US6303523B2
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Plasma processes for depositing low dielectric constant films
Assignee: Applied Materials Inc
•
Filing: 1998-11-04
•
Granted: 2001-10-16
•
Expires: 2018-11-04
Abstract
Abstract A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at a constant RF power level from about 10 W to about 150 W, or a pulsed RF power level from about 20 W to about 250 W during 10% to 30% of the duty cycle.
Inventors
- 👤 David Cheung
- 👤 Wai-Fan Yau
- 👤 Robert P. Mandal
- 👤 Shin-puu Jeng
- 👤 Kuo-Wei Liu
- 👤 Yung-Cheng Lu
- 👤 Michael Barnes
- 👤 Ralf B. Willecke
- 👤 Farhad Moghadam
- 👤 Tetsuya Ishikawa
- 👤 Tze Wing Poon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:51
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6516; H10P14/6548; H10P14/66; H10P14/668; H10P14/6681; H10W20/074; H10W20/075; H10W20/077; H10W20/081; H10W20/084; H10W20/085; H10W20/086; H10P14/6336; H10P14/665; H10P14/6682; H10P14/6684; H10P14/6686; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10W20/0886; Y; Y10; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24926; Y10T428/31504; Y10T428/31652; Y10T428/31663
Claims Analysis
Total Claims: 60
Claim 1
Independent Claim
97 words
A process for depositing a low dielectric constant film on a semiconductor substrate, comprising reacting one or more silicon compounds with an oxidizing gas while applying RF power to deposit the low dielectric constant film on the semiconductor substrate, wherein each silicon compound comprises from one to three alkyl groups bonded to silicon and at least one silicon-hydrogen bond, and wherein the low dielectric constant film is located between conductive materials and retains sufficient silicon-carbon bonds to have a carbon content from 1% to 50% by atomic weight and a dielectric constant of about 3 or less.
Claim 2
Dependent Claim
97 words
A process for depositing a low dielectric constant film on a semiconductor substrate, comprising reacting one or more silicon compounds with an oxidizing gas while applying RF power to deposit the low dielectric constant film on the semiconductor substrate, wherein each silicon compound comprises from one to three alkyl groups bonded to silicon and at least one silicon-hydrogen bond, and wherein the low dielectric constant film is located between conductive materials and retains sufficient silicon-carbon bonds to have a carbon content from 1% to 50% by atomic weight and a dielectric constant of about 3 or less.
Claim 3
Dependent Claim
12 words
The process of claim 1 , wherein the oxidizing gas comprises oxygen.
Claim 4
Dependent Claim
31 words
The method of claim 1 , wherein the oxidizing gas and the one or more silicon compounds are reacted at a substrate temperature from about −20° C. to about 400° C.
Claim 5
Dependent Claim
17 words
The method of claim 1 , wherein the low dielectric constant film is located between interconnect lines.
Claim 6
Dependent Claim
18 words
The method of claim 1 , wherein the RF power is provided by a mixed frequency power source.
Claim 7
Dependent Claim
35 words
The method of claim 5 , wherein the mixed frequency power source provides RF power at a high frequency of about 13.56 MHz and a low frequency of about 360 KHz to about 1 MHz.
Claim 8
Dependent Claim
14 words
The method of claim 1 , wherein the oxidizing gas comprises N 2 O.
Claim 9
Dependent Claim
14 words
The method of claim 1 , wherein the low dielectric constant film is annealed.
Claim 10
Dependent Claim
18 words
The method of claim 1 , wherein a dielectric material is deposited on the low dielectric constant film.
Claim 11
Dependent Claim
15 words
The method of claim 1 , wherein the one or more silicon compounds comprises methylsilane.
Claim 12
Dependent Claim
99 words
A process for depositing a low dielectric constant film, comprising: depositing a low dielectric constant film by reacting a compound comprising at least one silicon atom with an oxidizing gas while applying RF power, wherein each silicon atom is bonded to one, two, or three alkyl groups and to at least one hydrogen atom, and wherein the film retains sufficient silicon-carbon bonds to have a carbon content from 1% to 50% by atomic weight and a dielectric constant of about 3 or less; etching at least one opening in the film; and depositing a conductive material in the opening.
Claim 13
Dependent Claim
99 words
A process for depositing a low dielectric constant film, comprising: depositing a low dielectric constant film by reacting a compound comprising at least one silicon atom with an oxidizing gas while applying RF power, wherein each silicon atom is bonded to one, two, or three alkyl groups and to at least one hydrogen atom, and wherein the film retains sufficient silicon-carbon bonds to have a carbon content from 1% to 50% by atomic weight and a dielectric constant of about 3 or less; etching at least one opening in the film; and depositing a conductive material in the opening.
Claim 14
Dependent Claim
22 words
The process of claim 11 , wherein the compound is selected from the group consisting of methylsilane, dimethylsilane, trimethylsilane, and combinations thereof.
Claim 15
Dependent Claim
12 words
The process of claim 11 , wherein the conductive material is copper.
Claim 16
Dependent Claim
23 words
The method of claim 11 , wherein the film is deposited at a substrate temperature from about −20° C. to about 400° C.
Claim 17
Dependent Claim
16 words
The method of claim 11 , wherein the opening in the film is an interconnect line.
Claim 18
Dependent Claim
17 words
The method of claim 11 , wherein the oxidizing gas comprises O 2 or N 2 O.
Claim 19
Dependent Claim
11 words
The method of claim 11 , wherein the compound is methylsilane.
Claim 20
Dependent Claim
11 words
The method of claim 11 , wherein the compound is trimethylsilane.
Claim 21
Independent Claim
66 words
A method for depositing a low dielectric constant film, comprising: depositing a low dielectric constant film by reacting trimethylsilane with an oxidizing gas while applying RF power, wherein the film comprises a carbon content from 1% to 50% by atomic weight and a dielectric constant of about 3 or less; etching at least one opening in the film; and depositing a conductive material in the opening.
Claim 22
Independent Claim
66 words
A method for depositing a low dielectric constant film, comprising: depositing a low dielectric constant film by reacting trimethylsilane with an oxidizing gas while applying RF power, wherein the film comprises a carbon content from 1% to 50% by atomic weight and a dielectric constant of about 3 or less; etching at least one opening in the film; and depositing a conductive material in the opening.
Claim 23
Dependent Claim
21 words
The method of claim 19 , wherein the conditions comprise a substrate temperature from about −20° C. to about 400° C.
Claim 24
Dependent Claim
14 words
The method of claim 19 , wherein the oxidizing gas comprises O 2 .
Claim 25
Dependent Claim
14 words
The method of claim 19 , wherein the oxidizing gas comprises N 2 O.
Claim 26
Dependent Claim
14 words
The method of claim 19 , wherein the low dielectric constant film is annealed.
Claim 27
Dependent Claim
18 words
The method of claim 19 , wherein a dielectric material is deposited on the low dielectric constant film.
Claim 28
Independent Claim
62 words
A method for depositing a low dielectric constant film on a semiconductor substrate, comprising reacting trimethylsilane and an oxidizing gas while applying RF power to deposit a low dielectric constant film on the semiconductor substrate, wherein the low dielectric constant film has a carbon content from 1% to 50% by atomic weight, and has a dielectric constant of about 3 or less.
Claim 29
Independent Claim
62 words
A method for depositing a low dielectric constant film on a semiconductor substrate, comprising reacting trimethylsilane and an oxidizing gas while applying RF power to deposit a low dielectric constant film on the semiconductor substrate, wherein the low dielectric constant film has a carbon content from 1% to 50% by atomic weight, and has a dielectric constant of about 3 or less.
Claim 30
Dependent Claim
14 words
The method of claim 25 , wherein the oxidizing gas comprises O 2 .
Claim 31
Dependent Claim
14 words
The method of claim 25 , wherein the oxidizing gas comprises N 2 O.
Claim 32
Dependent Claim
18 words
The method of claim 25 , wherein the RF power is provided by a mixed frequency power source.
Claim 33
Dependent Claim
35 words
The method of claim 28 , wherein the mixed frequency power source provides RF power at a high frequency of about 13.56 MHz and a low frequency of about 360 KHz to about 1 MHz.
Claim 34
Dependent Claim
26 words
The method of claim 25 , wherein the low dielectric constant film is deposited at a substrate temperature from about −20° C. to about 400° C.
Claim 35
Dependent Claim
14 words
The method of claim 25 , wherein the low dielectric constant film is annealed.
Claim 36
Dependent Claim
18 words
The method of claim 25 , wherein a dielectric layer is deposited on the low dielectric constant film.
Claim 37
Independent Claim
103 words
A method for depositing a low dielectric constant film, comprising: depositing a conformal lining layer on a patterned metal layer from process gases comprising one or more silicon compounds and an oxidizing gas while applying RF power, wherein each silicon atom in each silicon compound is bonded to one, two, or three alkyl groups and to at least one hydrogen atom, and wherein the conformal lining layer retains sufficient silicon-carbon bonds to have a dielectric constant of about 3 or less and a carbon content from 1% to 50% by atomic weight; and depositing a gap filling layer on the conformal lining layer.
Claim 38
Independent Claim
103 words
A method for depositing a low dielectric constant film, comprising: depositing a conformal lining layer on a patterned metal layer from process gases comprising one or more silicon compounds and an oxidizing gas while applying RF power, wherein each silicon atom in each silicon compound is bonded to one, two, or three alkyl groups and to at least one hydrogen atom, and wherein the conformal lining layer retains sufficient silicon-carbon bonds to have a dielectric constant of about 3 or less and a carbon content from 1% to 50% by atomic weight; and depositing a gap filling layer on the conformal lining layer.
Claim 39
Dependent Claim
26 words
The method of claim 33 , wherein the one or more silicon compounds are selected from the group consisting of methylsilane, dimethylsilane, trimethylsilane, and combinations thereof.
Claim 40
Dependent Claim
20 words
The method of claim 33 , wherein the gap filling layer is deposited by reaction of methylsilane and hydrogen peroxide.
Claim 41
Dependent Claim
25 words
The method of claim 33 , wherein the conformal lining layer is deposited at a substrate temperature from about −20° C. to about 400° C.
Claim 42
Dependent Claim
16 words
The method of claim 33 , wherein the conformal lining layer is deposited on metal lines.
Claim 43
Dependent Claim
17 words
The method of claim 33 , wherein the oxidizing gas comprises O 2 or N 2 O.
Claim 44
Dependent Claim
13 words
The method of claim 33 , wherein the conformal lining layer is annealed.
Claim 45
Independent Claim
55 words
A method for depositing a low dielectric constant film on a semiconductor substrate, comprising reacting methylsilane and an oxidizing gas while applying RF power to deposit a dielectric film on a substrate, wherein the dielectric film has a carbon content from 1% to 50% by atomic weight and a dielectric constant less than about 3.
Claim 46
Independent Claim
55 words
A method for depositing a low dielectric constant film on a semiconductor substrate, comprising reacting methylsilane and an oxidizing gas while applying RF power to deposit a dielectric film on a substrate, wherein the dielectric film has a carbon content from 1% to 50% by atomic weight and a dielectric constant less than about 3.
Claim 47
Dependent Claim
14 words
The method of claim 40 , wherein the oxidizing gas comprises O 2 .
Claim 48
Dependent Claim
14 words
The method of claim 40 , wherein the oxidizing gas comprises N 2 O.
Claim 49
Dependent Claim
18 words
The method of claim 40 , wherein the RF power is provided by a mixed frequency power source.
Claim 50
Dependent Claim
35 words
The method of claim 40 , wherein the mixed frequency power source provides RF power at a high frequency of about 13.56 MHz and a low frequency of about 360 KHz to about 1 MHz.
Claim 51
Dependent Claim
26 words
The method of claim 40 , wherein the low dielectric constant film is deposited at a substrate temperature from about −20° C. to about 400° C.
Claim 52
Dependent Claim
14 words
The method of claim 40 , wherein the low dielectric constant film is annealed.
Claim 53
Dependent Claim
18 words
The method of claim 40 , wherein a dielectric layer is deposited on the low dielectric constant film.
Claim 54
Independent Claim
81 words
A method for depositing a low dielectric constant film on a semiconductor substrate, comprising reacting an organosilane compound consisting of carbon, silicon, and hydrogen with an oxidizing gas while applying RF power to deposit a dielectric film on the semiconductor substrate, wherein the organosilane compound has three alkyl groups bonded to silicon and one hydrogen bonded to silicon, and the dielectric film has a carbon content from 1% to 50% by atomic weight and a dielectric constant less than about 3.
Claim 55
Independent Claim
81 words
A method for depositing a low dielectric constant film on a semiconductor substrate, comprising reacting an organosilane compound consisting of carbon, silicon, and hydrogen with an oxidizing gas while applying RF power to deposit a dielectric film on the semiconductor substrate, wherein the organosilane compound has three alkyl groups bonded to silicon and one hydrogen bonded to silicon, and the dielectric film has a carbon content from 1% to 50% by atomic weight and a dielectric constant less than about 3.
Claim 56
Dependent Claim
14 words
The method of claim 48 , wherein the oxidizing gas comprises O 2 .
Claim 57
Dependent Claim
14 words
The method of claim 48 , wherein the oxidizing gas comprises N 2 O.
Claim 58
Dependent Claim
26 words
The method of claim 48 , wherein the low dielectric constant film is deposited at a substrate temperature from about −20° C. to about 400° C.
Claim 59
Dependent Claim
14 words
The method of claim 48 , wherein the low dielectric constant film is annealed.
Claim 60
Dependent Claim
18 words
The method of claim 48 , wherein a dielectric layer is deposited on the low dielectric constant film.
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