielectric layer defining one or more vertical interconnects; a patterned etch stop overlying the first low k dielectric layer and defining openings for the one or more vertical interconnects; and a second dielectric layer overlying the patterned etch stop and defining one or more horizontal interconnects, the second dielectric layer comprising a plasma oxidized organo silane having a carbon content from about 1% to about 50% by atomic weight, wherein the organo silane has at least one Si-H bond.
Claim 26
Dependent Claim
17 words
The dual damascene structure of claim 20, wherein the first dielectric layer comprises the oxidized organo silane.
Claim 27
Dependent Claim
22 words
The dual damascene structure of claim 20, wherein the oxidized organo silane film has a dielectric constant of about 3 or less.
Claim 28
Dependent Claim
16 words
The dual damascene structure of claim 20, wherein the organo silane compound has one methyl group.
Claim 29
Dependent Claim
15 words
The dual damascene structure of claim 20, wherein the organo silane has four methyl groups.
Claim 30
Dependent Claim
155 words
A dual damascene structure, comprising: a first dielectric layer defining one or more vertical interconnects; a low k patterned etch stop overlying the first dielectric layer and further defining the one or more vertical interconnects, the etch stop comprising an oxidized organo silane having a carbon content from about 1% to about 50% by atomic weight; and a second dielectric layer overlying the patterned low k etch stop and defining one or more horizontal interconnects, wherein the organo silane has the structure SiH a (CH 3 ) b (C 2 H 5 ) c (C 6 H 5 ) d , where a=1 to 3, b=0 to 3, c=0 to 3, d=0 to 3, and a+b+c+d=4, or the structure Si 2 H e (CH 3 ) f (C 2 H 5 ) g (C 6 H 5 ) h , where e=1 to 5, f=0 to 5, g=0 to 5, h=0 to 5, and e+f+g+h=6.
Claim 31
Dependent Claim
155 words
A dual damascene structure, comprising: a first dielectric layer defining one or more vertical interconnects; a low k patterned etch stop overlying the first dielectric layer and further defining the one or more vertical interconnects, the etch stop comprising an oxidized organo silane having a carbon content from about 1% to about 50% by atomic weight; and a second dielectric layer overlying the patterned low k etch stop and defining one or more horizontal interconnects, wherein the organo silane has the structure SiH a (CH 3 ) b (C 2 H 5 ) c (C 6 H 5 ) d , where a=1 to 3, b=0 to 3, c=0 to 3, d=0 to 3, and a+b+c+d=4, or the structure Si 2 H e (CH 3 ) f (C 2 H 5 ) g (C 6 H 5 ) h , where e=1 to 5, f=0 to 5, g=0 to 5, h=0 to 5, and e+f+g+h=6.
Claim 32
Dependent Claim
109 words
A dual damascene structure, comprising: a first dielectric layer defining one or more vertical interconnects; a low k etch stop overlying the first dielectric layer and defining openings for the one or more vertical interconnects, the low k etch stop comprising an oxidized organo silane having a carbon content from about 1% to about 50% by atomic weight, wherein the organo silane has the structure Si 2 H m (CH 3 ) 6-m , where m=1 to 5, or SiH n (CH 3 ) 4-n , where n=1 to 3; and a second dielectric layer overlying the patterned low k etch stop and defining one or more horizontal interconnects.
Claim 33
Dependent Claim
109 words
A dual damascene structure, comprising: a first dielectric layer defining one or more vertical interconnects; a low k etch stop overlying the first dielectric layer and defining openings for the one or more vertical interconnects, the low k etch stop comprising an oxidized organo silane having a carbon content from about 1% to about 50% by atomic weight, wherein the organo silane has the structure Si 2 H m (CH 3 ) 6-m , where m=1 to 5, or SiH n (CH 3 ) 4-n , where n=1 to 3; and a second dielectric layer overlying the patterned low k etch stop and defining one or more horizontal interconnects.
References Cited (Backward Citations)
JPS60111480A
Cited
US4789648A
Cited
US4828880A
Cited
JPS6450429A
Cited
US4798629A
Cited
US4973511A
Cited
EP0469926A1
Cited
US5250473A
Cited
US5040046A
Cited
EP0522799A2
Cited
US5246887A
Cited
US5204141A
Cited
JPH05267480A
Cited
US5598027A
Cited
US5739579A
Cited
US5753564A
Cited
US5593741A
Cited
US5465680A
Cited
US5494712A
Cited
US5364666A
Cited
US5554570A
Cited
US5888593A
Cited
US5618619A
Cited
US5508368A
Cited
US5858880A
Cited
US5789319A
Cited
US5563105A
Cited
EP0711817A2
Cited
US5683940A
Cited
US5700720A
Cited
EP0721019A2
Cited
US5578523A
Cited
US5637351A
Cited
EP0774533A1
Cited
JPH09237785A
Cited
DE19654737A1
Cited
US5693563A
Cited
US5807785A
Cited
US5834162A
Cited
US5821168A
Cited
US5891799A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-06-06 | 2003-12-06 | 2004-06-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-06-06 | 2007-12-06 | 2008-06-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-06-06 | 2011-12-06 | 2012-06-06 | $7700.00 | Window Closed / Lapsed |