US3867216A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process and material for manufacturing semiconductor devices
Assignee: Code A Phone Corp
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Filing: 1973-11-16
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Granted: 1975-02-18
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Expires: 1993-11-16
Abstract
Abstract A process step and material for use in the manufacture of semiconductor devices. To facilitate the removal of organic photoresist material from a substrate, the material is exposed to a low pressure rf generated ''''cold'''' plasma (under 325*C) produced from a homogeneous gaseous binary mixture of oxygen and a halocarbon, where the halocarbon is preferably a gas having one carbon atom per molecule and fully fluorine-substituted, and wherein the mixture contains at least 25% of oxygen by volume.
Inventors
- 👤 Adir Jacob
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 19:46
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; C; C23; C23F; C23F4/00; H10P50/28; H10W; H10W74/00; H10W74/40; H10W74/43
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
59 words
A PROCESS FOR REMOVING ORGANIC PHOTORESIST MATERIAL FROM A SUBSTRATE IN A PLASMA ENVIRONMENT, COMPRISING THE STEP OF: EXPOSING THE MATERIAL TO A GASEOUS PLASMA FORMED FORM A BINARY MIXTURE OF OXYGEN AND A HALOCARBON HAVING NO MORE THAN TWO CARBON ATOMS PER MOLECULE, WHEREIN AT LEAST ONE CARBON ATOM IN SAID MOLECULE IS LINKED TO A PREDOMINACE OF
Claim 2
Dependent Claim
59 words
A PROCESS FOR REMOVING ORGANIC PHOTORESIST MATERIAL FROM A SUBSTRATE IN A PLASMA ENVIRONMENT, COMPRISING THE STEP OF: EXPOSING THE MATERIAL TO A GASEOUS PLASMA FORMED FORM A BINARY MIXTURE OF OXYGEN AND A HALOCARBON HAVING NO MORE THAN TWO CARBON ATOMS PER MOLECULE, WHEREIN AT LEAST ONE CARBON ATOM IN SAID MOLECULE IS LINKED TO A PREDOMINACE OF
Claim 3
Dependent Claim
23 words
A process in accordance with claim 1 wherein said halocarbon and said oxygen are supplied to a reactor from a common premixed source.
Claim 4
Dependent Claim
12 words
A process in accordance with claim 1 wherein said halocarbon is trifluoromethane.
Claim 5
Dependent Claim
12 words
A process in accordance with claim 1 wherein said halocarbon is tetrafluoromethane.
Claim 6
Dependent Claim
70 words
A composition of matter useful for stripping organic photoresist material from a substrate in a plasma environment, said composition comprising a binary gaseous mixture of oxygen and a halocargon having no more than two carbon atoms per molecule, wherein at least one carbon atom in said molecule is linked to a predominance of fluorine atoms and wherein said oxygen comprises at least 25% by volume of said binary gaseous mixture.
Claim 7
Dependent Claim
70 words
A composition of matter useful for stripping organic photoresist material from a substrate in a plasma environment, said composition comprising a binary gaseous mixture of oxygen and a halocargon having no more than two carbon atoms per molecule, wherein at least one carbon atom in said molecule is linked to a predominance of fluorine atoms and wherein said oxygen comprises at least 25% by volume of said binary gaseous mixture.
Claim 8
Dependent Claim
14 words
A composition of matter in accordance with claim 5 wherein said halocarbon is trifluoromethane.
Claim 9
Dependent Claim
14 words
A composition of matter in accordance with claim 5 wherein said halocarbon is tetrafluoromethane.
References Cited (Backward Citations)
US3615956A
Cited
US3816196A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-02-17 | 1978-08-19 | 1979-02-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-02-17 | 1982-08-19 | 1983-02-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-02-17 | 1986-08-19 | 1987-02-18 | $7700.00 | Window Closed / Lapsed |