US5703404A
Expired / Lapsed
US
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Semiconductor device comprising an SiOF insulative film
Assignee: Mitsubishi Electric Corp
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Filing: 1996-12-24
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Granted: 1997-12-30
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Expires: 2016-12-24
Abstract
Abstract A semiconductor device having an interlayer insulating film improved to decrease film shrinkage and film stress is provided. Metal interconnections are formed on a substrate. A silicon oxide film is provided on the substrate to cover the metal interconnections and to fill a space between the metal interconnections. The chemical formula of the silicon oxide film contains Si-F bond.
Inventors
- 👤 Masazumi Matsuura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 18:02
CPC Classifications
H; H10; H10P; H10P95/00; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/662; H10P14/668; H10P14/6681; H10P14/6682; H10P14/6922; H10P14/6924; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/077; H10W20/40; H10W20/45; H10W20/48; H10P14/6336
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
62 words
A semiconductor device, comprising: a substrate; first and second metal interconnections formed on said substrate; and a silicon oxide film formed on said substrate, and covering said first and second metal interconnections and filling a space between said first metal interconnection and said second metal interconnection, wherein the chemical formula of said silicon oxide film contains the following chemical structure unit. ##STR4##
Claim 2
Dependent Claim
62 words
A semiconductor device, comprising: a substrate; first and second metal interconnections formed on said substrate; and a silicon oxide film formed on said substrate, and covering said first and second metal interconnections and filling a space between said first metal interconnection and said second metal interconnection, wherein the chemical formula of said silicon oxide film contains the following chemical structure unit. ##STR4##
Claim 3
Dependent Claim
21 words
The semiconductor device according to claim 1, wherein the chemical formula of said silicon oxide film contains the following unit. ##STR5##
Claim 4
Dependent Claim
57 words
The semiconductor device according to claim 1, wherein an inequality a<b is established, wherein a represents that thickness of said silicon oxide film lying on said first and second metal interconnections and b represents that thickness of said silicon oxide film lying on said substrate and lying between said first metal interconnection and said second metal interconnection.
Claim 5
Dependent Claim
18 words
The semiconductor device according to claim 1, wherein said silicon oxide film contains boron atoms or phosphorus atoms.
Claim 6
Dependent Claim
23 words
The semiconductor device according to claim 1, wherein said boron atoms or said phosphorus atoms are contained by five to ten mol %.
Claim 7
Dependent Claim
19 words
The semiconductor device according to claim 1, further comprising a plasma oxide film covering said first and second interconnections.
Claim 8
Dependent Claim
21 words
The semiconductor device according to claim 1, wherein the chemical formula of said silicon oxide film contains the following unit. ##STR6##
Claim 9
Dependent Claim
19 words
The semiconductor device according to claim 1, said chemical structure units are uniformly distributed in said silicon oxide film.
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US5429995A
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-12-29 | 2001-06-30 | 2001-12-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-12-29 | 2005-06-30 | 2005-12-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-12-29 | 2009-06-30 | 2009-12-30 | $7700.00 | Window Closed / Lapsed |