Use of plasma polymerized organosilicon films in fabrication of lift-off masks

Claim 1

A method for forming a patterned metal coating on an oxidized monocrystalline silicon substrate having at least one via hole in said oxide to expose surface adjacent portions of said substrate, and with said substrate having at least one integrated circuit formed therein in electrical communication with said via hole, comprising: A. blanket depositing a first film of a solvent soluble organic polymer over the oxidized surface and said exposed portions of said substrate, with said first polymeric film being subject to reactive ion etching in an oxygen containing ambient; B. plasma polymerizing over said first film a second oxygen barrier film of an organosilicon polymer film, with said second film being subject to etching in a fluorine containing ambient; C. heat treating said second film for about 10 to about 30 minutes at a temperature in the range of about 85° C. to about 300° C. to cross-link said second film, D. depositing over said second film a resist layer subject to etching in an oxygen containing ambient, including exposing and developing said resist to form a pattern of openings at least one of which is in register with a corresponding one of said via holes, and expose therebetween the corresponding portions of said second film; E. reactive ion etching in a fluroine containing ambient the exposed portions of said second to replicate said pattern of openings in said second film and expose corresponding portions of said first film; F. reactive ion etching in an oxygen containing ambient the said exposed portions of said first film to replicate said pattern of openings through said first film and remove said resist from remaining portions of said second film whereby said second film is treated by an oxygen plasma; G. depositing a blanket coating of a conductive film on said substrate inclusive of said openings over said substrate; and H. subjecting composite structure to said solvent to solvate said polymeric first film and concurrently lifting-off all superimposed films thereon so as to retain said metal film on the said exposed portions of said substrate.

Claim 2

A method for forming a patterned metal coating on an oxidized monocrystalline silicon substrate having at least one via hole in said oxide to expose surface adjacent portions of said substrate, and with said substrate having at least one integrated circuit formed therein in electrical communication with said via hole, comprising: A. blanket depositing a first film of a solvent soluble organic polymer over the oxidized surface and said exposed portions of said substrate, with said first polymeric film being subject to reactive ion etching in an oxygen containing ambient; B. plasma polymerizing over said first film a second oxygen barrier film of an organosilicon polymer film, with said second film being subject to etching in a fluorine containing ambient; C. heat treating said second film for about 10 to about 30 minutes at a temperature in the range of about 85° C. to about 300° C. to cross-link said second film, D. depositing over said second film a resist layer subject to etching in an oxygen containing ambient, including exposing and developing said resist to form a pattern of openings at least one of which is in register with a corresponding one of said via holes, and expose therebetween the corresponding portions of said second film; E. reactive ion etching in a fluroine containing ambient the exposed portions of said second to replicate said pattern of openings in said second film and expose corresponding portions of said first film; F. reactive ion etching in an oxygen containing ambient the said exposed portions of said first film to replicate said pattern of openings through said first film and remove said resist from remaining portions of said second film whereby said second film is treated by an oxygen plasma; G. depositing a blanket coating of a conductive film on said substrate inclusive of said openings over said substrate; and H. subjecting composite structure to said solvent to solvate said polymeric first film and concurrently lifting-off all superimposed films thereon so as to retain said metal film on the said exposed portions of said substrate.

Claim 6

A method for forming a patterned metal coating on an oxidized monocrystalline silicon substrate having at least one via hole in said oxide to expose surface adjacent portions of said substrate, and with said substrate having at least one integrated circuit formed therein in electrical communication with said via hole, comprising: A. blanket depositing a first film of a solvent soluble organic polymer over the oxidized surface and said exposed portions of said substrate, with said first polymeric film being subject to reactive ion etching in an oxygen containing ambient; B. plasma polymerizing over said first film a second oxygen barrier film of an organosilicon polymer film, with said second film being subject to etching in a fluorine containing ambient; wherein said plasma polymerizing is in ambient which includes organoboron monomers whereby said formed organosilicone polymer comprises an organoborosilicon polymer barrier film, and said oxygen plasma treatment forms a borosilicate surface layer on said barrier film C. heat treating said second film for about 10 to about 30 minutes at a temperature in the range of about 85° C. to about 300° C. to cross-link said second film; D. depositing over said second film a resist layer subject to etching in an oxygen containing ambient, including exposing and developing said resist to form a pattern of openings at least one of which is in register with a corresponding one of said via holes, and expose therebetween the corresponding portions of said second film; E. reactive ion etching in a fluorine containing ambient the exposed portions of said second to replicate said pattern of openings in said second film and expose corresponding portions of said first film; F. reactive ion etching in an oxygen containing ambient the said exposed portions of said first film to replicate said pattern of openings through said first film and remove said resist from remaining portions of said second film whereby said second film is treated by an oxygen plasma; G. depositing a blanket coating of a conductive film on said substrate inclusive of said openings over said substrate; and H. subjecting the composite structure to said solvent to solvate said polymeric first film and concurrently lifting-off all superimposed films thereon so as to retain said metal film on said exposed portions of said substrate.

Claim 7

A method for forming a patterned metal coating on an oxidized monocrystalline silicon substrate having at least one via hole in said oxide to expose surface adjacent portions of said substrate, and with said substrate having at least one integrated circuit formed therein in electrical communication with said via hole, comprising: A. blanket depositing a first film of a solvent soluble organic polymer over the oxidized surface and said exposed portions of said substrate, with said first polymeric film being subject to reactive ion etching in an oxygen containing ambient; B. plasma polymerizing over said first film a second oxygen barrier film of an organosilicon polymer film, with said second film being subject to etching in a fluorine containing ambient; wherein said plasma polymerizing is in ambient which includes organoboron monomers whereby said formed organosilicone polymer comprises an organoborosilicon polymer barrier film, and said oxygen plasma treatment forms a borosilicate surface layer on said barrier film C. heat treating said second film for about 10 to about 30 minutes at a temperature in the range of about 85° C. to about 300° C. to cross-link said second film; D. depositing over said second film a resist layer subject to etching in an oxygen containing ambient, including exposing and developing said resist to form a pattern of openings at least one of which is in register with a corresponding one of said via holes, and expose therebetween the corresponding portions of said second film; E. reactive ion etching in a fluorine containing ambient the exposed portions of said second to replicate said pattern of openings in said second film and expose corresponding portions of said first film; F. reactive ion etching in an oxygen containing ambient the said exposed portions of said first film to replicate said pattern of openings through said first film and remove said resist from remaining portions of said second film whereby said second film is treated by an oxygen plasma; G. depositing a blanket coating of a conductive film on said substrate inclusive of said openings over said substrate; and H. subjecting the composite structure to said solvent to solvate said polymeric first film and concurrently lifting-off all superimposed films thereon so as to retain said metal film on said exposed portions of said substrate.