US5429995A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing silicon oxide film containing fluorine
Assignee: Toshiba Corp
•
Filing: 1993-07-16
•
Granted: 1995-07-04
•
Expires: 2013-07-16
Abstract
Abstract Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below: P≧5×10.sup.-4,P≦10.sup.-1 ×10.sup.-E/45(A) and the relationship between the ion energy E (ev) and the plasma density D (/cm 3 ) satisfies the formula B given below: D≧2×10.sup.11 ×10.sup.-E/45, 10≦E(B)
Inventors
- 👤 Yukio Nishiyama
- 👤 Rempei Nakata
- 👤 Nobuo Hayasaka
- 👤 Haruo Okano
- 👤 Riichirou Aoki
- 👤 Takahito Nagamatsu
- 👤 Akemi Satoh
- 👤 Masao Toyosaki
- 👤 Hitoshi Ito
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:53
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6516; H10P14/6548; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/077; H10W20/40; H10W20/45; H10W20/47; H10W20/48; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10P14/6924; H10P14/6927; H10P14/694; H10P14/6943; H10P14/69433
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
60 words
A method for manufacturing a semiconductor device, in which a silicon oxide film containing fluorine and at least one of nitrogen and carbon, said film acting as an insulating film for electrically isolating conductive layers included in a semiconductor device, is formed by a CVD method using a source gas containing fluorine and at least one of nitrogen and carbon.
Claim 2
Independent Claim
60 words
A method for manufacturing a semiconductor device, in which a silicon oxide film containing fluorine and at least one of nitrogen and carbon, said film acting as an insulating film for electrically isolating conductive layers included in a semiconductor device, is formed by a CVD method using a source gas containing fluorine and at least one of nitrogen and carbon.
Claim 3
Dependent Claim
45 words
The method according to claim 1, wherein at least one gas selected from a group consisting of HSi(N(CH 3 ) 2 ) 3 , Si(N(Ch 3 ) 2 ) 4 and (CH 3 ) 3 SiN 3 is used as a source gas containing nitrogen.
Claim 4
Dependent Claim
29 words
The method according to claim 1, wherein said source gas containing fluorine is an organic silane gas having the formula: FSi(OR) 3 , wherein R represents an alkyl group.
Claim 5
Dependent Claim
18 words
The method according to claim 1, wherein said source gas is used in combination with an oxidizing gas.
Claim 6
Dependent Claim
25 words
The method according to claim 4, wherein said oxidizing gas is a member selected from the group consisting of O 2 and NO 2 .
Claim 7
Independent Claim
101 words
A method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film acting as an insulating film for electrically isolating conductive layers included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below: P≧5×10.sup.-4, P≦10.sup.-1 ×10.sup.-E/45(A) and the relationship between the ion energy E (eV) and the plasma density (D (/cm 3 ) satisfies the formula B given below: D≧2≦10.sup.11 ×10.sup.-E/45,10≦E(B)
Claim 8
Independent Claim
101 words
A method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film acting as an insulating film for electrically isolating conductive layers included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below: P≧5×10.sup.-4, P≦10.sup.-1 ×10.sup.-E/45(A) and the relationship between the ion energy E (eV) and the plasma density (D (/cm 3 ) satisfies the formula B given below: D≧2≦10.sup.11 ×10.sup.-E/45,10≦E(B)
Claim 9
Dependent Claim
15 words
The method according to claim 6, wherein said ion energy is 100 eV or less.
Claim 10
Dependent Claim
17 words
The method according to claim 6, wherein said plasma CVD method is a magnetron plasma CVD method.
Claim 11
Dependent Claim
18 words
The method according to claim 6, wherein said plasma CVD method is a helicon wave plasma CVD method.
Claim 12
Dependent Claim
19 words
The method according to claim 6, wherein said plasma CVD method is an electron beam excited plasma CVD method.
References Cited (Backward Citations)
JPS5930130A
Cited
JPS62293619A
Cited
JPS6362238A
Cited
JPH01255664A
Cited
JPH03268429A
Cited
US5215787A
Cited
US5288518A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-07-03 | 1999-01-02 | 1999-07-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-07-03 | 2003-01-02 | 2003-07-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-07-03 | 2007-01-02 | 2007-07-04 | $7700.00 | Window Closed / Lapsed |