US4138306A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for the treatment of semiconductors
Assignee: Toshiba Corp
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Filing: 1977-08-29
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Granted: 1979-02-06
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Expires: 1997-08-29
Abstract
Abstract Apparatus for the treatment of semiconductors comprises a reaction chamber for effecting the vapor phase reaction of semiconductor substrates, means for introducing a vapor phase reaction gas into the reaction chamber, a plasma generating section, means for introducing into the plasma generating section a gas suitable for the plasma treatment of the inside of the reaction chamber, microwave power applying means for activating the gas contained in the plasma generating section, conduit means for introducing the activated gas into the reaction chamber, and evacuation means, whereby the undesired deposits formed on the parts other than the semiconductor substrates can be removed easily.
Inventors
- 👤 Kazuo Niwa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 13:32
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/08; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/511
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
84 words
Apparatus for the treatment of semiconductors comprising a reaction chamber for effecting the vapor phase reaction of semiconductor substrates, means for introducing a vapor phase reaction gas into said reaction chamber, a plasma generating section, means for introducing into said plasma generating section a gas suitable for the plasma treatment of the inside of said reaction chamber, power applying means for activating the gas contained in said plasma generating section, conduit means for introducing the activated gas into said reaction chamber, and evacuation means.
Claim 2
Dependent Claim
84 words
Apparatus for the treatment of semiconductors comprising a reaction chamber for effecting the vapor phase reaction of semiconductor substrates, means for introducing a vapor phase reaction gas into said reaction chamber, a plasma generating section, means for introducing into said plasma generating section a gas suitable for the plasma treatment of the inside of said reaction chamber, power applying means for activating the gas contained in said plasma generating section, conduit means for introducing the activated gas into said reaction chamber, and evacuation means.
Claim 3
Dependent Claim
47 words
Apparatus as claimed in claim 1 wherein said means for introducing a vapor phase reaction gas is connected to said conduit means by way of a cut-off valve and said conduit means is provided with another cut-off valve on the side nearer to said plasma generating section.
Claim 4
Dependent Claim
36 words
Apparatus as claimed in claim 1 wherein said power applying means is composed of a microwave oscillator and a waveguide connected thereto, and said plasma generating section is formed in the end portion of said waveguide.
Claim 5
Dependent Claim
33 words
Apparatus as claimed in claim 3 wherein said plasma generating section is formed by separating the end portion of said waveguide by a barrier which is permeable to microwaves and impermeable to gases.
Claim 6
Dependent Claim
40 words
Apparatus as claimed in claim 4 wherein said plasma generating section is composed of a conductive material selected from the group consisting of stainless steel, aluminum and copper, and said barrier is composed of a non-conductive material which is plastic.
Claim 7
Dependent Claim
20 words
Apparatus as claimed in claim 1 wherein said evacuation means is positioned on the outlet side of said reaction chamber.
Claim 8
Dependent Claim
20 words
Apparatus as claimed in claim 1 wherein said evacuation means is positioned on the inlet side of said reaction chamber.
Claim 9
Dependent Claim
19 words
Apparatus as claimed in claim 5, wherein said plastic is selected from the group consisting of polytetrafluoroethylene and glass.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-02-05 | 1982-08-07 | 1983-02-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-02-05 | 1986-08-07 | 1987-02-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-02-05 | 1990-08-07 | 1991-02-06 | $7700.00 | Window Closed / Lapsed |