Patent US1961794A successfully refreshed from Google Patents.
EP0935283A2
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Silicone polymer insulation film on semiconductor substrate and method for forming the film
Assignee: ASM Japan KK
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Filing: 1999-02-04
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Granted: —
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Expires: 2019-02-04
Abstract
Abstract A method for forming a silicone polymer insulation film having low relative dielectric constant, high thermal stability and high humidity-resistance on a semiconductor substrate is applied to a plasma CVD apparatus. The first step is directly vaporizing a silicon-containing hydrocarbon compound expressed by the general formula Si α O β C x H y (α, β, x, and y are integers) and then introducing the vaporized compound to the reaction chamber of the plasma CVD apparatus. The silicon-containing hydrocarbon compound has at most two O-C n H 2n+1 bonds and at least two hydrocarbon radicals bonded to the silicon. The next step is introducing additive gas into the reaction chamber. The residence time of the material gas is lengthened by reducing the total flow of the reaction gas, in such a way as to forme a silicone polymer film having a micropore porous structure with low relative dielectric constant.
Inventors
- 👤 Nobuo Matsuki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 01:50
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; B; B05; B05D; B05D1/00; B05D1/62; C; C09; C09D; C09D4/00; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; H10W; H10W74/00; H10W74/40; H10W74/47; H10W74/476; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; Y; Y10; Y10S; Y10S257/00; Y10S257/914
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
170 words
A method for forming a silicone polymer insulation film on a
semiconductor substrate by plasma treatment, comprising the steps of: directly vaporizing a silicon-containing hydrocarbon compound to
produce a material gas for silicone polymer, said silicon-containing
hydrocarbon having two alkoxy groups or less or having no alkoxy group; introducing the material gas into a reaction chamber for plasma CVD
process wherein a semiconductor substrate is placed; introducing an additive gas for controlling plasma reaction into the
reaction chamber, said additive gas being selected to provide a
predetermined ratio of O:Si in a silicone polymer film when formed; activating plasma polymerization reaction in the reaction chamber
where a reaction gas composed of the material gas and the additive gas is
present, to form a silicone polymer film having a relative dielectric constant
on the semiconductor substrate; and controlling flow of the reaction gas to lengthen residence time of the
reaction gas in the reaction chamber until the relative dielectric constant of
the silicone polymer film is lower than a predetermined value.
Claim 2
Dependent Claim
22 words
The method according to Claim 1, wherein the residence time is
determined by correlating the relative dielectric constant with the residence time.
Claim 3
Dependent Claim
21 words
The method according to Claim 1, wherein the alkoxy present in the
silicon-containing hydrocarbon compound has 1 to 3 carbon atoms.
Claim 4
Dependent Claim
21 words
The method according to Claim 1, wherein the hydrocarbon present
in the silicon-containing hydrocarbon compound has 1 to 6 carbon atoms.
Claim 5
Dependent Claim
17 words
The method according to Claim 1, wherein the silicon-containing
hydrocarbon compound has 1 to 3 silicon atoms.
Claim 6
Dependent Claim
53 words
The method according to Claim 1, wherein the silicon-containing
hydrocarbon compound has formula Si α O α-1 R 2α-β+2 (OC n H 2n+1 ) β wherein α is an
integer of 1-3, β is 0, 1, or 2, n is an integer of 1-3, and R is C 1-6 hydrocarbon
attached to Si.
Claim 7
Dependent Claim
19 words
The method according to Claim 1, wherein the additive gas comprises
at least either argon (Ar) or Helium (He).
Claim 8
Dependent Claim
43 words
The method according to Claim 1, wherein the additive gas comprises
either an oxidizing agent or a reducing agent, which agent is used being
determined by the ratio of Si:O in the material gas to form a silicone polymer film
having predetermined properties.
Claim 9
Dependent Claim
44 words
The method according to Claim 7, wherein the additive gas further
comprises either an oxidizing agent or a reducing agent, which agent is used being
determined by the ratio of Si:O in the material gas to form a silicone polymer film
having predetermined properties.
Claim 10
Dependent Claim
59 words
The method according to Claim 1, wherein the silicon-containing
hydrocarbon compound is selected from the group consisting of: wherein R1, R2, R3, R4, R5, and R6 are independently CH 3 , C 2 H 3 , C 2 H 5 , C 3 H 7 or
C 6 H 5 , and m and n are integers of 1-6.
Claim 11
Dependent Claim
29 words
The method according to Claim 1, wherein the flow of the reaction
gas is controlled to render the relative dielectric constant of the silicone polymer
film lower than 3.30.
Claim 12
Dependent Claim
37 words
The method according to Claim 1, wherein the predetermined value
of the residence time of the reaction gas is determined by correlating the residence
time of the reaction gas with the relative dielectric constant of the film.
References Cited (Backward Citations)
No citation records indexed.
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