Patent US6599791B1 successfully refreshed from Google Patents.
US6599791B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor integrated circuit
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1999-01-13
•
Granted: 2003-07-29
•
Expires: 2019-01-13
Abstract
Abstract In a monolithic active matrix circuit that uses offset-gate TFTs in which the gate electrode is offset from the source and drain regions or TFTs whose gate insulating film is formed by vapor deposition, not only an active matrix circuit but also a drive circuit therefor is formed by using P-channel TFTs.
Inventors
- 👤 Jun Koyama
- 👤 Yuji Kawasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 07:17
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; H; H10; H10D; H10D86/00; H10D86/40; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/6729; H10D30/6737; H10D30/6739; H10D86/60
Claims Analysis
Total Claims: 53
Claim 1
Independent Claim
201 words
A method of manufacturing a semiconductor device comprising at least one first P-channel thin film transistor for switching a pixel electrode, and a driver circuit including at least two second P-channel thin film transistors for driving said first P-channel thin film transistor, said method comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; forming an insulating film on said semiconductor film; selectively introducing an impurity comprising boron into a selected portion of said semiconductor film through said insulating film by ion doping; removing said insulating film after the introduction of said impurity; crystallizing said semiconductor film after the introduction of said impurity; patterning said semiconductor film into at least one first semiconductor island to form said first P-channel thin film transistor and at least two second semiconductor islands to form said second P-channel thin film transistor, wherein only one of said two second semiconductor islands is included in said portion of the semiconductor film so that a channel region of said only one of the two second thin film transistor is doped with said boron while a channel region of the other one of the two second thin film transistors is not doped with said boron.
Claim 2
Independent Claim
201 words
A method of manufacturing a semiconductor device comprising at least one first P-channel thin film transistor for switching a pixel electrode, and a driver circuit including at least two second P-channel thin film transistors for driving said first P-channel thin film transistor, said method comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; forming an insulating film on said semiconductor film; selectively introducing an impurity comprising boron into a selected portion of said semiconductor film through said insulating film by ion doping; removing said insulating film after the introduction of said impurity; crystallizing said semiconductor film after the introduction of said impurity; patterning said semiconductor film into at least one first semiconductor island to form said first P-channel thin film transistor and at least two second semiconductor islands to form said second P-channel thin film transistor, wherein only one of said two second semiconductor islands is included in said portion of the semiconductor film so that a channel region of said only one of the two second thin film transistor is doped with said boron while a channel region of the other one of the two second thin film transistors is not doped with said boron.
Claim 3
Dependent Claim
17 words
The method according to claim 1 wherein said insulating film has a thickness of 1,000 to 3,000.
Claim 4
Dependent Claim
15 words
The method according to claim 1 wherein said semiconductor device is a liquid crystal device.
Claim 5
Dependent Claim
15 words
The method according to claim 1 wherein the crystallizing step is performed by laser irradiation.
Claim 6
Dependent Claim
23 words
The method according to claim 1 wherein said impurity is introduced at a dose of 1×10 13 to 2×10 14 atoms/cm 2 .
Claim 7
Independent Claim
204 words
A method of manufacturing a semiconductor device comprising at least one first P-channel thin film transistor for switching a pixel electrode, and a driver circuit including at least two second P-channel thin film transistors for driving said first P-channel thin film transistor, said method comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; forming an insulating film on said semiconductor film; selectively introducing an impurity comprising boron into a selected portion of said semiconductor film through said insulating film by ion implantation; removing said insulating film after the introduction of said impurity; crystallizing said semiconductor film after the introduction of said impurity; patterning said semiconductor film into at least one first semiconductor island to form said first P-channel thin film transistor and at least two second semiconductor islands to form said second P-channel thin film transistor, wherein one of said two second semiconductor islands is included in said portion of the semiconductor film so that a channel region of said only one of the two second thin film transistors is doped with said boron while a channel region of the other one of the two second thin film transistor is not doped with said boron during the selective introduction.
Claim 8
Independent Claim
204 words
A method of manufacturing a semiconductor device comprising at least one first P-channel thin film transistor for switching a pixel electrode, and a driver circuit including at least two second P-channel thin film transistors for driving said first P-channel thin film transistor, said method comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; forming an insulating film on said semiconductor film; selectively introducing an impurity comprising boron into a selected portion of said semiconductor film through said insulating film by ion implantation; removing said insulating film after the introduction of said impurity; crystallizing said semiconductor film after the introduction of said impurity; patterning said semiconductor film into at least one first semiconductor island to form said first P-channel thin film transistor and at least two second semiconductor islands to form said second P-channel thin film transistor, wherein one of said two second semiconductor islands is included in said portion of the semiconductor film so that a channel region of said only one of the two second thin film transistors is doped with said boron while a channel region of the other one of the two second thin film transistor is not doped with said boron during the selective introduction.
Claim 9
Dependent Claim
17 words
The method according to claim 6 wherein said insulating film has a thickness of 1,000 to 3,000.
Claim 10
Dependent Claim
15 words
The method according to claim 6 wherein said semiconductor device is a liquid crystal device.
Claim 11
Dependent Claim
15 words
The method according to claim 6 wherein the crystallizing step is performed by laser irradiation.
Claim 12
Dependent Claim
23 words
The method according to claim 6 wherein said impurity is introduced at a dose of 1×10 13 to 2×10 14 atoms/cm 2 .
Claim 13
Independent Claim
188 words
A method of manufacturing a semiconductor device comprising at least one first P-channel thin film transistor for switching a pixel electrode, and a driver circuit including at least two second P-channel thin film transistors for driving said first P-channel thin film transistor, said method comprising: forming a semiconductor film comprising silicon on an insulating surface; forming an insulating film on said semiconductor film; selectively introducing an impurity comprising boron into a selected portion of said semiconductor film through said insulating film; removing said insulating film after the introduction of said impurity; patterning said semiconductor film into at least one first semiconductor island to form said first P-channel thin film transistor and at least two second semiconductor islands to form said second P-channel thin film transistor, wherein one of said two second semiconductor islands is included in said portion of the semiconductor film so that a channel region of said only one of the two second thin film transistors is doped with said boron while a channel region of the other one of the two second thin film transistor is not doped with said boron during the selective introduction.
Claim 14
Independent Claim
188 words
A method of manufacturing a semiconductor device comprising at least one first P-channel thin film transistor for switching a pixel electrode, and a driver circuit including at least two second P-channel thin film transistors for driving said first P-channel thin film transistor, said method comprising: forming a semiconductor film comprising silicon on an insulating surface; forming an insulating film on said semiconductor film; selectively introducing an impurity comprising boron into a selected portion of said semiconductor film through said insulating film; removing said insulating film after the introduction of said impurity; patterning said semiconductor film into at least one first semiconductor island to form said first P-channel thin film transistor and at least two second semiconductor islands to form said second P-channel thin film transistor, wherein one of said two second semiconductor islands is included in said portion of the semiconductor film so that a channel region of said only one of the two second thin film transistors is doped with said boron while a channel region of the other one of the two second thin film transistor is not doped with said boron during the selective introduction.
Claim 15
Dependent Claim
16 words
The method of claim 11 wherein said impurity is introduced by ion doping or ion implantation.
Claim 16
Dependent Claim
17 words
The method according to claim 11 wherein said insulating film has a thickness of 1,000 to 3,000.
Claim 17
Dependent Claim
15 words
The method according to claim 11 wherein said semiconductor device is a liquid crystal device.
Claim 18
Dependent Claim
28 words
The method according to claim 11 wherein at least one of the first P-channel thin film transistor and the two second P-channel thin film transistors has an offset-gate.
Claim 19
Dependent Claim
23 words
The method according to claim 11 wherein said impurity is introduced at a dose of 1×10 13 to 2×10 14 atoms/cm 2 .
Claim 20
Independent Claim
221 words
A method of manufacturing a semiconductor device comprising at least one first P-channel thin film transistor for switching a pixel electrode, and a driver circuit including at least two second P-channel thin film transistors for driving said first P-channel thin film transistor, said method comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface over a substrate; forming an insulating film on said semiconductor film; selectively introducing an impurity comprising boron into a selected portion of said semiconductor film through said insulating film; removing said insulating film after the introduction of said impurity; crystallizing said semiconductor film; patterning said semiconductor film into at least one first semiconductor island to form said first P-channel thin film transistor and at least two second semiconductor islands to form said second P-channel thin film transistor; and mounting at least one of a correction memory chip, a memory chip, a CPU and an input port chip over the substrate, wherein one of said two second semiconductor islands is included in said portion of the semiconductor film so that a channel region of said only one of the two second thin film transistors is doped with said boron while a channel region of the other one of the two second thin film transistor is not doped with said boron during the selective introduction.
Claim 21
Independent Claim
221 words
A method of manufacturing a semiconductor device comprising at least one first P-channel thin film transistor for switching a pixel electrode, and a driver circuit including at least two second P-channel thin film transistors for driving said first P-channel thin film transistor, said method comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface over a substrate; forming an insulating film on said semiconductor film; selectively introducing an impurity comprising boron into a selected portion of said semiconductor film through said insulating film; removing said insulating film after the introduction of said impurity; crystallizing said semiconductor film; patterning said semiconductor film into at least one first semiconductor island to form said first P-channel thin film transistor and at least two second semiconductor islands to form said second P-channel thin film transistor; and mounting at least one of a correction memory chip, a memory chip, a CPU and an input port chip over the substrate, wherein one of said two second semiconductor islands is included in said portion of the semiconductor film so that a channel region of said only one of the two second thin film transistors is doped with said boron while a channel region of the other one of the two second thin film transistor is not doped with said boron during the selective introduction.
Claim 22
Dependent Claim
18 words
The method according to claim 17 wherein said semiconductor film is crystallized after the introduction of the impurity.
Claim 23
Dependent Claim
16 words
The method of claim 17 wherein said impurity is introduced by ion doping or ion implantation.
Claim 24
Dependent Claim
17 words
The method according to claim 17 wherein said insulating film has a thickness of 1,000 to 3,000.
Claim 25
Dependent Claim
15 words
The method according to claim 17 wherein said semiconductor device is a liquid crystal device.
Claim 26
Dependent Claim
15 words
The method according to claim 17 wherein the crystallizing step is performed by laser irradiation.
Claim 27
Dependent Claim
23 words
The method according to claim 17 wherein said impurity is introduced at a dose of 1×10 13 to 2×10 14 atoms/cm 2 .
Claim 28
Independent Claim
217 words
A method of manufacturing a semiconductor device comprising at least one first P-channel thin film transistor for switching a pixel electrode, and a driver circuit including at least two second P-channel thin film transistors for driving said first P-channel thin film transistor, said method comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface over a substrate; forming an insulating film on said semiconductor film; selectively introducing an impurity comprising boron into a selected portion of said semiconductor film through said insulating film; removing said insulating film after the introduction of said impurity; patterning said semiconductor film into at least one first semiconductor island to form said first P-channel thin film transistor and at least two second semiconductor islands to form said second P-channel thin film transistor; and mounting at least one of a correction memory chip, a memory chip, a CPU and an input port chip over the substrate, wherein one of said two second semiconductor islands is included in said portion of the semiconductor film so that a channel region of said only one of the two second thin film transistors is doped with said boron while a channel region of the other one of the two second thin film transistor is not doped with said boron during the selective introduction.
Claim 29
Independent Claim
217 words
A method of manufacturing a semiconductor device comprising at least one first P-channel thin film transistor for switching a pixel electrode, and a driver circuit including at least two second P-channel thin film transistors for driving said first P-channel thin film transistor, said method comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface over a substrate; forming an insulating film on said semiconductor film; selectively introducing an impurity comprising boron into a selected portion of said semiconductor film through said insulating film; removing said insulating film after the introduction of said impurity; patterning said semiconductor film into at least one first semiconductor island to form said first P-channel thin film transistor and at least two second semiconductor islands to form said second P-channel thin film transistor; and mounting at least one of a correction memory chip, a memory chip, a CPU and an input port chip over the substrate, wherein one of said two second semiconductor islands is included in said portion of the semiconductor film so that a channel region of said only one of the two second thin film transistors is doped with said boron while a channel region of the other one of the two second thin film transistor is not doped with said boron during the selective introduction.
Claim 30
Dependent Claim
16 words
The method of claim 24 wherein said impurity is introduced by ion doping or ion implantation.
Claim 31
Dependent Claim
17 words
The method according to claim 24 wherein said insulating film has a thickness of 1,000 to 3,000.
Claim 32
Dependent Claim
15 words
The method according to claim 24 wherein said semiconductor device is a liquid crystal device.
Claim 33
Dependent Claim
28 words
The method according to claim 24 wherein at least one of the first P-channel thin film transistor and the two second P-channel thin film transistors has an offset-gate.
Claim 34
Dependent Claim
23 words
The method according to claim 24 wherein said impurity is introduced at a dose of 1×10 13 to 2×10 14 atoms/cm 2 .
Claim 35
Independent Claim
266 words
A method of manufacturing a semiconductor device comprising at least one first P-channel thin film transistor for switching a pixel electrode, and a driver circuit including at least two second P-channel thin film transistors for driving said first P-channel thin film transistor, said method comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; forming an insulating film on said semiconductor film; selectively introducing an impurity comprising boron into a selected portion of said semiconductor film through said insulating film; removing said insulating film after the introduction of said impurity; crystallizing said semiconductor film; patterning said semiconductor film into at least one first semiconductor island to form said first P-channel thin film transistor and at least two second semiconductor islands to form said second P-channel thin film transistors; forming a gate insulating film over said at least one first semiconductor island, and said at least two second semiconductor islands; forming a gate electrode over each of the at least one first semiconductor island and the at least two second semiconductor islands; forming p-type regions in the at least one first semiconductor island and the at least two semiconductor islands by introducing boron with the gate electrodes as a mask, wherein one of said two second semiconductor islands is included in said portion of the semiconductor film so that a channel region of said only one of the two second thin film transistors is doped with said boron while a channel region of the other one of the two second thin film transistors is not doped with said boron during the selective introduction.
Claim 36
Independent Claim
266 words
A method of manufacturing a semiconductor device comprising at least one first P-channel thin film transistor for switching a pixel electrode, and a driver circuit including at least two second P-channel thin film transistors for driving said first P-channel thin film transistor, said method comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; forming an insulating film on said semiconductor film; selectively introducing an impurity comprising boron into a selected portion of said semiconductor film through said insulating film; removing said insulating film after the introduction of said impurity; crystallizing said semiconductor film; patterning said semiconductor film into at least one first semiconductor island to form said first P-channel thin film transistor and at least two second semiconductor islands to form said second P-channel thin film transistors; forming a gate insulating film over said at least one first semiconductor island, and said at least two second semiconductor islands; forming a gate electrode over each of the at least one first semiconductor island and the at least two second semiconductor islands; forming p-type regions in the at least one first semiconductor island and the at least two semiconductor islands by introducing boron with the gate electrodes as a mask, wherein one of said two second semiconductor islands is included in said portion of the semiconductor film so that a channel region of said only one of the two second thin film transistors is doped with said boron while a channel region of the other one of the two second thin film transistors is not doped with said boron during the selective introduction.
Claim 37
Dependent Claim
28 words
The method according to claim 30 wherein at least one of the first P-channel thin film transistor and the two second P-channel thin film transistors has an offset-gate.
Claim 38
Dependent Claim
18 words
The method according to claim 30 wherein said semiconductor film is crystallized after the introduction of the impurity.
Claim 39
Dependent Claim
16 words
The method of claim 30 wherein said impurity is introduced by ion doping or ion implantation.
Claim 40
Dependent Claim
17 words
The method according to claim 30 wherein said insulating film has a thickness of 1,000 to 3,000.
Claim 41
Dependent Claim
15 words
The method according to claim 30 wherein said semiconductor device is a liquid crystal device.
Claim 42
Dependent Claim
15 words
The method according to claim 30 wherein the crystallizing step is performed by laser irradiation.
Claim 43
Dependent Claim
23 words
The method according to claim 30 wherein said impurity is introduced at a dose of 1×10 13 to 2×10 14 atoms/cm 2 .
Claim 44
Independent Claim
265 words
A method of manufacturing a semiconductor device comprising at least one first P-channel thin film transistor for switching a pixel electrode, and a driver circuit including at least two second P-channel thin film transistors for driving said first P-channel thin film transistor, said method comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface over a substrate; forming an insulating film on said semiconductor film; selectively introducing an impurity comprising boron into a selected portion of said semiconductor film through said insulating film; removing said insulating film after the introduction of said impurity; patterning said semiconductor film into at least one first semiconductor island to form said first P-channel thin film transistor and at least two second semiconductor islands to form said second P-channel thin film transistors; forming a gate insulating film over said at least one first semiconductor island, and said at least two second semiconductor islands; forming a gate electrode over each of the at least one first semiconductor island and the at least two second semiconductor islands; forming p-type regions in the at least one first semiconductor island and the at least two semiconductor islands by introducing boron with the gate electrodes as a mask, wherein one of said two second semiconductor islands is included in said portion of the semiconductor film so that a channel region of said only one of the two second thin film transistors is doped with said boron while a channel region of the other one of the two second thin film transistors is not doped with said boron during the selective introduction.
Claim 45
Independent Claim
265 words
A method of manufacturing a semiconductor device comprising at least one first P-channel thin film transistor for switching a pixel electrode, and a driver circuit including at least two second P-channel thin film transistors for driving said first P-channel thin film transistor, said method comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface over a substrate; forming an insulating film on said semiconductor film; selectively introducing an impurity comprising boron into a selected portion of said semiconductor film through said insulating film; removing said insulating film after the introduction of said impurity; patterning said semiconductor film into at least one first semiconductor island to form said first P-channel thin film transistor and at least two second semiconductor islands to form said second P-channel thin film transistors; forming a gate insulating film over said at least one first semiconductor island, and said at least two second semiconductor islands; forming a gate electrode over each of the at least one first semiconductor island and the at least two second semiconductor islands; forming p-type regions in the at least one first semiconductor island and the at least two semiconductor islands by introducing boron with the gate electrodes as a mask, wherein one of said two second semiconductor islands is included in said portion of the semiconductor film so that a channel region of said only one of the two second thin film transistors is doped with said boron while a channel region of the other one of the two second thin film transistors is not doped with said boron during the selective introduction.
Claim 46
Dependent Claim
28 words
The method according to claim 38 wherein at least one of the first P-channel thin film transistor and the two second P-channel thin film transistors has an offset-gate.
Claim 47
Dependent Claim
16 words
The method of claim 38 wherein said impurity is introduced by ion doping or ion implantation.
Claim 48
Dependent Claim
17 words
The method according to claim 38 wherein said insulating film has a thickness of 1,000 to 3,000.
Claim 49
Dependent Claim
15 words
The method according to claim 38 wherein said semiconductor device is a liquid crystal device.
Claim 50
Dependent Claim
28 words
The method according to claim 6 wherein at least one of the first P-channel thin film transistor and the two second P-channel thin film transistors has an offset-gate.
Claim 51
Dependent Claim
23 words
The method according to claim 38 wherein said impurity is introduced at a dose of 1×10 13 to 2×10 14 atoms/cm 2 .
Claim 52
Dependent Claim
28 words
The method according to claim 1 wherein at least one of the first P-channel thin film transistor and the two second P-channel thin film transistors has an offset-gate.
Claim 53
Dependent Claim
28 words
The method according to claim 17 wherein at least one of the first P-channel thin film transistor and the two second P-channel thin film transistors has an offset-gate.
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