US5989998A
Expired / Lapsed
US
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Method of forming interlayer insulating film
Assignee: Panasonic Holdings Corp
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Filing: 1997-08-28
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Granted: 1999-11-23
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Expires: 2017-08-28
Abstract
Abstract A material containing, as a main component, an organic silicon compound represented by the following general formula: R.sup.1.sub.x Si(OR.sup.2).sub.4-x (where R 1 is a phenyl group or a vinyl group; R 2 is an alkyl group; and x is an integer of 1 to 3) is caused to undergo plasma polymerization or react with an oxidizing agent to form an interlayer insulating film composed of a silicon oxide film containing an organic component. As the organic silicon compound where R 1 is a phenyl group, there can be listed phenyltrimethoxysilane or diphenyldimethoxysilane. As the organic silicon compound where R 1 is a vinyl group, there can be listed vinyltrimethoxysilane or divinyldimethoxysilane.
Inventors
- 👤 Gaku Sugahara
- 👤 Nobuo Aoi
- 👤 Koji Arai
- 👤 Kazuyuki Sawada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:43
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; C; C23; C23C; C23C16/00; C23C16/22; C23C16/26; C23C16/30; C23C16/40; C23C16/401; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/084; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/6342; H10P14/6682; H10P14/6686; H10P14/68; H10P14/683; H10P14/687; H10P14/69215; H10P14/6924; H10P95/00; H10P95/06; H10P95/08
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
95 words
A method of forming an interlayer insulating film, wherein a material containing, as a main component, an organic silicon compound represented by the following general formula: R.sup.1.sub.x Si(OR.sup.2).sub.4-x (where R 1 is a phenyl group or a vinyl group; R 2 is an alkyl group; and x is an integer of 1 to 3) is caused to undergo plasma polymerization or react with an oxidizing agent to form an interlayer insulating film which is composed of a silicon oxide film containing an organic component and has a structure in which constituents are not regularly arranged.
Claim 2
Independent Claim
95 words
A method of forming an interlayer insulating film, wherein a material containing, as a main component, an organic silicon compound represented by the following general formula: R.sup.1.sub.x Si(OR.sup.2).sub.4-x (where R 1 is a phenyl group or a vinyl group; R 2 is an alkyl group; and x is an integer of 1 to 3) is caused to undergo plasma polymerization or react with an oxidizing agent to form an interlayer insulating film which is composed of a silicon oxide film containing an organic component and has a structure in which constituents are not regularly arranged.
Claim 3
Dependent Claim
21 words
A method of forming an interlayer insulating film according to claim 1, wherein said organic silicon compound is phenyltrimethoxysilane or diphenyldimethoxysilane.
Claim 4
Dependent Claim
21 words
A method of forming an interlayer insulating film according to claim 1, wherein said organic silicon compound is vinyltrimethoxysilane or divinyldimethoxysilane.
Claim 5
Independent Claim
89 words
A method of forming an interlayer insulating film, wherein a material containing, as a main component, an organic silicon compound represented by the following general formula: R.sup.1.sub.x SiH.sub.4-x (where R 1 is a phenyl group or a vinyl group; and x is an integer of 1 to 3) is caused to undergo plasma polymerization or react with an oxidizing agent to form an interlayer insulating film which is composed of a silicon oxide film containing an organic component and has a structure in which constituents are not regularly arranged.
Claim 6
Independent Claim
89 words
A method of forming an interlayer insulating film, wherein a material containing, as a main component, an organic silicon compound represented by the following general formula: R.sup.1.sub.x SiH.sub.4-x (where R 1 is a phenyl group or a vinyl group; and x is an integer of 1 to 3) is caused to undergo plasma polymerization or react with an oxidizing agent to form an interlayer insulating film which is composed of a silicon oxide film containing an organic component and has a structure in which constituents are not regularly arranged.
Claim 7
Dependent Claim
21 words
A method of forming an interlayer insulating film according to claim 4, wherein said organic silicon compound is phenylsilane or diphenylsilane.
Claim 8
Dependent Claim
21 words
A method of forming an interlayer insulating film according to claim 4, wherein said organic silicon compound is vinylsilane or divinylsilane.
Claim 9
Independent Claim
96 words
A method of forming an interlayer insulating film, wherein a material containing, as a main component, an organic silicon compound represented by the following general formula: R.sup.1.sub.x Si(OR.sup.2).sub.4-x (where R 1 is a phenyl group or a vinyl group; R 2 is an alkyl group; and x is an integer of 1 to 3) is caused to undergo plasma polymerization by means of plasma chemical vapor deposition to form an interlayer insulating film which is composed of a silicon oxide film containing an organic component and has a structure in which constituents are not regularly arranged.
Claim 10
Independent Claim
96 words
A method of forming an interlayer insulating film, wherein a material containing, as a main component, an organic silicon compound represented by the following general formula: R.sup.1.sub.x Si(OR.sup.2).sub.4-x (where R 1 is a phenyl group or a vinyl group; R 2 is an alkyl group; and x is an integer of 1 to 3) is caused to undergo plasma polymerization by means of plasma chemical vapor deposition to form an interlayer insulating film which is composed of a silicon oxide film containing an organic component and has a structure in which constituents are not regularly arranged.
Claim 11
Independent Claim
90 words
A method of forming an interlayer insulating film, wherein a material containing, as a main component, an organic silicon compound represented by the following general formula: R.sup.1.sub.x SiH.sub.4-x (where R 1 is a phenyl group or a vinyl group; and x is an integer of 1 to 3) is caused to undergo plasma polymerization by means of plasma chemical vapor deposition to form an interlayer insulating film which is composed of a silicon oxide film containing an organic component and has a structure in which constituents are not regularly arranged.
Claim 12
Independent Claim
90 words
A method of forming an interlayer insulating film, wherein a material containing, as a main component, an organic silicon compound represented by the following general formula: R.sup.1.sub.x SiH.sub.4-x (where R 1 is a phenyl group or a vinyl group; and x is an integer of 1 to 3) is caused to undergo plasma polymerization by means of plasma chemical vapor deposition to form an interlayer insulating film which is composed of a silicon oxide film containing an organic component and has a structure in which constituents are not regularly arranged.
References Cited (Backward Citations)
US3632386A
Cited
US4137365A
Cited
US4123308A
Cited
US4492733A
Cited
US4493855A
Cited
US4599243A
Cited
US4590117A
Cited
EP0212691A1
Cited
JPH03101123A
Cited
US5252250A
Cited
US5112025A
Cited
US5270082A
Cited
DE4126759A1
Cited
EP0560617A2
Cited
US5429995A
Cited
US5298587A
Cited
JPH07254592A
Cited
JPH08321217A
Cited
US5718967A
Cited
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